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Stress evolution in thick GaN layers grown by HVPE

Journal of crystal growth, 2020-11, Vol.550, p.125887, Article 125887

2020

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Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN

Journal of crystal growth, 2015-10, Vol.427, p.99-103

2015

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Deformation and fracture in (0001) and (10-10) GaN single crystals

Materials science and technology, 2018-09, Vol.34 (13), p.1531-1538

2018

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Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN

Journal of crystal growth, 2012-02, Vol.340 (1), p.78-82

2012

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Origin of orange color in nominally undoped HVPE GaN crystals

Optical materials, 2017-08, Vol.70, p.127-130

2017

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Electron effective mass and phonon modes in GaAs incorporating boron and indium

Applied physics letters, 2007-04, Vol.90 (18), p.182110-182110-3

2007

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MOVPE growth of BxGa1-xAs, BxGa1-x-yInyAs, and BxAl1-xAs alloys on (0 0 1) GaAs

Journal of crystal growth, 2003-02, Vol.248, p.468-473

2003

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Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers

Journal of crystal growth, 2004-12, Vol.272 (1), p.732-738

2004

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Band-gap energies, free carrier effects, and phonon modes in strained GaNAs/GaAs and GaNAs/InAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry

Journal of applied physics, 2001-01, Vol.89 (1), p.294-305

2001

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Optical functions, phonon properties, and composition of InGaAsN single layers derived from far- and near-infrared spectroscopic ellipsometry

Journal of applied physics, 2001-12, Vol.90 (12), p.5951-5958

2001

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Cracks and dislocations at Vickers, Berkovich and cube corner indentations in (0001) GaN single crystals

Physica status solidi. C, 2013-01, Vol.10 (1), p.76-79

2013

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Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultraviolet wavelengths

Journal of applied physics, 2001-05, Vol.89 (9), p.4927-4938

2001

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MOVPE growth of GaAs on Ge substrates by inserting a thin low temperature buffer layer

Crystal research and technology (1979), 2006-02, Vol.41 (2), p.111-116

2006

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Isotropic dielectric functions of highly disordered AlxGa1−xInP (0⩽x⩽1) lattice matched to GaAs

Journal of applied physics, 1999-08, Vol.86 (4), p.2025-2033

1999

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Enhanced weak Anderson localization phenomena in the magnetoresistance of n -type (Ga,In)(N,As)

Applied physics letters, 2004-02, Vol.84 (5), p.747-749

2004

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Phonon modes of GaNyP1−y (0.006⩽y⩽0.0285) measured by midinfrared spectroscopic ellipsometry

Applied physics letters, 2001-11, Vol.79 (21), p.3407-3409

2001

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Raman spectroscopic characterization of epitaxially grown GaN on sapphire

Journal of physics. D, Applied physics, 2013-07, Vol.46 (28), p.285302-1-7

2013

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Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry

Applied physics letters, 2000-05, Vol.76 (20), p.2859-2861

2000

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Intrinsic carbon doping of (AlGa)As for (InGa)As laser structures (λ≈1.17 μm)

Journal of crystal growth, 2004-12, Vol.272 (1), p.642-649

2004

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Hydrogen implantation in InGaNAs studied by spectroscopic ellipsometry

Thin solid films, 2004-05, Vol.455, p.231-234

2004

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X-Ray Investigations of the intrinsic Carbon-Incorporation during the MOVPE Growth of AlxGa1-xAs

Zeitschrift für anorganische und allgemeine Chemie (1950), 2004-08, Vol.630 (10), p.1419-1422

2004

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Scanning Force Microscopy and Geometric Analysis of Two-Dimensional Collagen Network Formation

Surface and interface analysis, 1997-06, Vol.25 (7-8), p.514-521

1997

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Phonon Modes of InxGa1-xAs1-yNy Measured by Far Infrared Spectroscopic Ellipsometry

Physica status solidi. B. Basic research, 2001-11, Vol.228 (1), p.259-262

2001

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The inertial-mass scale for free-charge-carriers in semiconductor heterostructures

Physics of Semiconductors; Part A, 2005, Vol.772, p.455-456

2005

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Phonon Modes and Critical Points of GaPN

Physica status solidi. B. Basic research, 2001-11, Vol.228 (1), p.279-282

2001

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Stress evolution in thick GaN layers grown by HVPE

Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN

Deformation and fracture in (0001) and (10-10) GaN single crystals

Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN

Origin of orange color in nominally undoped HVPE GaN crystals

Electron effective mass and phonon modes in GaAs incorporating boron and indium

MOVPE growth of BxGa1-xAs, BxGa1-x-yInyAs, and BxAl1-xAs alloys on (0 0 1) GaAs

Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers

Band-gap energies, free carrier effects, and phonon modes in strained GaNAs/GaAs and GaNAs/InAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry

Optical functions, phonon properties, and composition of InGaAsN single layers derived from far- and near-infrared spectroscopic ellipsometry

Cracks and dislocations at Vickers, Berkovich and cube corner indentations in (0001) GaN single crystals

Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultraviolet wavelengths

MOVPE growth of GaAs on Ge substrates by inserting a thin low temperature buffer layer

Isotropic dielectric functions of highly disordered AlxGa1−xInP (0⩽x⩽1) lattice matched to GaAs

Enhanced weak Anderson localization phenomena in the magnetoresistance of n -type (Ga,In)(N,As)

Phonon modes of GaNyP1−y (0.006⩽y⩽0.0285) measured by midinfrared spectroscopic ellipsometry

Raman spectroscopic characterization of epitaxially grown GaN on sapphire

Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry

Intrinsic carbon doping of (AlGa)As for (InGa)As laser structures (λ≈1.17 μm)

Hydrogen implantation in InGaNAs studied by spectroscopic ellipsometry

X-Ray Investigations of the intrinsic Carbon-Incorporation during the MOVPE Growth of AlxGa1-xAs

Scanning Force Microscopy and Geometric Analysis of Two-Dimensional Collagen Network Formation

Phonon Modes of InxGa1-xAs1-yNy Measured by Far Infrared Spectroscopic Ellipsometry

The inertial-mass scale for free-charge-carriers in semiconductor heterostructures

Phonon Modes and Critical Points of GaPN

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