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A 1.1e- temporal noise 1/3.2-inch 8Mpixel CMOS image sensor using pseudo-multiple sampling

2010 IEEE International Solid-State Circuits Conference - (ISSCC), 2010, p.396-397

2010

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A Low Power Digitizer with Piecewise- Linear Counting Technique for High Dynamic Range Nonacell-Based 3-D-Stacked CMOS Image Sensor

2023 IEEE International Symposium on Circuits and Systems (ISCAS), 2023, p.1-5

2023

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A 1/1.12-inch 1.4\mu\mathrm-Pitch 50Mpixel 65/28nm Stacked CMOS Image Sensor using Mulitple Sampling

2023 IEEE International Symposium on Circuits and Systems (ISCAS), 2023, p.1-4

2023

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A spline large-signal FET model based on bias-dependent pulsed I-V measurement

IEEE transactions on microwave theory and techniques, 2002-11, Vol.50 (11), p.2598-2603

2002

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A 1/1.33-inch 108Mpixel CMOS Image Sensor with 0.8um unit NONACELL pixels

2022 IEEE International Symposium on Circuits and Systems (ISCAS), 2022, p.288-291

2022

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A 0.7 μm-Pitch 108 Mpixel Nonacell-Based CMOS Image Sensor with Decision-Feedback Technique

2022 IEEE International Symposium on Circuits and Systems (ISCAS), 2022, p.283-287

2022

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A 1/3-Inch 1.12μm-Pitch 13Mpixel CMOS Image Sensor with a Low-Power Readout Architecture

2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020, p.1-4

2020

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7.1 A 4-tap 3.5 μm 1.2 Mpixel Indirect Time-of-Flight CMOS Image Sensor with Peak Current Mitigation and Multi-User Interference Cancellation

2021 IEEE International Solid- State Circuits Conference (ISSCC), 2021, Vol.64, p.106-108

2021

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5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology

2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020, p.102-104

2020

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Properties of RFLDMOS with low resistive substrate for handset power applications

2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers, 2005, p.61-64

2005

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A large-signal model of RF LDMOS with skin effects of power combining structures

2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers, 2005, p.149-152

2005

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A large-signal FET model including thermal and trap effects with pulsed I-V measurements

IEEE MTT-S International Microwave Symposium Digest, 2003, 2003, Vol.1, p.467-470 vol.1

2003

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A 2.8 μm Pixel for Time of Flight CMOS Image Sensor with 20 ke-Full-Well Capacity in a Tap and 36 % Quantum Efficiency at 940 nm Wavelength

2020 IEEE International Electron Devices Meeting (IEDM), 2020, p.33.2.1-33.2.4

2020

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Genomic analysis of plasma circulating tumor DNA in patients with heavily pretreated HER2 + metastatic breast cancer

Scientific reports, 2023-06, Vol.13 (1), p.9928-9928, Article 9928

2023

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A 1.1e- temporal noise 1/3.2-inch 8Mpixel CMOS image sensor using pseudo-multiple sampling

A Low Power Digitizer with Piecewise- Linear Counting Technique for High Dynamic Range Nonacell-Based 3-D-Stacked CMOS Image Sensor

A 1/1.12-inch 1.4\mu\mathrm-Pitch 50Mpixel 65/28nm Stacked CMOS Image Sensor using Mulitple Sampling

A spline large-signal FET model based on bias-dependent pulsed I-V measurement

A 1/1.33-inch 108Mpixel CMOS Image Sensor with 0.8um unit NONACELL pixels

A 0.7 μm-Pitch 108 Mpixel Nonacell-Based CMOS Image Sensor with Decision-Feedback Technique

A 1/3-Inch 1.12μm-Pitch 13Mpixel CMOS Image Sensor with a Low-Power Readout Architecture

7.1 A 4-tap 3.5 μm 1.2 Mpixel Indirect Time-of-Flight CMOS Image Sensor with Peak Current Mitigation and Multi-User Interference Cancellation

5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology

Properties of RFLDMOS with low resistive substrate for handset power applications

A large-signal model of RF LDMOS with skin effects of power combining structures

A large-signal FET model including thermal and trap effects with pulsed I-V measurements

A 2.8 μm Pixel for Time of Flight CMOS Image Sensor with 20 ke-Full-Well Capacity in a Tap and 36 % Quantum Efficiency at 940 nm Wavelength

Genomic analysis of plasma circulating tumor DNA in patients with heavily pretreated HER2 + metastatic breast cancer

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