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Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

IEEE electron device letters, 2012-11, Vol.33 (11), p.1535-1537

2012

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Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Microelectronic engineering, 2009-07, Vol.86 (7), p.1646-1649

2009

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Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

Solid-state electronics, 2012-08, Vol.74, p.97-101

2012

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20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain

Solid-state electronics, 2012-05, Vol.71, p.88-92

2012

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Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI

IEEE electron device letters, 2012-06, Vol.33 (6), p.758-760

2012

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High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Solid-state electronics, 2011-08, Vol.62 (1), p.185-188

2011

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Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

Solid-state electronics, 2012-05, Vol.71, p.42-47

2012

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Structural and Electrical Properties of Lanthanum Gadolinium Oxide: Ceramic and Thin Films for High-k Application

Integrated ferroelectrics, 2011-01, Vol.125 (1), p.44-52

2011

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LaScO3 as a higher-κ dielectric for p-MOSFETs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1323-1325

2011

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LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process

Solid-state electronics, 2012-05, Vol.71, p.19-24

2012

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Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

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Electrical properties and thermal stability of MOCVD grown Ru gate electrodes for advanced CMOS technology

Microelectronic engineering, 2006-11, Vol.83 (11), p.2412-2416

2006

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Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.1065-1072

2006

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Structural properties of Y2O3 thin films grown on Si(100) and Si(111) substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-01, Vol.116 (1), p.30-33

2005

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Application of Ru-based gate materials for CMOS technology

Materials science in semiconductor processing, 2004, Vol.7 (4), p.271-276

2004

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Growth of gadolinium oxide films for advanced MOS structure

Microelectronic engineering, 2005-06, Vol.80, p.154-157

2005

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High mobility Si-Ge channels and novel high-k materials for nanomosfets

CAS 2010 Proceedings (International Semiconductor Conference), 2010, Vol.1, p.57-62

2010

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Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD

Vacuum, 2009-08, Vol.84 (1), p.170-173

2009

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Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1)

2011

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20nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain

Solid-state electronics, 2012-05, Vol.71, p.88-92

2012

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Four weevil species new to the fauna of Hungary from motorway rest areas (Coleoptera: Curculionidae)

Folia entomologica Hungarica, 2014, Vol.75, p.73-78

2014

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Hole Mobilities of \hbox\hbox Quantum-Well Transistor on SOI and Strained SOI

IEEE electron device letters, 2012-06, Vol.33 (6), p.758-760

2012

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Hole Mobilities of hbox Si / Si 0.5 hbox Ge 0.5 Quantum-Well Transistor on SOI and Strained SOI

IEEE electron device letters, 2012-06, Vol.33 (6), p.758-760

2012

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Hole Mobilities of [Formula Omitted] Quantum-Well Transistor on SOI and Strained SOI

IEEE electron device letters, 2012-06, Vol.33 (6), p.758

2012

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Thermal stability of GdScO sub(3 and LaLuO) sub(3) films prepared by liquid injection MOCVD

Vacuum, 2009-08, Vol.84 (1), p.170-173

2009

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Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain

Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

Structural and Electrical Properties of Lanthanum Gadolinium Oxide: Ceramic and Thin Films for High-k Application

LaScO3 as a higher-κ dielectric for p-MOSFETs

LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process

Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Electrical properties and thermal stability of MOCVD grown Ru gate electrodes for advanced CMOS technology

Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition

Structural properties of Y2O3 thin films grown on Si(100) and Si(111) substrates

Application of Ru-based gate materials for CMOS technology

Growth of gadolinium oxide films for advanced MOS structure

High mobility Si-Ge channels and novel high-k materials for nanomosfets

Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD

Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

20nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain

Four weevil species new to the fauna of Hungary from motorway rest areas (Coleoptera: Curculionidae)

Hole Mobilities of \hbox\hbox Quantum-Well Transistor on SOI and Strained SOI

Hole Mobilities of hbox Si / Si 0.5 hbox Ge 0.5 Quantum-Well Transistor on SOI and Strained SOI

Hole Mobilities of [Formula Omitted] Quantum-Well Transistor on SOI and Strained SOI

Thermal stability of GdScO sub(3 and LaLuO) sub(3) films prepared by liquid injection MOCVD

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