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Features of electron gas in InAs nanowires imposed by interplay between nanowire geometry, doping and surface states

Scientific reports, 2017-06, Vol.7 (1), p.3411-9, Article 3411

2017

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Analysis of the Effect of Spacer Layers on Nonlinear Distortions of the Current–Voltage Characteristics of GaAlAs/InGaAs pHEMTs

Semiconductors (Woodbury, N.Y.), 2021-12, Vol.55 (12), p.895-898

2021

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Transport Characteristics Calculation of Bilayer Graphene with Different Misorientation Angle

Semiconductors (Woodbury, N.Y.), 2024-04, Vol.58 (4), p.331-334

2024

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Compensation for the Nonlinearity of the Drain–Gate I–V Characteristic in Field-Effect Transistors with a Gate Length of ~100 nm

Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1155-1160

2020

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Analysis of Nonlinear Distortions of DpHEMT Structures Based on a GaAs/In0.53Ga0.47As Compound with Double-Sided Delta-Doping

Russian microelectronics, 2024-02, Vol.53 (1), p.51-56

2024

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Experimental Studies of Modification of the Characteristics of GaAs Structures with Schottky Contacts after Exposure to Fast Neutrons

Semiconductors (Woodbury, N.Y.), 2021-12, Vol.55 (12), p.903-906

2021

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Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter

Russian microelectronics, 2024-02, Vol.53 (1), p.44-50

2024

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Calculating Current–Voltage Characteristics with Negative Differential Conductivity Sections of Superlattices Based on a GaAs/AlAs Compound with Different Numbers of Periods

Bulletin of the Russian Academy of Sciences. Physics, 2023-06, Vol.87 (6), p.800-804

2023

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Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1409-1414

2017

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Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures

Semiconductor science and technology, 2010-08, Vol.25 (8), p.085008-085008

2010

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Analysis of Nonlinear Distortions of Dphemt Structures Based on a GaAs/InGaAs Compound with Double-Sided Delta-Doping

Микроэлектроника, 2024-07, Vol.53 (1), p.3-7

2024

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Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter

Микроэлектроника, 2024-07, Vol.53 (1), p.51-57

2024

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Malignant insulinoma: from the private to the general

Practical medicine, 2019, Vol.17 (4), p.162-165

2019

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Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers

Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.50-54

2015

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Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells

Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.55-59

2015

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Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures

Semiconductor science and technology, 2010, Vol.25 (8)

2010

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Influence of the spatial arrangement of the Si δ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures

Semiconductors (Woodbury, N.Y.), 2015-02, Vol.49 (2), p.139-142

2015

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Determination of the electron concentration and mobility in the vicinity of a quantum well and δ-doped layer in InGaAs/GaAs heterostructures

Semiconductors (Woodbury, N.Y.), 2012-12, Vol.46 (12), p.1497-1501

2012

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Light emission and spin-polarised hole injection in InAs/GaAs quantum dot heterostructures with Schottky contact

Europhysics letters, 2012-04, Vol.98 (2), p.27012

2012

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Tunnel-coupled InGaAs/GaAs quantum wells: Structure, composition, and energy spectrum

Semiconductors (Woodbury, N.Y.), 2012-12, Vol.46 (12), p.1476-1480

2012

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Analysis of nonlinear distortions of DpHEMT structures based on the GaAs/InGaAs compound with double-sided delta-doping

Semiconductors, 2022, Vol.56 (9), p.630

2022

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Design of tunnel-coupled quantum wells for a Mach--Zehnder scheme modulator construction

Semiconductors, 2022, Vol.56 (9), p.619

2022

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Bacteria from the Escherichia coli group as possible pathogens in food poisoning (review of the literature)

Gigiena i sanitarija, 1961-04, Vol.26, p.81

KHAZANOVA, V V

1961

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Diucifon in the treatment of chronic aphthous stomatitis

Stomatologija (Moskva), 1986-01, Vol.65 (1), p.20

1986

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Certification of oral hygiene agents from a microbiological viewpoint

Stomatologija (Moskva), 1995, Vol.74 (6), p.17

1995

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Features of electron gas in InAs nanowires imposed by interplay between nanowire geometry, doping and surface states

Analysis of the Effect of Spacer Layers on Nonlinear Distortions of the Current–Voltage Characteristics of GaAlAs/InGaAs pHEMTs

Transport Characteristics Calculation of Bilayer Graphene with Different Misorientation Angle

Compensation for the Nonlinearity of the Drain–Gate I–V Characteristic in Field-Effect Transistors with a Gate Length of ~100 nm

Analysis of Nonlinear Distortions of DpHEMT Structures Based on a GaAs/In0.53Ga0.47As Compound with Double-Sided Delta-Doping

Experimental Studies of Modification of the Characteristics of GaAs Structures with Schottky Contacts after Exposure to Fast Neutrons

Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter

Calculating Current–Voltage Characteristics with Negative Differential Conductivity Sections of Superlattices Based on a GaAs/AlAs Compound with Different Numbers of Periods

Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures

Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures

Analysis of Nonlinear Distortions of Dphemt Structures Based on a GaAs/InGaAs Compound with Double-Sided Delta-Doping

Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter

Malignant insulinoma: from the private to the general

Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers

Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells

Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures

Influence of the spatial arrangement of the Si δ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures

Determination of the electron concentration and mobility in the vicinity of a quantum well and δ-doped layer in InGaAs/GaAs heterostructures

Light emission and spin-polarised hole injection in InAs/GaAs quantum dot heterostructures with Schottky contact

Tunnel-coupled InGaAs/GaAs quantum wells: Structure, composition, and energy spectrum

Analysis of nonlinear distortions of DpHEMT structures based on the GaAs/InGaAs compound with double-sided delta-doping

Design of tunnel-coupled quantum wells for a Mach--Zehnder scheme modulator construction

Bacteria from the Escherichia coli group as possible pathogens in food poisoning (review of the literature)

Diucifon in the treatment of chronic aphthous stomatitis

Certification of oral hygiene agents from a microbiological viewpoint

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