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N-type control of single-crystal diamond films by ultra-lightly phosphorus doping

Applied physics letters, 2016-10, Vol.109 (14)

2016

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Coherent electric field control of orbital state of a neutral nitrogen-vacancy center

Nature communications, 2024-05, Vol.15 (1), p.4039-7, Article 4039

2024

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Author Correction: Coherent electric field control of orbital state of a neutral nitrogen-vacancy center

Nature communications, 2024-07, Vol.15 (1), p.6095-1, Article 6095

2024

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Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations

Applied physics letters, 2019-06, Vol.114 (24)

2019

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Fabrication of inversion p-channel MOSFET with a nitrogen-doped diamond body

Applied physics letters, 2021-12, Vol.119 (24)

2021

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Direct Nanoscale Sensing of the Internal Electric Field in Operating Semiconductor Devices Using Single Electron Spins

ACS nano, 2017-02, Vol.11 (2), p.1238-1245

2017

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Charge stabilization of shallow nitrogen-vacancy centers using graphene/diamond junctions

Applied physics letters, 2023-04, Vol.122 (14)

2023

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Corrosion‐Resistive and Low Specific Contact Resistance Ohmic Contacts to Semiconducting Diamonds Using Nanocarbon Electrodes

Physica status solidi. A, Applications and materials science, 2023-02, Vol.220 (3), p.n/a

2023

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Electrical excitation of silicon-vacancy centers in single crystal diamond

Applied physics letters, 2015-04, Vol.106 (17)

2015

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Nanocarbon ohmic electrodes fabricated by coaxial arc plasma deposition for phosphorus-doped diamond electronics application

AIP advances, 2022-08, Vol.12 (8), p.085007-085007-6

2022

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n-type diamond synthesized with tert-butylphosphine for long spin coherence times of perfectly aligned NV centers

Journal of applied physics, 2022-11, Vol.132 (17)

2022

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Impact of water vapor annealing treatments on Al2O3/diamond interface

AIP advances, 2024-03, Vol.14 (3), p.035323-035323-6

2024

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n -type doping of (001)-oriented single-crystalline diamond by phosphorus

Applied physics letters, 2005-05, Vol.86 (22), p.222111-222111-3

2005

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Tunable light emission from nitrogen-vacancy centers in single crystal diamond PIN diodes

Applied physics letters, 2013-04, Vol.102 (15)

2013

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Characterization of Schottky Barrier Diodes on Heteroepitaxial Diamond on 3C-SiC/Si Substrates

IEEE transactions on electron devices, 2020-01, Vol.67 (1), p.212-216

2020

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n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface

Journal of physics. D, Applied physics, 2007-10, Vol.40 (20), p.6189-6200

2007

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Single crystal diamond membranes for nanoelectronics

Nanoscale, 2018-01, Vol.10 (8), p.4028-4035

2018

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Atomistic mechanism of perfect alignment of nitrogen-vacancy centers in diamond

Applied physics letters, 2014-12, Vol.105 (26)

2014

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Tuned NV emission by in-plane Al-Schottky junctions on hydrogen terminated diamond

Scientific reports, 2014-01, Vol.4 (1), p.3634-3634, Article 3634

2014

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Electrical characterization of diamond PiN diodes for high voltage applications

Physica status solidi. A, Applications and materials science, 2013-10, Vol.210 (10), p.2035-2039

2013

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Electrical properties of bilayer graphene synthesized using surface wave microwave plasma techniques at low temperature

Nanotechnology, 2017-01, Vol.28 (2), p.025705-025705

2017

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Heavily phosphorus-doped nano-crystalline diamond electrode for thermionic emission application

Diamond and related materials, 2016-03, Vol.63, p.165-168

2016

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Enhancement in emission efficiency of diamond deep-ultraviolet light emitting diode

Applied physics letters, 2011-08, Vol.99 (6), p.061110-061110-3

2011

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Determination of Current Leakage Sites in Diamond p–n Junction

Physica status solidi. A, Applications and materials science, 2019-11, Vol.216 (21), p.n/a

2019

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Vector Electrometry in a Wide-Gap-Semiconductor Device Using a Spin-Ensemble Quantum Sensor

Physical review applied, 2020-10, Vol.14 (4), Article 044049

2020

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N-type control of single-crystal diamond films by ultra-lightly phosphorus doping

Coherent electric field control of orbital state of a neutral nitrogen-vacancy center

Author Correction: Coherent electric field control of orbital state of a neutral nitrogen-vacancy center

Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations

Fabrication of inversion p-channel MOSFET with a nitrogen-doped diamond body

Direct Nanoscale Sensing of the Internal Electric Field in Operating Semiconductor Devices Using Single Electron Spins

Charge stabilization of shallow nitrogen-vacancy centers using graphene/diamond junctions

Corrosion‐Resistive and Low Specific Contact Resistance Ohmic Contacts to Semiconducting Diamonds Using Nanocarbon Electrodes

Electrical excitation of silicon-vacancy centers in single crystal diamond

Nanocarbon ohmic electrodes fabricated by coaxial arc plasma deposition for phosphorus-doped diamond electronics application

n-type diamond synthesized with tert-butylphosphine for long spin coherence times of perfectly aligned NV centers

Impact of water vapor annealing treatments on Al2O3/diamond interface

n -type doping of (001)-oriented single-crystalline diamond by phosphorus

Tunable light emission from nitrogen-vacancy centers in single crystal diamond PIN diodes

Characterization of Schottky Barrier Diodes on Heteroepitaxial Diamond on 3C-SiC/Si Substrates

n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface

Single crystal diamond membranes for nanoelectronics

Atomistic mechanism of perfect alignment of nitrogen-vacancy centers in diamond

Tuned NV emission by in-plane Al-Schottky junctions on hydrogen terminated diamond

Electrical characterization of diamond PiN diodes for high voltage applications

Electrical properties of bilayer graphene synthesized using surface wave microwave plasma techniques at low temperature

Heavily phosphorus-doped nano-crystalline diamond electrode for thermionic emission application

Enhancement in emission efficiency of diamond deep-ultraviolet light emitting diode

Determination of Current Leakage Sites in Diamond p–n Junction

Vector Electrometry in a Wide-Gap-Semiconductor Device Using a Spin-Ensemble Quantum Sensor

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