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Spin-orbit-induced gap modification in buckled honeycomb XBi and XBi3 (X = B, Al, Ga, and In) sheets

Journal of physics. Condensed matter, 2015-12, Vol.27 (48), p.485306-485306

2015

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High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

Journal of crystal growth, 2012, Vol.338 (1), p.52-56

2012

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Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect

Applied physics letters, 2013-11, Vol.103 (21), p.212107

2013

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Ab initio molecular dynamics of atomic-scale surface reactions: insights into metal organic chemical vapor deposition of AlN on graphene

Physical chemistry chemical physics : PCCP, 2018, Vol.2 (26), p.17751-17761

2018

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On the behavior of silicon donor in conductive AlxGa1-xN (0.63 ≤ x ≤ 1)

physica status solidi (b), 2015-06, Vol.252 (6), p.1306-1310

2015

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Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties

Nanotechnology, 2016-04, Vol.27 (14), p.145601-145601

2016

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Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Journal of applied physics, 2010-07, Vol.108 (1), p.014508

2010

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Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material

Journal of physics. D, Applied physics, 2016-05, Vol.49 (17), p.175108-175114

2016

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Mg-doping and free-hole properties of hot-wall MOCVD GaN

Journal of applied physics, 2022-05, Vol.131 (18)

2022

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Topological Insulating Phases in Two-Dimensional Bismuth-Containing Single Layers Preserved by Hydrogenation

Journal of physical chemistry. C, 2015-10, Vol.119 (41), p.23599-23606

2015

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Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures

Journal of crystal growth, 2009-05, Vol.311 (10), p.3007-3010

2009

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Carbon-tuned cathodoluminescence of semi-insulating GaN

Physica status solidi. A, Applications and materials science, 2011-09, Vol.208 (9), p.2182-2185

2011

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Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy

Nanotechnology, 2019-07, Vol.30 (28), p.284003-284003

2019

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The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN

Applied physics letters, 2013-04, Vol.102 (13), p.132113

2013

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Tuning band inversion symmetry of buckled III-Bi sheets by halogenation

Nanotechnology, 2016-02, Vol.27 (5), p.055704-055704

2016

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Dopant species with Al-Si and N-Si bonding in the MOCVD of AlN implementing trimethylaluminum, ammonia and silane

Journal of physics. D, Applied physics, 2015-07, Vol.48 (29), p.295104-7

2015

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All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

Journal of crystal growth, 2007-03, Vol.300 (1), p.223-227

2007

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Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature

Physica status solidi. PSS-RRL. Rapid research letters, 2010-11, Vol.4 (11), p.311-313

2010

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Feasibility of novel (H3C)nX(SiH3)3-n compounds (X = B, Al, Ga, In): structure, stability, reactivity, and Raman characterization from ab initio calculations

Dalton transactions : an international journal of inorganic chemistry, 2015-02, Vol.44 (7), p.3356-3366

2015

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Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1−xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect

Journal of applied physics, 2017-05, Vol.121 (20)

2017

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Defects in hexagonal-AIN sheets by first-principles calculations

The European physical journal. B, Condensed matter physics, 2012, Vol.85 (1)

2012

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Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers

Applied physics letters, 2014-08, Vol.105 (8)

2014

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Sublimation growth of AlN crystals: Growth mode and structure evolution

Journal of crystal growth, 2005-07, Vol.281 (1), p.81-86

2005

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Growth of 6H and 4H–SiC by sublimation epitaxy

Journal of crystal growth, 1999-02, Vol.197 (1), p.155-162

1999

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Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AlN

Crystal growth & design, 2009-02, Vol.9 (2), p.880-884

2009

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Spin-orbit-induced gap modification in buckled honeycomb XBi and XBi3 (X = B, Al, Ga, and In) sheets

High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect

Ab initio molecular dynamics of atomic-scale surface reactions: insights into metal organic chemical vapor deposition of AlN on graphene

On the behavior of silicon donor in conductive AlxGa1-xN (0.63 ≤ x ≤ 1)

Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material

Mg-doping and free-hole properties of hot-wall MOCVD GaN

Topological Insulating Phases in Two-Dimensional Bismuth-Containing Single Layers Preserved by Hydrogenation

Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures

Carbon-tuned cathodoluminescence of semi-insulating GaN

Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy

The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN

Tuning band inversion symmetry of buckled III-Bi sheets by halogenation

Dopant species with Al-Si and N-Si bonding in the MOCVD of AlN implementing trimethylaluminum, ammonia and silane

All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature

Feasibility of novel (H3C)nX(SiH3)3-n compounds (X = B, Al, Ga, In): structure, stability, reactivity, and Raman characterization from ab initio calculations

Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1−xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect

Defects in hexagonal-AIN sheets by first-principles calculations

Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers

Sublimation growth of AlN crystals: Growth mode and structure evolution

Growth of 6H and 4H–SiC by sublimation epitaxy

Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AlN

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