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A Novel Varying-Bias Read Scheme for MLC and Wide Temperature Range TMO ReRAM

IEEE electron device letters, 2016-11, Vol.37 (11), p.1426-1429

2016

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A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.5172-5179

2018

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A High-Performance Body-Tied FinFET Bandgap Engineered SONOS (BE-SONOS) for nand-Type Flash Memory

IEEE electron device letters, 2007-05, Vol.28 (5), p.443-445

2007

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Phase change materials and their application to random access memory technology

Microelectronic engineering, 2008-12, Vol.85 (12), p.2330-2333

2008

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Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DD17-04DD17-4

2010

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Study of the Erase Mechanism of MANOS ( \hbox\hbox/\hbox/\hbox) Device

IEEE electron device letters, 2007-07, Vol.28 (7), p.643-645

2007

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A Novel Trapping-Nitride-Storage Non-Volatile Memory Cell Using a Gated-Diode Structure With an Ultra-Thin Dielectric Dopant Diffusion Barrier

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2202-2211

2008

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study of incremental step pulse programming (ISPP) and STI edge effect of BE-SONOS NAND Flash

2008 IEEE International Reliability Physics Symposium, 2008, p.693-694

2008

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Sidewall electrode TiOx/TiOxNy resistive random access memory with excellent memory window control and reliability using plasma oxidation and a novel degradation-detecting writing algorithm

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4S)

2017

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The impact of melting during reset operation on the reliability of phase change memory

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.6C.2.1-6C.2.6

2012

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A Novel Gate-Injection Program/Erase P-Channel NAND-Type Flash Memory with High (10M Cycle) Endurance

2007 IEEE Symposium on VLSI Technology, 2007, p.140-141

2007

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A Novel Gate-Sensing and Channel-Sensing Transient Analysis Method for Real-Time Monitoring of Charge Vertical Location in Sonos-Type Devices and its Applications in Reliability Studies

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.177-183

2007

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A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current

Jpn J Appl Phys, 2011-04, Vol.50 (4), p.04DD11-04DD11-5

2011

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Reliability and Processing Effects of Bandgap Engineered SONOS (BE-SONOS) Flash Memory

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.171-176

2007

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Study of Charge Loss Mechanism of SONOS-Type Devices using Hot-Hole Erase and Methods to Improve the Charge Retention

2006 IEEE International Reliability Physics Symposium Proceedings, 2006, p.523-529

2006

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A Novel Channel-Program-Erase Technique with Substrate Transient Hot Carrier Injection for SONOS Memory Application

2006 European Solid-State Device Research Conference, 2006, p.222-225

2006

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A novel high performance WOx ReRAM based on thermally-induced SET operation

2013 Symposium on VLSI Technology, 2013, p.T100-T101

2013

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A novel channel-program–erase technique with substrate transient hot carrier injection for SONOS NAND flash application

Solid-state electronics, 2007-11, Vol.51 (11), p.1523-1528

2007

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Excellent resistance variability control of WOx ReRAM by a smart writing algorithm

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2016, p.1-2

2016

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A Si-Doped High-Performance WOx Resistance Memory Using a Novel Field-Enhanced Structure

2016 IEEE 8th International Memory Workshop (IMW), 2016, p.1-4

2016

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A novel junction-free BE-SONOS NAND flash

2008 Symposium on VLSI Technology, 2008, p.140-141

2008

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Effect of fabrication process on the charge trapping behavior of SiON thin films

Solid-state electronics, 2006-07, Vol.50 (7-8), p.1171-1174

2006

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A High-Speed BE-SONOS NAND Flash Utilizing the Field-Enhancement Effect of FinFET

2007 IEEE International Electron Devices Meeting, 2007, p.913-916

2007

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Excellent high temperature retention of TiOxNy ReRAM by interfacial layer engineering

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2018, p.1-2

2018

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Study of Local Trapping and STI Edge Effects on Charge-Trapping NAND Flash

2007 IEEE International Electron Devices Meeting, 2007, p.161-164

2007

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A Novel Varying-Bias Read Scheme for MLC and Wide Temperature Range TMO ReRAM

A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory

A High-Performance Body-Tied FinFET Bandgap Engineered SONOS (BE-SONOS) for nand-Type Flash Memory

Phase change materials and their application to random access memory technology

Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs

Study of the Erase Mechanism of MANOS ( \hbox\hbox/\hbox/\hbox) Device

A Novel Trapping-Nitride-Storage Non-Volatile Memory Cell Using a Gated-Diode Structure With an Ultra-Thin Dielectric Dopant Diffusion Barrier

study of incremental step pulse programming (ISPP) and STI edge effect of BE-SONOS NAND Flash

Sidewall electrode TiOx/TiOxNy resistive random access memory with excellent memory window control and reliability using plasma oxidation and a novel degradation-detecting writing algorithm

The impact of melting during reset operation on the reliability of phase change memory

A Novel Gate-Injection Program/Erase P-Channel NAND-Type Flash Memory with High (10M Cycle) Endurance

A Novel Gate-Sensing and Channel-Sensing Transient Analysis Method for Real-Time Monitoring of Charge Vertical Location in Sonos-Type Devices and its Applications in Reliability Studies

A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current

Reliability and Processing Effects of Bandgap Engineered SONOS (BE-SONOS) Flash Memory

Study of Charge Loss Mechanism of SONOS-Type Devices using Hot-Hole Erase and Methods to Improve the Charge Retention

A Novel Channel-Program-Erase Technique with Substrate Transient Hot Carrier Injection for SONOS Memory Application

A novel high performance WOx ReRAM based on thermally-induced SET operation

A novel channel-program–erase technique with substrate transient hot carrier injection for SONOS NAND flash application

Excellent resistance variability control of WOx ReRAM by a smart writing algorithm

A Si-Doped High-Performance WOx Resistance Memory Using a Novel Field-Enhanced Structure

A novel junction-free BE-SONOS NAND flash

Effect of fabrication process on the charge trapping behavior of SiON thin films

A High-Speed BE-SONOS NAND Flash Utilizing the Field-Enhancement Effect of FinFET

Excellent high temperature retention of TiOxNy ReRAM by interfacial layer engineering

Study of Local Trapping and STI Edge Effects on Charge-Trapping NAND Flash

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