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Supercell-size convergence of formation energies and gap levels of vacancy complexes in crystalline silicon in density functional theory calculations

Physical review. B, Condensed matter and materials physics, 2015-10, Vol.92 (14), Article 144104

2015

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How countries link REDD+ interventions to drivers in their readiness plans: implications for monitoring systems

Environmental research letters, 2014-07, Vol.9 (7), p.74004-12

2014

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Ab initio calculations and rate equation simulations for vacancy and vacancy-oxygen clustering in silicon

Journal of crystal growth, 2017-06, Vol.468, p.424-432

2017

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Morphology of oxygen precipitates in silicon wafers pre-treated by rapid thermal annealing

Applied physics letters, 2014-05, Vol.104 (18)

2014

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A free-electron model for the Dirac bands in graphene

Physical review. B, 2016-11, Vol.94 (20), Article 205126

2016

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300 mm Czochralski silicon wafers optimized with respect to voids with laterally homogeneous oxygen precipitation

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.2993-2997

2012

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Oxygen diffusivity in silicon derived from dynamical X-ray diffraction

Journal of applied physics, 2013-02, Vol.113 (7)

2013

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Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers

Journal of the Electrochemical Society, 2007, Vol.154 (6), p.H454

2007

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Modeling the Early Stages of Oxygen Agglomeration

Journal of the Electrochemical Society, 2011, Vol.158 (4), p.H343

2011

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Experimental Determination of Si Self-Interstitial Emission During Oxide Precipitation in Czochralski Silicon

ECS journal of solid state science and technology, 2024-08, Vol.13 (8), p.83005

2024

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Formation of vacancy and oxygen containing complexes in Cz-Si by rapid thermal annealing

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4572-4575

2009

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First principles analysis of atomic configurations of group IV elements in Ge crystal for solar cells

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1718-1721

2014

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Temperature dependent switching behaviour of nickel silicided undoped silicon nanowire devices

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1611-1617

2014

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Electroluminescence of germanium LEDs on silicon: Influence of antimony doping

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1686-1691

2014

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Quantitative analysis of carbon impurity concentration in silicon epitaxial layers by luminescence activation using carbon ion implantation and electron irradiation

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1597-1600

2014

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Comparison of the Impact of Thermal Treatments on the Second and on the Millisecond Scales on the Precipitation of Interstitial Oxygen

ECS journal of solid state science and technology, 2012, Vol.1 (6), p.P269-P275

2012

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Influence of copper contamination on the illuminated forward and dark reverse current-voltage characteristics of multicrystalline p-type silicon solar cells

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1697-1702

2014

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The influence of flash lamp annealing on the minority carrier lifetime of Czochralski silicon wafers

AIP Conference Proceedings, 2014, Vol.1583 (1), p.99

2014

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Preface: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications

Physica status solidi. C, 2012-10, Vol.9 (10-11), p.1865-1867

2012

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Viability of the use of an a-SiC:H multilayer device in a domestic VLC application

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1703-1706

2014

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Band engineering and absorption spectra in compressively strained Ge0.92Sn0.08/Ge (001) double quantum well for infrared photodetection

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1561-1565

2014

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Non-contact high precision alternative to Hg-probe for dopant profiling in SiC

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1601-1605

2014

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Photoluminescence properties of Ce3+ ions in Ce-doped SiO1.5 thin films containing Si nanocrystals

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1630-1633

2014

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Plastic deformation in 200mm silicon wafers arising from mechanical loads in vertical-type and horizontal-type furnaces

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-03, Vol.159-160, p.103-106

2009

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Silicon nanowires: synthesis, optical properties and applications

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1622-1625

2014

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Supercell-size convergence of formation energies and gap levels of vacancy complexes in crystalline silicon in density functional theory calculations

How countries link REDD+ interventions to drivers in their readiness plans: implications for monitoring systems

Ab initio calculations and rate equation simulations for vacancy and vacancy-oxygen clustering in silicon

Morphology of oxygen precipitates in silicon wafers pre-treated by rapid thermal annealing

A free-electron model for the Dirac bands in graphene

300 mm Czochralski silicon wafers optimized with respect to voids with laterally homogeneous oxygen precipitation

Oxygen diffusivity in silicon derived from dynamical X-ray diffraction

Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers

Modeling the Early Stages of Oxygen Agglomeration

Experimental Determination of Si Self-Interstitial Emission During Oxide Precipitation in Czochralski Silicon

Formation of vacancy and oxygen containing complexes in Cz-Si by rapid thermal annealing

First principles analysis of atomic configurations of group IV elements in Ge crystal for solar cells

Temperature dependent switching behaviour of nickel silicided undoped silicon nanowire devices

Electroluminescence of germanium LEDs on silicon: Influence of antimony doping

Quantitative analysis of carbon impurity concentration in silicon epitaxial layers by luminescence activation using carbon ion implantation and electron irradiation

Comparison of the Impact of Thermal Treatments on the Second and on the Millisecond Scales on the Precipitation of Interstitial Oxygen

Influence of copper contamination on the illuminated forward and dark reverse current-voltage characteristics of multicrystalline p-type silicon solar cells

The influence of flash lamp annealing on the minority carrier lifetime of Czochralski silicon wafers

Preface: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications

Viability of the use of an a-SiC:H multilayer device in a domestic VLC application

Band engineering and absorption spectra in compressively strained Ge0.92Sn0.08/Ge (001) double quantum well for infrared photodetection

Non-contact high precision alternative to Hg-probe for dopant profiling in SiC

Photoluminescence properties of Ce3+ ions in Ce-doped SiO1.5 thin films containing Si nanocrystals

Plastic deformation in 200mm silicon wafers arising from mechanical loads in vertical-type and horizontal-type furnaces

Silicon nanowires: synthesis, optical properties and applications

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