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The role of chemical potential in compensation control in Si:AlGaN

Journal of applied physics, 2020-03, Vol.127 (10)

2020

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Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Journal of applied physics, 2016-09, Vol.120 (10)

2016

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Shallow Si donor in ion-implanted homoepitaxial AlN

Applied physics letters, 2020-04, Vol.116 (17)

2020

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Design of AlGaN-based quantum structures for low threshold UVC lasers

Journal of applied physics, 2019-12, Vol.126 (22)

2019

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The influence of point defects on the thermal conductivity of AlN crystals

Journal of applied physics, 2018-05, Vol.123 (18)

2018

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Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

Applied physics letters, 2021-01, Vol.118 (4)

2021

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Doping and compensation in heavily Mg doped Al-rich AlGaN films

Applied physics letters, 2022-02, Vol.120 (8)

2022

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High free carrier concentration in p-GaN grown on AlN substrates

Applied physics letters, 2017-07, Vol.111 (3)

2017

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Kinetic Monte Carlo simulations for AlN and AlGaN epitaxial growth on AlN

Journal of crystal growth, 2023-04, Vol.607, p.127125, Article 127125

2023

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High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Applied physics letters, 2020-02, Vol.116 (8)

2020

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Molten Barium Hydroxide as Defect Selective Drop Etchant for Dislocation Analysis on Aluminum Nitride Layers

Physica status solidi. A, Applications and materials science, 2022-04, Vol.219 (7), p.n/a

2022

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Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-05, Vol.36 (3)

2018

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Dislocation Climb in AlN Crystals Grown at Low-Temperature Gradients Revealed by 3D X‑ray Diffraction Imaging

Crystal growth & design, 2023-03, Vol.23 (3), p.1538-1546

2023

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On the Ge shallow-to-deep level transition in Al-rich AlGaN

Journal of applied physics, 2021-08, Vol.130 (5)

2021

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A pathway to highly conducting Ge-doped AlGaN

Journal of applied physics, 2021-11, Vol.130 (20)

2021

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On Ni/Au Alloyed Contacts to Mg-Doped GaN

Journal of electronic materials, 2018, Vol.47 (1), p.305-311

2018

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The role of chemical potential in compensation control in Si:AlGaN

Journal of applied physics, 2020-03, Vol.127 (10)

2020

Volltextzugriff (PDF)

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

Applied physics letters, 2021-07, Vol.119 (2)

2021

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Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

Applied physics letters, 2021-01, Vol.118 (4)

2021

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The effect of illumination power density on carbon defect configuration in silicon doped GaN

Journal of applied physics, 2016-12, Vol.120 (23)

2016

Volltextzugriff (PDF)

The influence of point defects on the thermal conductivity of AlN crystals

Journal of applied physics, 2018-05, Vol.123 (18)

2018

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Multiple Epsilon-Near-Zero Resonances in Multilayered Cadmium Oxide: Designing Metamaterial-Like Optical Properties in Monolithic Materials

ACS photonics, 2019-05, Vol.6 (5), p.1139-1145

2019

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Magnesium Doping and Surface Kinetics of III-Nitrides

Klump, Andrew James

2020

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Correlation between mobility collapse and carbon impurities in Si-doped GaNgrown by low pressure metalorganic chemical vapor deposition

Journal of applied physics, 2016-09, Vol.120 (10)

2016

Volltextzugriff (PDF)

Al Rich AlGaN Based APDs on Single Crystal AlN with Solar Blindness and Room Temperature Operation

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID), 2019, p.1-3

2019

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The role of chemical potential in compensation control in Si:AlGaN

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Shallow Si donor in ion-implanted homoepitaxial AlN

Design of AlGaN-based quantum structures for low threshold UVC lasers

The influence of point defects on the thermal conductivity of AlN crystals

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

Doping and compensation in heavily Mg doped Al-rich AlGaN films

High free carrier concentration in p-GaN grown on AlN substrates

Kinetic Monte Carlo simulations for AlN and AlGaN epitaxial growth on AlN

High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Molten Barium Hydroxide as Defect Selective Drop Etchant for Dislocation Analysis on Aluminum Nitride Layers

Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

Dislocation Climb in AlN Crystals Grown at Low-Temperature Gradients Revealed by 3D X‑ray Diffraction Imaging

On the Ge shallow-to-deep level transition in Al-rich AlGaN

A pathway to highly conducting Ge-doped AlGaN

On Ni/Au Alloyed Contacts to Mg-Doped GaN

The role of chemical potential in compensation control in Si:AlGaN

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

The effect of illumination power density on carbon defect configuration in silicon doped GaN

The influence of point defects on the thermal conductivity of AlN crystals

Multiple Epsilon-Near-Zero Resonances in Multilayered Cadmium Oxide: Designing Metamaterial-Like Optical Properties in Monolithic Materials

Magnesium Doping and Surface Kinetics of III-Nitrides

Correlation between mobility collapse and carbon impurities in Si-doped GaNgrown by low pressure metalorganic chemical vapor deposition

Al Rich AlGaN Based APDs on Single Crystal AlN with Solar Blindness and Room Temperature Operation

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