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An Investigation of Negative Differential Resistance and Novel Collector-Current Kink Effects in SiGe HBTs Operating at Cryogenic Temperatures

IEEE transactions on electron devices, 2007-03, Vol.54 (3), p.504-516

2007

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On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds

IEEE transactions on electron devices, 2009-05, Vol.56 (5), p.1007-1019

2009

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Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2744-2752

2005

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Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications

IEEE journal of solid-state circuits, 2004-10, Vol.39 (10), p.1605-1614

2004

Volltextzugriff (PDF)

On Common-Base Avalanche Instabilities in SiGe HBTs

IEEE transactions on electron devices, 2008-06, Vol.55 (6), p.1276-1285

2008

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The Effects of Scaling and Bias Configuration on Operating-Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits

IEEE transactions on electron devices, 2007-07, Vol.54 (7), p.1605-1616

2007

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Optimizing the vertical profile of SiGe HBTs to mitigate radiation-induced upsets

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015, p.72-75

2015

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Impact of Scaling on the Inverse-Mode Operation of SiGe HBTs

IEEE transactions on electron devices, 2007-06, Vol.54 (6), p.1492-1501

2007

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On the high-temperature (to 300/spl deg/C) characteristics of SiGe HBTs

IEEE transactions on electron devices, 2004-11, Vol.51 (11), p.1825-1832

2004

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Scaling and technological limitations of 1/f noise and oscillator phase noise in SiGe HBTs

IEEE transactions on microwave theory and techniques, 2005-02, Vol.53 (2), p.506-514

2005

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An inductorless Ka-band SiGe HBT ring oscillator

IEEE microwave and wireless components letters, 2005-10, Vol.15 (10), p.682-684

2005

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Optimization of SiGe HBTs for operation at high current densities

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1347-1354

1999

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Impact of collector-base junction traps on low-frequency noise in high breakdown Voltage SiGe HBTs

IEEE transactions on electron devices, 2004-09, Vol.51 (9), p.1475-1482

2004

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Limiting Effects on the Design of Vertical Superjunction Collectors in SiGe HBTs

IEEE transactions on electron devices, 2018-02, Vol.65 (2), p.793-797

2018

Volltextzugriff (PDF)

The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs

IEEE transactions on electron devices, 2002-03, Vol.49 (3), p.429-435

2002

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The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGe HBT BiCMOS technology

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2515-2520

2000

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The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology

Solid-state electronics, 2005-06, Vol.49 (6), p.986-990

2005

Volltextzugriff (PDF)

SiGe BiCMOS technologies - addressing the communication market needs

IEEE Compound Semiconductor Integrated Circuit Symposium, 2004, 2004, p.35-38

Joseph, A.J.

2004

Volltextzugriff (PDF)

Proton response of low-frequency noise in 0.20 μm 90 GHz fT UHV/CVD SiGe HBTs

Solid-state electronics, 2003, Vol.47 (1), p.39-44

2003

Volltextzugriff (PDF)

Operation of SiGe heterojunction bipolar transistors in the liquid-helium temperature regime

IEEE electron device letters, 1995-06, Vol.16 (6), p.268-270

1995

Volltextzugriff (PDF)

Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS

Proceedings of the IEEE, 2005, Vol.93 (9), p.1539-1558

2005

Volltextzugriff (PDF)

On the use of vertical superjunction collectors for enhanced breakdown performance in SiGe HBTs

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2016, p.21-24

2016

Volltextzugriff (PDF)

Low-frequency noise figures-of-merit in RF SiGe HBT technology

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.1, p.179-182 vol.1

2002

Volltextzugriff (PDF)

Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs

Solid-state electronics, 2001, Vol.45 (1), p.107-112

2001

Volltextzugriff (PDF)

A new common-emitter hybrid-π small-signal equivalent circuit for bipolar transistors with significant neutral base recombination

IEEE transactions on electron devices, 1999, Vol.46 (6), p.1166-1173

1999

Volltextzugriff (PDF)

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An Investigation of Negative Differential Resistance and Novel Collector-Current Kink Effects in SiGe HBTs Operating at Cryogenic Temperatures

On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds

Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances

Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications

On Common-Base Avalanche Instabilities in SiGe HBTs

The Effects of Scaling and Bias Configuration on Operating-Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits

Optimizing the vertical profile of SiGe HBTs to mitigate radiation-induced upsets

Impact of Scaling on the Inverse-Mode Operation of SiGe HBTs

On the high-temperature (to 300/spl deg/C) characteristics of SiGe HBTs

Scaling and technological limitations of 1/f noise and oscillator phase noise in SiGe HBTs

An inductorless Ka-band SiGe HBT ring oscillator

Optimization of SiGe HBTs for operation at high current densities

Impact of collector-base junction traps on low-frequency noise in high breakdown Voltage SiGe HBTs

Limiting Effects on the Design of Vertical Superjunction Collectors in SiGe HBTs

The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs

The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGe HBT BiCMOS technology

The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology

SiGe BiCMOS technologies - addressing the communication market needs

Proton response of low-frequency noise in 0.20 μm 90 GHz fT UHV/CVD SiGe HBTs

Operation of SiGe heterojunction bipolar transistors in the liquid-helium temperature regime

Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS

On the use of vertical superjunction collectors for enhanced breakdown performance in SiGe HBTs

Low-frequency noise figures-of-merit in RF SiGe HBT technology

Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs

A new common-emitter hybrid-π small-signal equivalent circuit for bipolar transistors with significant neutral base recombination

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