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Analysis on Trap States in p-Metal-Oxide-Semiconductor Capacitors with Ultraviolet/Ozone-Treated GaN Interfaces Through Frequency-Dispersion Capacitance–Voltage Measurements

Electronic Materials Letters, 2020, 16(2), , pp.140-145

Kim, Kwangeun

2020

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Investigation in the Ga2O3 passivation layer formed as GaN Schottky barrier through UV/O3 treatment

Results in physics, 2020-03, Vol.16, p.102964, Article 102964

Kim, Kwangeun

2020

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226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection

Applied physics letters, 2018-07, Vol.113 (1)

2018

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Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment

Current Applied Physics, 2020, 20(2), , pp.293-297

2020

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229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

Applied physics letters, 2018-02, Vol.112 (8)

2018

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Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment

Inorganics, 2022-11, Vol.10 (12), p.228

2022

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Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

Micromachines (Basel), 2021-04, Vol.12 (4), p.400

2021

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Transformation of charge polarity at HfO2/GaN interfaces through post-deposition annealing

Journal of the Korean Physical Society, 2024, 84(5), , pp.362-367

2024

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Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field

Materials, 2022-03, Vol.15 (5), p.1943

2022

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Flexible Sol-Gel—Processed Y2O3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process

Materials, 2022-03, Vol.15 (5), p.1899

2022

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Improved Environment Stability of Y2O3 RRAM Devices with Au Passivated Ag Top Electrodes

Materials, 2022-10, Vol.15 (19), p.6859

2022

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Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method

Results in physics, 2021-06, Vol.25, p.104279, Article 104279

2021

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P-type silicon as hole supplier for nitride-based UVC LEDs

New journal of physics, 2019-02, Vol.21 (2), p.23011

2019

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Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires

Nanotechnology, 2011-06, Vol.22 (24), p.245203-245203

2011

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Improved conduction in GaN Schottky junctions with HfO2 passivation layers through post-deposition annealing

Japanese Journal of Applied Physics, 2020-03, Vol.59 (3)

Kim, Kwangeun

2020

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Improved conduction in GaN Schottky junctions with HfO 2 passivation layers through post-deposition annealing

Japanese Journal of Applied Physics, 2020-03, Vol.59 (3), p.30902

Kim, Kwangeun

2020

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Sol–Gel-Processed Y2O3–Al2O3 Mixed Oxide-Based Resistive Random-Access-Memory Devices

Nanomaterials (Basel, Switzerland), 2023-08, Vol.13 (17), p.2462

2023

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Room-Temperature High-Detectivity Flexible Near-Infrared Photodetectors with Chalcogenide Silver Telluride Nanoparticles

ACS omega, 2022-03, Vol.7 (12), p.10262-10267

2022

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UV/Ozone-Treated and Sol–Gel-Processed Y2O3 Insulators Prepared Using Gelation-Delaying Precursors

Nanomaterials (Basel, Switzerland), 2024-05, Vol.14 (9), p.791

2024

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Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory

Nanomaterials (Basel, Switzerland), 2024-03, Vol.14 (6), p.532

2024

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Sol–Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks

Nanomaterials (Basel, Switzerland), 2023-08, Vol.13 (17), p.2432

2023

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Enhancement Mode Flexible SnO2 Thin Film Transistors Via a UV/Ozone-Assisted Sol-Gel Approach

IEEE access, 2020, Vol.8, p.123013-123018

2020

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Polarization-Charge Inversion at Al2O3/GaN Interfaces through Post-Deposition Annealing

Electronics (Basel), 2020-07, Vol.9 (7), p.1068

2020

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Reduction of Leakage Current in GaN Schottky Diodes Through Ultraviolet/Ozone Plasma Treatment

IEEE electron device letters, 2019-11, Vol.40 (11), p.1796-1799

2019

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Ultraviolet Electroluminescence Emission from n-Type ZnO/p-Type Si Crossed Nanowire Light-Emitting Diodes

Japanese Journal of Applied Physics, 2010-06, Vol.49 (6), p.06GG05-06GG05-3

2010

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Analysis on Trap States in p-Metal-Oxide-Semiconductor Capacitors with Ultraviolet/Ozone-Treated GaN Interfaces Through Frequency-Dispersion Capacitance–Voltage Measurements

Investigation in the Ga2O3 passivation layer formed as GaN Schottky barrier through UV/O3 treatment

226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection

Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment

229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment

Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

Transformation of charge polarity at HfO2/GaN interfaces through post-deposition annealing

Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field

Flexible Sol-Gel—Processed Y2O3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process

Improved Environment Stability of Y2O3 RRAM Devices with Au Passivated Ag Top Electrodes

Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method

P-type silicon as hole supplier for nitride-based UVC LEDs

Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires

Improved conduction in GaN Schottky junctions with HfO2 passivation layers through post-deposition annealing

Improved conduction in GaN Schottky junctions with HfO 2 passivation layers through post-deposition annealing

Sol–Gel-Processed Y2O3–Al2O3 Mixed Oxide-Based Resistive Random-Access-Memory Devices

Room-Temperature High-Detectivity Flexible Near-Infrared Photodetectors with Chalcogenide Silver Telluride Nanoparticles

UV/Ozone-Treated and Sol–Gel-Processed Y2O3 Insulators Prepared Using Gelation-Delaying Precursors

Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory

Sol–Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks

Enhancement Mode Flexible SnO2 Thin Film Transistors Via a UV/Ozone-Assisted Sol-Gel Approach

Polarization-Charge Inversion at Al2O3/GaN Interfaces through Post-Deposition Annealing

Reduction of Leakage Current in GaN Schottky Diodes Through Ultraviolet/Ozone Plasma Treatment

Ultraviolet Electroluminescence Emission from n-Type ZnO/p-Type Si Crossed Nanowire Light-Emitting Diodes

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