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Characterization of homoepitaxial p -type ZnO grown by molecular beam epitaxy

Applied physics letters, 2002-09, Vol.81 (10), p.1830-1832

2002

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Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO

Applied physics letters, 2005-07, Vol.87 (1), p.012102-012102-3

2005

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Electrical properties of bulk ZnO

Solid state communications, 1998-02, Vol.105 (6), p.399-401

1998

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Exciton–polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO

Semiconductor science and technology, 2005-04, Vol.20 (4), p.S67-S77

2005

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Polarized photoreflectance spectra of excitonic polaritons in a ZnO single crystal

Journal of applied physics, 2003-01, Vol.93 (1), p.756-758

2003

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Brillouin scattering study of ZnO

Journal of applied physics, 2003-07, Vol.94 (2), p.968-972

2003

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Valence-band ordering in ZnO

Physical review. B, Condensed matter, 1999-07, Vol.60 (4), p.2340-2344

1999

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Neutral-donor–bound-exciton complexes in ZnO crystals

Physical review. B, Condensed matter, 1998-05, Vol.57 (19), p.12151-12155

1998

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Strong biexcitonic effects and exciton-exciton correlations in ZnO

Physical review. B, Condensed matter, 2003-07, Vol.68 (3), Article 033205

2003

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Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

Applied physics letters, 1997-01, Vol.70 (4), p.467-469

1997

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Impact of the k -linear term on nonlinear optical response of the C-exciton manifold in ZnO

Journal of applied physics, 2004-05, Vol.95 (10), p.5498-5501

2004

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Optical properties of ZnO crystals containing internal strains

Journal of luminescence, 1999-08, Vol.82 (2), p.173-176

1999

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High-quality, melt-grown ZnO single crystals

Journal of applied physics, 2004-05, Vol.95 (9), p.4802-4805

2004

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Growth of InSb and InAs1-xSbx on GaAs by molecular beam epitaxy

Applied physics letters, 1988-09, Vol.53 (12), p.1092-1094

1988

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Effect of C ∕ Si ratio on deep levels in epitaxial 4H-SiC

Applied physics letters, 2006-03, Vol.88 (12), p.121914-121914-3

2006

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Wavefunction Engineering for GaN-Based Quantum Wells and Superlattices

Physics of Semiconductors; Part B, 2005, Vol.772, p.941-942

2005

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Determination of defect pair orientation in ZnO

Solid state communications, 1999-01, Vol.109 (6), p.419-422

1999

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Observation of donor-acceptor pair spectra in the photoluminescence of H- and Zn-implanted ZnO single crystals

Applied physics letters, 2006-04, Vol.88 (14)

2006

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Effects of Rapid Thermal Annealing Treatment on the Surface Band Bending of n-type GaN Studied by Surface Potential Electric Force Microscopy

Materials science forum, 2006-10, Vol.527-529, p.1529-1532

2006

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High Power Photoconductive Switch of 4H-SiC with Damage-Free Electrodes by Using n+-GaN Subcontact Layer

Materials science forum, 2006-10, Vol.527-529, p.1387-1390

2006

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Phonon scattering of excitons and biexcitons in ZnO

Journal of applied physics, 2004-07, Vol.96 (2), p.1270-1272

2004

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Hybrid II-VI and III-V Compound Double Heterostructures and Their Properties

Journal of electronic materials, 2007-04, Vol.36 (4), p.409-413

2007

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Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates

Applied physics letters, 1988-08, Vol.53 (7), p.562-564

1988

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Temperature dependence of 2DEG and excitonic optical transitions in AlGaN/GaN heterostructures on SiC

Physica status solidi. C, 2005-05, Vol.2 (7), p.2736-2739

2005

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Temperature dependence of free excitons in GaN

Journal of applied physics, 2002-11, Vol.92 (9), p.5596-5598

2002

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Characterization of homoepitaxial p -type ZnO grown by molecular beam epitaxy

Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO

Electrical properties of bulk ZnO

Exciton–polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO

Polarized photoreflectance spectra of excitonic polaritons in a ZnO single crystal

Brillouin scattering study of ZnO

Valence-band ordering in ZnO

Neutral-donor–bound-exciton complexes in ZnO crystals

Strong biexcitonic effects and exciton-exciton correlations in ZnO

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

Impact of the k -linear term on nonlinear optical response of the C-exciton manifold in ZnO

Optical properties of ZnO crystals containing internal strains

High-quality, melt-grown ZnO single crystals

Growth of InSb and InAs1-xSbx on GaAs by molecular beam epitaxy

Effect of C ∕ Si ratio on deep levels in epitaxial 4H-SiC

Wavefunction Engineering for GaN-Based Quantum Wells and Superlattices

Determination of defect pair orientation in ZnO

Observation of donor-acceptor pair spectra in the photoluminescence of H- and Zn-implanted ZnO single crystals

Effects of Rapid Thermal Annealing Treatment on the Surface Band Bending of n-type GaN Studied by Surface Potential Electric Force Microscopy

High Power Photoconductive Switch of 4H-SiC with Damage-Free Electrodes by Using n+-GaN Subcontact Layer

Phonon scattering of excitons and biexcitons in ZnO

Hybrid II-VI and III-V Compound Double Heterostructures and Their Properties

Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates

Temperature dependence of 2DEG and excitonic optical transitions in AlGaN/GaN heterostructures on SiC

Temperature dependence of free excitons in GaN

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