UB Paderborn / Katalog / Suche / in CDI

Anisotropy of effective electron masses in highly doped nonpolar GaN

Applied physics letters, 2013-12, Vol.103 (23)

2013

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GaN-based optoelectronics on silicon substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-05, Vol.93 (1), p.77-84

2002

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Template-Assisted Large-Scale Ordered Arrays of ZnO Pillars for Optical and Piezoelectric Applications

Small (Weinheim an der Bergstrasse, Germany), 2006-04, Vol.2 (4), p.561-568

2006

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In-situ growth monitoring of AlInN/AlGaN distributed Bragg reflectors for the UV-spectral range

Journal of crystal growth, 2013-05, Vol.370, p.87-91

2013

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Semipolar single component GaN on planar high index Si(11h) substrates

Applied physics letters, 2010-10, Vol.97 (14), p.142102-142102-3

2010

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Arrays of vertically aligned and hexagonally arranged ZnO nanowires: a new template-directed approach

Nanotechnology, 2005-06, Vol.16 (6), p.913-917

2005

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Laser-Interference Lithography Tailored for Highly Symmetrically Arranged ZnO Nanowire Arrays

Small (Weinheim an der Bergstrasse, Germany), 2007-01, Vol.3 (1), p.76-80

2007

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Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

Journal of applied physics, 2013-06, Vol.113 (21)

2013

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Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy

Applied physics letters, 2009-07, Vol.95 (3), p.032106-032106-3

2009

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Extracting accurate capacitance voltage curves from impedance spectroscopy

Applied physics letters, 2012-01, Vol.100 (4), p.042101-042101-4

2012

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Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates

Physica status solidi. A, Applications and materials science, 2012-03, Vol.209 (3), p.427-430

2012

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Growth and characterization of stacking fault reduced GaN on sapphire

Journal of physics. D, Applied physics, 2013-03, Vol.46 (12), p.125308-1-4

2013

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Growth and coalescence behavior of semipolar $(11{bar {2}}2)$ GaN on pre-structured r-plane sapphire substrates

physica status solidi (b), 2011-03, Vol.248 (3), p.588-593

2011

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Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates

Applied physics letters, 2009-12, Vol.95 (24)

2009

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Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 1020 cm−3

Applied physics letters, 2013-07, Vol.103 (1)

2013

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Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers

Journal of crystal growth, 2010-07, Vol.312 (14), p.2078-2082

2010

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Low-temperature/high-temperature AlN superlattice buffer layers for high-quality AlxGa1―xN on Si (111)

Journal of crystal growth, 2009-07, Vol.311 (14), p.3742-3748

2009

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Determination of the azimuthal orientational spread of GaN films by x-ray diffraction

Applied physics letters, 2002-12, Vol.81 (26), p.4928-4930

2002

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Study on anomalous high p -type conductivity in ZnO films on silicon substrate prepared by ultrasonic spray pyrolysis

Applied physics letters, 2007-02, Vol.90 (6), p.062118-062118-3

2007

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Heavy Si doping: The key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults?

Physica Status Solidi (b), 2011-03, Vol.248 (3), p.578-582

2011

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Growth and stacking fault reduction in semi-polar GaN films on planar Si(112) and Si(113)

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.507-510

2012

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Micro-structural anisotropy of a-plane GaN analyzed by high resolution X-ray diffraction

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S498-S501

2009

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Stress Relaxation in Low-Strain AlInN/GaN Bragg Mirrors

Japanese Journal of Applied Physics, 2011-03, Vol.50 (3), p.031002-031002-6

2011

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Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge

Physical review. B, Condensed matter and materials physics, 2011-05, Vol.83 (19), Article 195202

2011

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Breakdown of Far-Field Raman Selection Rules by Light–Plasmon Coupling Demonstrated by Tip-Enhanced Raman Scattering

The journal of physical chemistry letters, 2017-11, Vol.8 (22), p.5462-5471

2017

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Einstellungen

Anisotropy of effective electron masses in highly doped nonpolar GaN

GaN-based optoelectronics on silicon substrates

Template-Assisted Large-Scale Ordered Arrays of ZnO Pillars for Optical and Piezoelectric Applications

In-situ growth monitoring of AlInN/AlGaN distributed Bragg reflectors for the UV-spectral range

Semipolar single component GaN on planar high index Si(11h) substrates

Arrays of vertically aligned and hexagonally arranged ZnO nanowires: a new template-directed approach

Laser-Interference Lithography Tailored for Highly Symmetrically Arranged ZnO Nanowire Arrays

Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy

Extracting accurate capacitance voltage curves from impedance spectroscopy

Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates

Growth and characterization of stacking fault reduced GaN on sapphire

Growth and coalescence behavior of semipolar $(11{bar {2}}2)$ GaN on pre-structured r-plane sapphire substrates

Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates

Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 1020 cm−3

Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers

Low-temperature/high-temperature AlN superlattice buffer layers for high-quality AlxGa1―xN on Si (111)

Determination of the azimuthal orientational spread of GaN films by x-ray diffraction

Study on anomalous high p -type conductivity in ZnO films on silicon substrate prepared by ultrasonic spray pyrolysis

Heavy Si doping: The key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults?

Growth and stacking fault reduction in semi-polar GaN films on planar Si(112) and Si(113)

Micro-structural anisotropy of a-plane GaN analyzed by high resolution X-ray diffraction

Stress Relaxation in Low-Strain AlInN/GaN Bragg Mirrors

Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge

Breakdown of Far-Field Raman Selection Rules by Light–Plasmon Coupling Demonstrated by Tip-Enhanced Raman Scattering

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