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Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage

IEEE transactions on electron devices, 2011-03, Vol.58 (3), p.584-592

2011

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Integration of Nanoelectromechanical Relays With Silicon nMOS

IEEE transactions on electron devices, 2012-01, Vol.59 (1), p.255-258

2012

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Fabrication and Characterization of Nanoscale NiO Resistance Change Memory (RRAM) Cells With Confined Conduction Paths

IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3270-3275

2011

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hbox\hbox-Based RRAM Using Atomic Layer Deposition (ALD) With 1- \mu\hbox RESET Current

IEEE electron device letters, 2010-12, Vol.31 (12), p.1449-1451

2010

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NiO resistance change memory with a novel structure for 3D integration and improved confinement of conduction path

2009 Symposium on VLSI Technology, 2009, p.28-29

2009

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Low-power TiN/Al2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation

Journal of applied physics, 2011-11, Vol.110 (9)

2011

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Metal-Oxide RRAM

Proceedings of the IEEE, 2012-06, Vol.100 (6), p.1951-1970

2012

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Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

Nano letters, 2012-05, Vol.12 (5), p.2179-2186

2012

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Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2), p.02BD06-02BD06-5

2012

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Al2O3-Based RRAM Using Atomic Layer Deposition (ALD) With 1-μA RESET Current

IEEE electron device letters, 2010-12, Vol.31 (12), p.1449-1451

2010

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Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2S), p.2

2012

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Thermal disturbance and its impact on reliability of phase-change memory studied by the micro-thermal stage

2010 IEEE International Reliability Physics Symposium, 2010, p.99-103

2010

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hbox Al 2 hbox O 3 -Based RRAM Using Atomic Layer Deposition (ALD) With 1- mu hbox A RESET Current

IEEE electron device letters, 2010-12, Vol.31 (12), p.1449-1451

2010

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Low-power TiN/Al 2 O 3 /Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation

Journal of applied physics, 2011-11, Vol.110 (9), p.094104-094104-5

2011

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Fabrication and characterization of emerging nanoscale memory

2009 IEEE International Symposium on Circuits and Systems (ISCAS), 2009, p.65-68

2009

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[Formula Omitted]-Based RRAM Using Atomic Layer Deposition (ALD) With 1-[Formula Omitted] RESET Current

IEEE electron device letters, 2010-12, Vol.31 (12), p.1449

2010

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Ultra-low power Al2O3-based RRAM with 1μA reset current

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010, p.136-137

2010

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Highly Manufacturable 7th Generation 3D NAND Flash Memory with COP structure and Double Stack Process

2021 Symposium on VLSI Technology, 2021, p.1-2

2021

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Crystallization properties and their drift dependence in phase-change memory studied with a micro-thermal stage

Journal of applied physics, 2011-12, Vol.110 (11), p.114520-114520-6

2011

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Integration of nanoelectromechanical (NEM) relays with silicon CMOS with functional CMOS-NEM circuit

2011 International Electron Devices Meeting, 2011, p.30.5.1-30.5.4

2011

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Fabrication and Characterization of Nanoscale Resistance Change Memory

Lee, Byoungil

2012

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Metal―Oxide RRAM: Memristors: Devices, Models & Applications

Proceedings of the IEEE, 2012, Vol.100 (6), p.1951-1970

2012

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Efficiency Calibration of Bed Type Whole Body Counter Using Monte Carlo Simulations and Application to Intake Estimation of 131I

Progress in Nuclear Science and Technology, 2011-02, Vol.1, p.549-551

2011

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Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM)

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010, p.1055-1060

2010

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Process Improvements for 7th Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production

2023 IEEE International Memory Workshop (IMW), 2023, p.1-4

2023

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Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage

Integration of Nanoelectromechanical Relays With Silicon nMOS

Fabrication and Characterization of Nanoscale NiO Resistance Change Memory (RRAM) Cells With Confined Conduction Paths

hbox\hbox-Based RRAM Using Atomic Layer Deposition (ALD) With 1- \mu\hbox RESET Current

NiO resistance change memory with a novel structure for 3D integration and improved confinement of conduction path

Low-power TiN/Al2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation

Metal-Oxide RRAM

Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory

Al2O3-Based RRAM Using Atomic Layer Deposition (ALD) With 1-μA RESET Current

Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory

Thermal disturbance and its impact on reliability of phase-change memory studied by the micro-thermal stage

hbox Al 2 hbox O 3 -Based RRAM Using Atomic Layer Deposition (ALD) With 1- mu hbox A RESET Current

Low-power TiN/Al 2 O 3 /Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation

Fabrication and characterization of emerging nanoscale memory

[Formula Omitted]-Based RRAM Using Atomic Layer Deposition (ALD) With 1-[Formula Omitted] RESET Current

Ultra-low power Al2O3-based RRAM with 1μA reset current

Highly Manufacturable 7th Generation 3D NAND Flash Memory with COP structure and Double Stack Process

Crystallization properties and their drift dependence in phase-change memory studied with a micro-thermal stage

Integration of nanoelectromechanical (NEM) relays with silicon CMOS with functional CMOS-NEM circuit

Fabrication and Characterization of Nanoscale Resistance Change Memory

Metal―Oxide RRAM: Memristors: Devices, Models & Applications

Efficiency Calibration of Bed Type Whole Body Counter Using Monte Carlo Simulations and Application to Intake Estimation of 131I

Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM)

Process Improvements for 7th Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production

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