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A 0.01-8-GHz (12.5 Gb/s) 4[Formula Omitted]4 CMOS Switch Matrix

IEEE transactions on microwave theory and techniques, 2012-02, Vol.60 (2), p.381-386

2012

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A 0.01-8-GHz (12.5 Gb/s) 4 \,\times\,4 CMOS Switch Matrix

IEEE transactions on microwave theory and techniques, 2012-02, Vol.60 (2), p.381-386

2012

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A 0.01―8-GHz (12.5 Gb/s) 4 x 4 CMOS Switch Matrix

IEEE transactions on microwave theory and techniques, 2012-02, Vol.60 (2), p.381-386

2012

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A 0.028% THD+N, 91% power-efficiency, 3-level PWM Class-D amplifier with a true differential front-end

2012 IEEE International Solid-State Circuits Conference, 2012, p.96-98

2012

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A 0.055 mm2 Total Area Triple-Loop Wideband Fractional-N All-Digital Phase-Locked Loop Architecture for 1.9–6.1 GHz Frequency Tuning

Electronics (Basel), 2024-07, Vol.13 (13), p.2638

2024

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A 0.061-pJ/b/dB 28-Gb/s Gradient-Based Maximum Eye Tracking CDR with 2-Tap DFE Adaptation in 28-nm CMOS

IEEE transactions on circuits and systems. II, Express briefs, 2023-11, Vol.70 (11), p.1-1

2023

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A 0.09-pJ/b/dB 28-Gb/s Digital CDR With ISI-Resistant Phase Detector

IEEE transactions on circuits and systems. II, Express briefs, 2024-08, p.1-1

2024

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A 0.1- \mu} 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

IEEE journal of solid-state circuits, 2007-01, Vol.42 (1), p.210-218

2007

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A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

IEEE journal of solid-state circuits, 2007, Vol.42 (1), p.210-218

2007

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A 0.1-[mu]m 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

IEEE journal of solid-state circuits, 2007-01, Vol.42 (1), p.210-218

2007

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0.1 MW th 급 순환유동층에서의 무연탄 연소 전산유체역학 모사

Korean chemical engineering research, 2021, Vol.59 (3), p.417-428

2021

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0.1% RGN-259 (Thymosin ß4) Ophthalmic Solution Promotes Healing and Improves Comfort in Neurotrophic Keratopathy Patients in a Randomized, Placebo-Controlled, Double-Masked Phase III Clinical Trial

International journal of molecular sciences, 2022-12, Vol.24 (1), p.554

2022

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A 0.1/spl mu/m 1.8V 256Mb 66MHz Synchronous Burst PRAM

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers, 2006, p.487-496

2006

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A 0.1-to-1.5GHz 4.2mW All-Digital DLL with Dual Duty-Cycle Correction Circuit and Update Gear Circuit for DRAM in 66nm CMOS Technology

2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2008, p.282-613

2008

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A 0.13-.MU.m CMOS 2.4-GHz Low-Noise Balun-Mixer

IEICE transactions on electronics, 2009, Vol.E92-C (9), p.1223-1225

2009

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A 0.13-.MU.m CMOS Ultra-Wideband Low-Noise Amplifier with High Impedance n-Well Terminals

IEICE transactions on electronics, 2010, Vol.E93-C (10), p.1536-1539

2010

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A 0.13 /spl mu/m CMOS UWB transceiver

ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005, 2005, p.216-594 Vol. 1

2005

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0.15 μm gate length MHEMT technology for 77GHz automotive radar applications

2004

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0.15 /spl mu/m gate length InAlAs/InGaAs power metamorphic HEMT on GaAs substrate with extremely low noise characteristics

International Conference onIndium Phosphide and Related Materials, 2003, 2003, p.114-117

2003

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0.15 /spl mu/m gate length MHEMT technology for 77 GHz automotive radar applications

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.24-27

2004

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A 0.15-μs/V Buck-Boost Symbol-Power-Tracking Supply Modulator With Dual Auxiliary Current Paths and EPP Scheme for 5G NR Power Amplifiers

IEEE transactions on circuits and systems. I, Regular papers, 2023-11, Vol.70 (11), p.4660-4670

2023

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A 0.18-[micro]m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

IEEE journal of solid-state circuits, 2005-01, Vol.40 (1), p.293

2005

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A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

IEEE journal of solid-state circuits, 2005, Vol.40 (1), p.293-300

2005

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A 0.18 /spl mu/m 3.0 V 64 Mb non-volatile phase-transition random-access memory (PRAM)

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519), 2004, p.40-512 Vol.1

2004

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A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

IEEE journal of solid-state circuits, 2005-01, Vol.40 (1), p.293-300

2005

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A 0.01-8-GHz (12.5 Gb/s) 4[Formula Omitted]4 CMOS Switch Matrix

A 0.01-8-GHz (12.5 Gb/s) 4 \,\times\,4 CMOS Switch Matrix

A 0.01―8-GHz (12.5 Gb/s) 4 x 4 CMOS Switch Matrix

A 0.028% THD+N, 91% power-efficiency, 3-level PWM Class-D amplifier with a true differential front-end

A 0.055 mm2 Total Area Triple-Loop Wideband Fractional-N All-Digital Phase-Locked Loop Architecture for 1.9–6.1 GHz Frequency Tuning

A 0.061-pJ/b/dB 28-Gb/s Gradient-Based Maximum Eye Tracking CDR with 2-Tap DFE Adaptation in 28-nm CMOS

A 0.09-pJ/b/dB 28-Gb/s Digital CDR With ISI-Resistant Phase Detector

A 0.1- \mu} 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

A 0.1-[mu]m 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

0.1 MW th 급 순환유동층에서의 무연탄 연소 전산유체역학 모사

0.1% RGN-259 (Thymosin ß4) Ophthalmic Solution Promotes Healing and Improves Comfort in Neurotrophic Keratopathy Patients in a Randomized, Placebo-Controlled, Double-Masked Phase III Clinical Trial

A 0.1/spl mu/m 1.8V 256Mb 66MHz Synchronous Burst PRAM

A 0.1-to-1.5GHz 4.2mW All-Digital DLL with Dual Duty-Cycle Correction Circuit and Update Gear Circuit for DRAM in 66nm CMOS Technology

A 0.13-.MU.m CMOS 2.4-GHz Low-Noise Balun-Mixer

A 0.13-.MU.m CMOS Ultra-Wideband Low-Noise Amplifier with High Impedance n-Well Terminals

A 0.13 /spl mu/m CMOS UWB transceiver

0.15 μm gate length MHEMT technology for 77GHz automotive radar applications

0.15 /spl mu/m gate length InAlAs/InGaAs power metamorphic HEMT on GaAs substrate with extremely low noise characteristics

0.15 /spl mu/m gate length MHEMT technology for 77 GHz automotive radar applications

A 0.15-μs/V Buck-Boost Symbol-Power-Tracking Supply Modulator With Dual Auxiliary Current Paths and EPP Scheme for 5G NR Power Amplifiers

A 0.18-[micro]m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A 0.18 /spl mu/m 3.0 V 64 Mb non-volatile phase-transition random-access memory (PRAM)

A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

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