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Nanoelectronics: From Device Physics and Fabrication Technology to Advanced Transistor Concepts

Knoch, Joachim

Second edition, 2024

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Donor deactivation in silicon nanostructures

Nature nanotechnology, 2009-02, Vol.4 (2), p.103-107

2009

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Tunneling phenomena in carbon nanotube field-effect transistors

Physica status solidi. A, Applications and materials science, 2008-04, Vol.205 (4), p.679-694

2008

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Nanoelectronics: Device Physics, Fabrication, Simulation

Knoch, Joachim

2020

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The Role of Metal−Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors

Nano letters, 2005-07, Vol.5 (7), p.1497-1502

2005

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Nanoelectronics : From Device Physics and Fabrication Technology to Advanced Transistor Concepts: From Device Physics and Fabrication Technology to Advanced Transistor Concepts

Knoch, Joachim

2024

Volltextzugriff (PDF)

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating

Beilstein journal of nanotechnology, 2018, Vol.9 (1), p.2255-2264

2018

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Low-Frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes

Nano letters, 2006-05, Vol.6 (5), p.930-936

2006

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Dissolution of donor-vacancy clusters in heavily doped n-type germanium

New journal of physics, 2020-12, Vol.22 (12), p.123036

2020

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Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2243-2247

2022

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Doping Limits of Grown in situ Doped Silicon Nanowires Using Phosphine

Nano letters, 2009-01, Vol.9 (1), p.173-177

2009

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Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy

Journal of applied physics, 2019-06, Vol.125 (24)

2019

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Metal-organic frameworks as an active substrate for cell-interaction studies and cell-on-a-chip platforms

Biosensors and bioelectronics. X, 2024-08, Vol.19, p.100487, Article 100487

2024

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Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures

Advanced Physics Research, 2023-05, Vol.2 (5), p.n/a

2023

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Nanoelectronics: Device Physics, Fabrication, Characterisation

Knoch, Joachim

1st edition., 2020

Volltextzugriff (PDF)

Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.1-7

2024

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1/f Noise in Carbon Nanotube Devices-On the Impact of Contacts and Device Geometry

IEEE transactions on nanotechnology, 2007-05, Vol.6 (3), p.368-373

2007

Volltextzugriff (PDF)

Role of electron and ion irradiation in a reliable lift-off process with electron beam evaporation and a bilayer PMMA resist system

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2021-09, Vol.39 (5)

2021

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On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3684-3689

2021

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Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene

Nano letters, 2024-09, Vol.24 (37), p.11454-11461

2024

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Direct Electroplating on Indium-Tin-Oxide-Coated Textured and Polished Silicon Substrates via Transition Metal Alloyed Interlayers

Journal of the Electrochemical Society, 2022-05, Vol.169 (5), p.52503

2022

Volltextzugriff (PDF)

Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

Micro, 2021-12, Vol.1 (2), p.228-241

2021

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Modeling and Prediction of Hydrogen-Assisted Morphological Evolution in Silicon Utilizing a Level-Set Approach

Journal of microelectromechanical systems, 2021-12, Vol.30 (6), p.950-957

2021

Volltextzugriff (PDF)

Toward Nanowire Electronics

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.2827-2845

2008

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Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature

IEEE electron device letters, 2022-08, Vol.43 (8), p.1187-1190

2022

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Nanoelectronics: From Device Physics and Fabrication Technology to Advanced Transistor Concepts

Donor deactivation in silicon nanostructures

Tunneling phenomena in carbon nanotube field-effect transistors

Nanoelectronics: Device Physics, Fabrication, Simulation

The Role of Metal−Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors

Nanoelectronics : From Device Physics and Fabrication Technology to Advanced Transistor Concepts: From Device Physics and Fabrication Technology to Advanced Transistor Concepts

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating

Low-Frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors

Doping Limits of Grown in situ Doped Silicon Nanowires Using Phosphine

Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy

Metal-organic frameworks as an active substrate for cell-interaction studies and cell-on-a-chip platforms

Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures

Nanoelectronics: Device Physics, Fabrication, Characterisation

Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures

1/f Noise in Carbon Nanotube Devices-On the Impact of Contacts and Device Geometry

Role of electron and ion irradiation in a reliable lift-off process with electron beam evaporation and a bilayer PMMA resist system

On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors

Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene

Direct Electroplating on Indium-Tin-Oxide-Coated Textured and Polished Silicon Substrates via Transition Metal Alloyed Interlayers

Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

Modeling and Prediction of Hydrogen-Assisted Morphological Evolution in Silicon Utilizing a Level-Set Approach

Toward Nanowire Electronics

Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature

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