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High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Journal of crystal growth, 2011-02, Vol.316 (1), p.60-66

2011

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Carrier lifetime variation in thick 4H-SiC epilayers using two-photon absorption

Applied physics letters, 2017-11, Vol.111 (22)

2017

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Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers

Applied physics letters, 2009-03, Vol.94 (9)

2009

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Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption

Materials science forum, 2018-06, Vol.924, p.265-268

2018

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Photoinduced tunability of the reststrahlen band in 4H-SiC

Physical review. B, 2016-02, Vol.93 (8)

2016

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Processing of Cavities in SiC Material for Quantum Technologies

Materials science forum, 2018-06, Vol.924, p.905-908

2018

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Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray Topography

Materials Science Forum, 2016-05, Vol.858 (5, 2016), p.297-300

2016

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Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing

Materials science forum, 2015-06, Vol.821-823, p.297-302

2015

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Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode

Optics express, 2011-10, Vol.19 (22), p.21692-21697

2011

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CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers

Materials science forum, 2010-04, Vol.645-648, p.211-214

2010

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Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers

Materials science forum, 2010-04, Vol.645-648, p.203-206

2010

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Recent Developments in SiC Homoepitaxy Using Dichlorosilane for High Power Devices

MRS proceedings, 2010-01, Vol.1246 (1), Article 1246-B04-06

2010

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Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes

Materials science forum, 2009-01, Vol.600-603, p.481-484

2009

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Long Carrier Lifetimes in n-Type 4H-SiC Epilayers

Materials science forum, 2012, Vol.717-720, p.279-284

Klein, Paul B.

2012

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Optical, Electrical and Lifetime Characterization of In-Grown Stacking Faults in 4H-SiC

MRS proceedings, 2006, Vol.911, Article 0911-B03-05

2006

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Identification of Defects Limiting the Carrier Lifetime in n- Epitaxial Layers of 4H-SiC

Materials science forum, 2010-01, Vol.645-648, p.193-198

Klein, Paul B.

2010

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Cathodoluminescence study of the properties of stacking faultsin 4 H -SiC homoepitaxial layers

Applied physics letters, 2009-03, Vol.94 (9), p.092101-092101-3

2009

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Identification and Carrier Dynamics of the Dominant Lifetime Limiting Defect in n− 4H‐SiC Epitaxial Layers

Silicon Carbide, 2009, p.287-317

2009

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Photoinduced tunability of the reststrahlen band in 4 H − SiC

Physical review. B, 2016-02, Vol.93 (8), Article 085205

2016

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Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals

Materials science forum, 2010-01, Vol.645-648, p.215-218

2010

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Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors

Materials science forum, 2009-01, Vol.615-617, p.291-294

2009

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Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers

Materials science forum, 2009-01, Vol.600-603, p.489-492

2009

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Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers

Materials science forum, 2009-01, Vol.600-603, p.485-488

2009

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Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers

Materials science forum, 2006-10, Vol.527-529, p.493-496

2006

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High Quality Epitaxial Growth on 4 deg Off-axis 4H SiC with Addition of HCI

Materials science forum, 2009-01, Vol.600-603, p.103-106

2009

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High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Carrier lifetime variation in thick 4H-SiC epilayers using two-photon absorption

Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers

Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption

Photoinduced tunability of the reststrahlen band in 4H-SiC

Processing of Cavities in SiC Material for Quantum Technologies

Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray Topography

Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing

Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode

CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers

Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers

Recent Developments in SiC Homoepitaxy Using Dichlorosilane for High Power Devices

Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes

Long Carrier Lifetimes in n-Type 4H-SiC Epilayers

Optical, Electrical and Lifetime Characterization of In-Grown Stacking Faults in 4H-SiC

Identification of Defects Limiting the Carrier Lifetime in n- Epitaxial Layers of 4H-SiC

Cathodoluminescence study of the properties of stacking faultsin 4 H -SiC homoepitaxial layers

Identification and Carrier Dynamics of the Dominant Lifetime Limiting Defect in n− 4H‐SiC Epitaxial Layers

Photoinduced tunability of the reststrahlen band in 4 H − SiC

Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals

Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors

Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers

Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers

Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers

High Quality Epitaxial Growth on 4 deg Off-axis 4H SiC with Addition of HCI

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