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Practical applications of SiC-MOSFETs and further developments

Semiconductor science and technology, 2016-01, Vol.31 (3), p.34003

2016

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13 kV SiC-DMOSFETs and body diodes for HVDC MMC converters

Japanese Journal of Applied Physics, 2022-01, Vol.61 (1), p.14001

2022

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Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method

Materials science forum, 2014-02, Vol.778-780, p.167-170

2014

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Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells

Journal of applied physics, 2004-06, Vol.95 (11), p.6714-6716

2004

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Leakage current characteristics of Pt∕Bi4−xLaxTi3O12∕Ru ferroelectric capacitors fabricated on metal-organic chemical vapor deposited Ru films

Journal of applied physics, 2006-07, Vol.100 (1)

2006

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Magnetically pinned ring dots for spin valve or magnetic tunnel junction memory cells

Journal of magnetism and magnetic materials, 2005-02, Vol.286, p.31-36

2005

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Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.P63-1-P63-4

2022

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Transition between onion states and vortex states in exchange-coupled Ni - Fe ∕ Mn - Ir asymmetric ring dots

Journal of applied physics, 2006-04, Vol.99 (8), p.08G303-08G303-3

2006

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PREPARATION OF Bi3.25+xLa0.75Ti3O12+y FILMS ON RUTHENIUM ELECTRODES

Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 4A, pp. 2105-2109. 2002, 2002, Vol.41 (4A), p.2105-2109

2002

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Accuracy of the Energy Distribution of the Interface States at the SiO sub(2)/SiC Interface by Conductance Method

Materials Science Forum, 2016-05, Vol.858, p.437-440

2016

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Low Resistivity SiC Devices with a Drift Layer Optimized by Variational Approach

Materials Science Forum, 2016-05, Vol.858, p.765-768

2016

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Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2005-01, Vol.44 (3L), p.L378

2005

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Dielectric relaxation of (Ba, Sr)TiO3 thin films

Japanese journal of applied physics, 1995, Vol.34 (9B), p.5478-5482

1995

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Accuracy of the Energy Distribution of the Interface States at the SiO2/SiC Interface by Conductance Method

Materials science forum, 2016-05, Vol.858, p.437-440

2016

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Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy

Materials science forum, 2015-06, Vol.821-823, p.133-136

2015

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Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

Materials science forum, 2014-02, Vol.778-780, p.91-94, Article 91

2014

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Dielectric properties of (BaxSr1-x)TiO3 thin films prepared by RF sputtering for dynamic random access memory application

Japanese journal of applied physics, 1994, Vol.33 (9B), p.5187-5191

1994

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Influence of Growth Pressure and Addition of HCI Gas on Growth Rate of 4H-SiC Epitaxy

Materials science forum, 2015-06, Vol.821-823, p.133-136

2015

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EFFECTS OF OXYGEN VACANCY DIFFUSION ON LEAKAGE CHARACTERISTICS OF Pt/(Ba0.5Sr0.5)TiO3/Pt CAPACITOR

Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 5A, pp. L416-L419. 2000, 2000, Vol.39 (5A), p.L416-L419

2000

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Evaluation of distribution of exchange coupling in CoFe/Ru/CoFe synthetic antiferromagnetic structure after annealing

Journal of applied physics, 2009-04, Vol.105 (7), p.07C310-07C310-3

2009

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Properties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate

Materials science forum, 2014-02, Vol.778-780, p.820-823

2014

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Characteristics of a Schottky Barrier Diode and the SiC Wafers Sliced by Wire Electrical Discharge Machining

Materials science forum, 2014-02, Vol.778-780, p.784-787

2014

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Electric properties of SrTiO3 thin films prepared by RF sputtering

Japanese journal of applied physics, 1992-09, Vol.31 (9B), p.3025-3028

1992

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Leakage current characteristics of Pt ∕ Bi 4 − x La x Ti 3 O 12 ∕ Ru ferroelectric capacitors fabricated on metal-organic chemical vapor deposited Ru films

Journal of applied physics, 2006-07, Vol.100 (1), p.014108-014108-6

2006

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Thermal robustness in synthetic antiferromagnetic free layer for magnetic random access memory applications

Journal of applied physics, 2006-04, Vol.99 (8), p.08C911-08C911-3

2006

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Practical applications of SiC-MOSFETs and further developments

13 kV SiC-DMOSFETs and body diodes for HVDC MMC converters

Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method

Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells

Leakage current characteristics of Pt∕Bi4−xLaxTi3O12∕Ru ferroelectric capacitors fabricated on metal-organic chemical vapor deposited Ru films

Magnetically pinned ring dots for spin valve or magnetic tunnel junction memory cells

Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs

Transition between onion states and vortex states in exchange-coupled Ni - Fe ∕ Mn - Ir asymmetric ring dots

PREPARATION OF Bi3.25+xLa0.75Ti3O12+y FILMS ON RUTHENIUM ELECTRODES

Accuracy of the Energy Distribution of the Interface States at the SiO sub(2)/SiC Interface by Conductance Method

Low Resistivity SiC Devices with a Drift Layer Optimized by Variational Approach

Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition

Dielectric relaxation of (Ba, Sr)TiO3 thin films

Accuracy of the Energy Distribution of the Interface States at the SiO2/SiC Interface by Conductance Method

Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy

Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

Dielectric properties of (BaxSr1-x)TiO3 thin films prepared by RF sputtering for dynamic random access memory application

Influence of Growth Pressure and Addition of HCI Gas on Growth Rate of 4H-SiC Epitaxy

EFFECTS OF OXYGEN VACANCY DIFFUSION ON LEAKAGE CHARACTERISTICS OF Pt/(Ba0.5Sr0.5)TiO3/Pt CAPACITOR

Evaluation of distribution of exchange coupling in CoFe/Ru/CoFe synthetic antiferromagnetic structure after annealing

Properties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate

Characteristics of a Schottky Barrier Diode and the SiC Wafers Sliced by Wire Electrical Discharge Machining

Electric properties of SrTiO3 thin films prepared by RF sputtering

Leakage current characteristics of Pt ∕ Bi 4 − x La x Ti 3 O 12 ∕ Ru ferroelectric capacitors fabricated on metal-organic chemical vapor deposited Ru films

Thermal robustness in synthetic antiferromagnetic free layer for magnetic random access memory applications

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