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Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.316-323

2015

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AC-Stress Degradation and Its Anneal in SiC MOSFETs

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.5068-5073

2022

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Comparison of Test Methods for Proper Characterization of VT in SiC MOSFETs

Materials science forum, 2016-05, Vol.858, p.833-839

2016

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Effect of Dynamic Threshold-Voltage Instability on Dynamic ON-State Resistance in SiC MOSFETs

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5649-5655, Article 5649

2022

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Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Short-Circuit Robustness of SiC Trench MOSFETs

Materials science forum, 2018-06, Vol.924, p.715-718

2018

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Evaluation of PBTS and NBTS in SiC MOS Using In Situ Charge Pumping Measurements

Materials science forum, 2013-01, Vol.740-742, p.545-548

2013

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Role of Oxygen Vacancies in Short- and Long-Term Instability of Negative Bias-Temperature Stressed SiC MOSFETs

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1007-1014

2017

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Effects of Pulsed and DC Body-Diode Current Stress on the Stability of 1200-V SiC MOSFET I-V Characteristics

Materials science forum, 2020-07, Vol.1004, p.1027-1032

2020

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Relationship Between the 4H-SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.301-308

2015

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Feasibility of SiC threshold voltage drift characterization for reliability assessment in production environments

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1, Article 509

2017

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Influences of Bias Interruption and Reapplication on High-Temperature Threshold-Voltage Shifts of SiC DMOSFETs

Materials science forum, 2018-06, Vol.924, p.743-747, Article 743

2018

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Short-circuit robustness testing of SiC MOSFETs

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied With Electrically Detected Magnetic Resonance

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.197-203

2017

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Analysis of the electronic and chemical structure in boron and phosphorus passivated 4H-SiC/SiO2 interfaces using HRTEM and STEM-EELS

Applied physics letters, 2018-11, Vol.113 (19)

2018

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The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping

Materials science forum, 2018-06, Vol.924, p.469-472

2018

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Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs

Materials Science Forum, 2016-05, Vol.858, p.461-464

2016

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Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs

Materials science forum, 2012-05, Vol.717-720, p.465-468

2012

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High-Temperature Reliability of SiC Power MOSFETs

Materials science forum, 2011-03, Vol.679-680, p.599-602, Article 599

2011

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Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast I- V Techniques

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2004-2012

2008

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Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-4

2020

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Threshold-Voltage Instability in SiC MOSFETs Due to Near-Interfacial Oxide Traps

Materials Science Forum, 2016-05, Vol.858, p.585-590

2016

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Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors

Journal of applied physics, 2013-01, Vol.113 (4)

2013

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Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements

Materials science forum, 2015-06, Vol.821-823, p.697-700

2015

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Bias-Temperature-Stress Response of Commercially-Available SiC Power MOSFETs

Materials science forum, 2015-06, Vol.821-823, p.677-680

2015

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Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

AC-Stress Degradation and Its Anneal in SiC MOSFETs

Comparison of Test Methods for Proper Characterization of VT in SiC MOSFETs

Effect of Dynamic Threshold-Voltage Instability on Dynamic ON-State Resistance in SiC MOSFETs

Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor

Short-Circuit Robustness of SiC Trench MOSFETs

Evaluation of PBTS and NBTS in SiC MOS Using In Situ Charge Pumping Measurements

Role of Oxygen Vacancies in Short- and Long-Term Instability of Negative Bias-Temperature Stressed SiC MOSFETs

Effects of Pulsed and DC Body-Diode Current Stress on the Stability of 1200-V SiC MOSFET I-V Characteristics

Relationship Between the 4H-SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance

Feasibility of SiC threshold voltage drift characterization for reliability assessment in production environments

Influences of Bias Interruption and Reapplication on High-Temperature Threshold-Voltage Shifts of SiC DMOSFETs

Short-circuit robustness testing of SiC MOSFETs

Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied With Electrically Detected Magnetic Resonance

Analysis of the electronic and chemical structure in boron and phosphorus passivated 4H-SiC/SiO2 interfaces using HRTEM and STEM-EELS

The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping

Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs

Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs

High-Temperature Reliability of SiC Power MOSFETs

Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast I- V Techniques

Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification

Threshold-Voltage Instability in SiC MOSFETs Due to Near-Interfacial Oxide Traps

Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors

Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements

Bias-Temperature-Stress Response of Commercially-Available SiC Power MOSFETs

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