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The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?

Applied physics letters, 2011-05, Vol.98 (18)

2011

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Electrically active radiation-induced defects in Czochralski-grown Si with low carbon content

Journal of physics. Condensed matter, 2005-06, Vol.17 (22), p.S2331-S2340

2005

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Local vibrational modes of the oxygen trimer in Si

Physica status solidi. C, 2011-03, Vol.8 (3), p.709-712

2011

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Determination of interstitial oxygen concentration in germanium by infrared absorption

Journal of applied physics, 2006-08, Vol.100 (3)

2006

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The VO2 defect in silicon

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.509-513

2003

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Defect engineering in Czochralski silicon by electron irradiation at different temperatures

E-MRS 2001 Spring Meeting Symposium B Defect Engineering of Advanced Semiconductor Devices,Strasbourg, France,2001-06-04 - 2001-06-08, 2002, Vol.186 (1), p.121-125

2002

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Defect reactions associated with divacancy elimination in silicon

Journal of physics. Condensed matter, 2003-10, Vol.15 (39), p.S2779-S2789

2003

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Deep level defects in electron-irradiated 4H SiC epitaxial layers

Journal of applied physics, 1997-05, Vol.81 (9), p.6155-6159

1997

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Characterization of oxygen dimer-enriched silicon detectors

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2005, Vol.552 (1), p.49-55

2005

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Evolution of radiation-induced carbon–oxygen-related defects in silicon upon annealing: LVM studies

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-12, Vol.253 (1-2), p.210-213

2006

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Thermal double donors and quantum dots

Physical review letters, 2001-12, Vol.87 (23), p.235501-235501, Article 235501

2001

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Oxygen loss and thermal double donor formation in germanium

Materials science in semiconductor processing, 2006-08, Vol.9 (4), p.619-624

2006

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Effect of high hydrostatic pressure on small oxygen-related clusters in silicon: LVM studies

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.565-569

2003

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Vacancy–oxygen complex in Ge crystals

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.844-848

2003

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Spectroscopic observation of the TDD0 in silicon

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.1046-1050

2003

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Hydrogen-plasma-enhanced oxygen precipitation in silicon

Journal of physics. Condensed matter, 2000-12, Vol.12 (49), p.10145-10152

2000

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Electronic structure of the neutral silicon vacancy in 4H and 6H SiC

Physical review. B, 2000-12, Vol.62 (24), p.16555

2000

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Trivacancy-oxygen complex in silicon: Local vibrational mode characterization

25th International Conference on Defects in Semiconductors,St Petersburg, Russian Federation,2009-07-20 - 2009-07-24, 2009-12, Vol.404 (23-24), p.4568-4571

2009

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