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A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1− xGex and Si layers

Beilstein journal of nanotechnology, 2018-07, Vol.9 (1), p.1926-1939

2018

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Electrical characterization of SOI pMOS device leakage

Solid-state electronics, 2023-10, Vol.208, p.108740, Article 108740

2023

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AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2843-2848

2007

Volltextzugriff (PDF)

SOI pMOS drain leakage understanding based on TCAD and measurements

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.65-68

2023

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Doped Channel SOI pMOS TCAD Description Including Floating Body Effects

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.69-72

2023

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Blister formation mechanism during high dose implanted photoresist stripping

Microelectronic engineering, 2018-07, Vol.194, p.25-30

2018

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A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1-x Ge x and Si layers

Beilstein journal of nanotechnology, 2018-01, Vol.9, p.1926-1939

2018

Volltextzugriff (PDF)

Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO2

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, p.219-223

2021

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A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si 1- x Ge x and Si layers

Beilstein journal of nanotechnology, 2018-07, Vol.9, p.1926-1939

2018

Volltextzugriff (PDF)

Technological enhancers effect on Ni0.9Co0.1 silicide stability for 3D sequential integration

Physica status solidi. C, 2016-12, Vol.13 (10-12), p.760-765

2016

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AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz

IEEE transactions on electron devices, 2010-07, Vol.57 (7), p.1497-1503

2010

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Technological enhancers effect on Ni sub(0.9)Co sub(0.1) silicide stability for 3D sequential integration

Physica status solidi. C, 2016-12, Vol.13 (10-12), p.760-765

2016

Volltextzugriff (PDF)

Technological enhancers effect on Ni 0.9 Co 0.1 silicide stability for 3D sequential integration

Physica status solidi. C, 2016-12, Vol.13 (10-12), p.760-765

2016

Volltextzugriff (PDF)

Modeling and Frequency Performance Analysis of Through Silicon Capacitors in Silicon Interposers

IEEE transactions on components, packaging, and manufacturing technology (2011), 2017-04, Vol.7 (4), p.477-484

2017

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Effects of Pre-amorphization Thickness and Carbon Implantation on NiPt/Si Silicidation Process

2018 22nd International Conference on Ion Implantation Technology (IIT), 2018, p.54-57

2018

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Damage accumulation during cryogenic and room temperature implantations in strained SiGe alloys

Materials science in semiconductor processing, 2016-02, Vol.42, p.247-250

2016

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Electrical Model of Different Architectures of through Silicon Capacitors for High Frequency Power Distribution Network (PDN) Decoupling Operations

2016 IEEE 66th Electronic Components and Technology Conference (ECTC), 2016, p.74-81

2016

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Through Silicon Capacitors (TSC) for noise reduction in Power Distribution Network

2015 IEEE 65th Electronic Components and Technology Conference (ECTC), 2015, p.247-253

2015

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Hexagonal c-axis GaN layers grown by metalorganic vapor-phase epitaxy on Si(0 0 1)

Journal of crystal growth, 2005-06, Vol.280 (1), p.44-53

2005

Volltextzugriff (PDF)

Pre-Amorphization Implants and in-situ Surface Preparation Optimization for Low Co-Silicided Area Density

2019 19th International Workshop on Junction Technology (IWJT), 2019, p.1-4

2019

Volltextzugriff (PDF)

Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE

MRS proceedings, 2008, Vol.1068, Article 1068-C04-04

2008

Volltextzugriff (PDF)

Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates

Physica status solidi. C, 2007-06, Vol.4 (7), p.2670-2673

2007

Volltextzugriff (PDF)

Prevention of Temperature-Induced Dewetting of Implanted SOI via Heated Ion Implantation

2018 22nd International Conference on Ion Implantation Technology (IIT), 2018, p.29-32

2018

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Characterization of Heated Ion Implantation for non Amorphizing Conditions and Correlation with Kinetic Monte Carlo Simulations

2018 22nd International Conference on Ion Implantation Technology (IIT), 2018, p.121-124

2018

Volltextzugriff (PDF)

High frequency modeling of Through Silicon Capacitors (TSC) architectures in silicon interposer

2016 IEEE 20th Workshop on Signal and Power Integrity (SPI), 2016, p.1-4

2016

Volltextzugriff (PDF)

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A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1− xGex and Si layers

Electrical characterization of SOI pMOS device leakage

AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

SOI pMOS drain leakage understanding based on TCAD and measurements

Doped Channel SOI pMOS TCAD Description Including Floating Body Effects

Blister formation mechanism during high dose implanted photoresist stripping

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1-x Ge x and Si layers

Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO2

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si 1- x Ge x and Si layers

Technological enhancers effect on Ni0.9Co0.1 silicide stability for 3D sequential integration

AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz

Technological enhancers effect on Ni sub(0.9)Co sub(0.1) silicide stability for 3D sequential integration

Technological enhancers effect on Ni 0.9 Co 0.1 silicide stability for 3D sequential integration

Modeling and Frequency Performance Analysis of Through Silicon Capacitors in Silicon Interposers

Effects of Pre-amorphization Thickness and Carbon Implantation on NiPt/Si Silicidation Process

Damage accumulation during cryogenic and room temperature implantations in strained SiGe alloys

Electrical Model of Different Architectures of through Silicon Capacitors for High Frequency Power Distribution Network (PDN) Decoupling Operations

Through Silicon Capacitors (TSC) for noise reduction in Power Distribution Network

Hexagonal c-axis GaN layers grown by metalorganic vapor-phase epitaxy on Si(0 0 1)

Pre-Amorphization Implants and in-situ Surface Preparation Optimization for Low Co-Silicided Area Density

Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE

Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates

Prevention of Temperature-Induced Dewetting of Implanted SOI via Heated Ion Implantation

Characterization of Heated Ion Implantation for non Amorphizing Conditions and Correlation with Kinetic Monte Carlo Simulations

High frequency modeling of Through Silicon Capacitors (TSC) architectures in silicon interposer

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