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Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications

IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.1956-1963

2018

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Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3343-3348

2006

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Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2379-2383

2007

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Degradation of GaN LEDs by electron irradiation

Materials science & engineering. B, Solid-state materials for advanced technology, 2010-10, Vol.173 (1), p.57-60

2010

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Study of Latent Damage in Power MOSFETs Caused by Heavy Ion Irradiation

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3388-3393

2008

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Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2019, p.1-4

2019

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Heavy ion-induced damage in SiC Schottky barrier diode

Physica. B, Condensed matter, 2006-04, Vol.376, p.362-366

2006

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Optimization for SEU/SET Immunity on 0.15 $\mu$m Fully Depleted CMOS/SOI Digital Logic Devices

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3422-3427

2006

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Single-event burnout of Super-junction power MOSFETs

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3332-3335

2004

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New SET Characterization Technique Using SPICE for Fully Depleted CMOS/SOI Digital Circuitry

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2921-2927

2008

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Hardness-by-design approach for 0.15 mu m fully depleted CMOS/SOI digital logic devices with enhanced SEU/SET immunity

IEEE transactions on nuclear science, 2005-12, Vol.52 (6)

2005

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Effects of electron irradiation on SiGe devices

Thin solid films, 2010-02, Vol.518 (9), p.2517-2520

2010

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Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs

IEEE transactions on nuclear science, 2014-08, Vol.61 (4), p.1924-1928

2014

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Averaged LET Spectra for SEE Rate Prediction for Power Devices

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2056-2060

2009

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Evaluation of the Proton Induced Bulk Damage in SDRAM Utilizing 90 nm Process Technology

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2233-2237

2007

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Local and pseudo SELs observed in digital LSIs and their implication to SEL test method

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2638-2641

2005

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Analysis of angular dependence of proton-induced multiple-bit upsets in a synchronous SRAM

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2200-2204

2005

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Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation

Physica. B, Condensed matter, 2006-04, Vol.376, p.382-384

2006

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Device performance of p-Ge MOSFETs at liquid nitrogen temperature

Thin solid films, 2010-02, Vol.518 (9), p.2513-2516

2010

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Improved model for single-event burnout mechanism

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3336-3341

2004

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Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiation

Physica. B, Condensed matter, 2007-12, Vol.401, p.469-472

2007

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Effect of gate interface on performance degradation of irradiated SiC-MESFET

Physica. B, Condensed matter, 2007-12, Vol.401, p.37-40

2007

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Enhanced avalanche multiplication factor and single-event burnout

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.2233-2238

2003

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Re-training Deep Neural Networks to Facilitate Boolean Concept Extraction

Discovery Science, p.127-143

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Angular dependence of multiple-bit upsets induced by protons in a 16 mbit DRAM

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3270-3277

2004

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Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications

Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout

Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons

Degradation of GaN LEDs by electron irradiation

Study of Latent Damage in Power MOSFETs Caused by Heavy Ion Irradiation

Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs

Heavy ion-induced damage in SiC Schottky barrier diode

Optimization for SEU/SET Immunity on 0.15 $\mu$m Fully Depleted CMOS/SOI Digital Logic Devices

Single-event burnout of Super-junction power MOSFETs

New SET Characterization Technique Using SPICE for Fully Depleted CMOS/SOI Digital Circuitry

Hardness-by-design approach for 0.15 mu m fully depleted CMOS/SOI digital logic devices with enhanced SEU/SET immunity

Effects of electron irradiation on SiGe devices

Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs

Averaged LET Spectra for SEE Rate Prediction for Power Devices

Evaluation of the Proton Induced Bulk Damage in SDRAM Utilizing 90 nm Process Technology

Local and pseudo SELs observed in digital LSIs and their implication to SEL test method

Analysis of angular dependence of proton-induced multiple-bit upsets in a synchronous SRAM

Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation

Device performance of p-Ge MOSFETs at liquid nitrogen temperature

Improved model for single-event burnout mechanism

Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiation

Effect of gate interface on performance degradation of irradiated SiC-MESFET

Enhanced avalanche multiplication factor and single-event burnout

Re-training Deep Neural Networks to Facilitate Boolean Concept Extraction

Angular dependence of multiple-bit upsets induced by protons in a 16 mbit DRAM

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