UB Paderborn / Katalog / Suche / in CDI

1 – 20 von 20

Sortiert nach

Temperature-dependent current-voltage characteristics of β-Ga2O3 trench Schottky barrier diodes

Applied physics letters, 2020-04, Vol.116 (15)

2020

Volltextzugriff (PDF)

Switching Performance Analysis of 3.5 kV Ga2O3 Power FinFETs

IEEE transactions on electron devices, 2021-02, Vol.68 (2), p.672-678

2021

Volltextzugriff (PDF)

Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters

AIP advances, 2024-02, Vol.14 (2), p.025344-025344-8

2024

Volltextzugriff (PDF)

Deep UV-assisted capacitance–voltage characterization of post-deposition annealed Al2O3/β-Ga2O3 (001) MOSCAPs

Applied physics letters, 2020-06, Vol.116 (24)

2020

Volltextzugriff (PDF)

Switching Performance Analysis of 3.5 kV Ga 2 O 3 Power FinFETs

IEEE transactions on electron devices, 2021-02, Vol.68 (2), p.672-678

2021

Volltextzugriff (PDF)

Design of ultra-scaled-channel N-polar GaN HEMTs with high charge density: A systematic study of hole traps and their impact on charge density in the channel

Journal of applied physics, 2020-12, Vol.128 (23)

2020

Volltextzugriff (PDF)

Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions

Applied physics letters, 2021-07, Vol.119 (4)

2021

Volltextzugriff (PDF)

Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001)

Applied physics letters, 2021-04, Vol.118 (17)

2021

Volltextzugriff (PDF)

Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga2O3 (001) substrates

Applied physics letters, 2022-04, Vol.120 (14)

2022

Volltextzugriff (PDF)

Selective-area growth of GaN and AlGaN nanowires on N-polar GaN templates with 4° miscut by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2023-06, Vol.611, p.127181, Article 127181

2023

Volltextzugriff (PDF)

Chlorine-based inductive coupled plasma etching of α -Ga 2 O 3

Semiconductor science and technology, 2019-03, Vol.34 (3), p.35006

2019

Volltextzugriff (PDF)

Improved operational reliability of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001) by post-metallization annealing

Semiconductor science and technology, 2021-09, Vol.36 (9)

2021

Volltextzugriff (PDF)

Improved operational reliability of MOCVD-grown AlSiO gate dielectric on β-Ga 2 O 3 (001) by post-metallization annealing

Semiconductor science and technology, 2021-09, Vol.36 (9), p.9

2021

Volltextzugriff (PDF)

HfO 2 as gate insulator on N-polar GaN-AlGaN heterostructures

Semiconductor science and technology, 2021-02

2021

Volltextzugriff (PDF)

HfO2 as gate insulator on N-polar GaN-AlGaN heterostructures

Semiconductor science and technology, 2021-03, Vol.36 (3)

2021

Volltextzugriff (PDF)

Chlorine-based inductive coupled plasma etching of -Ga2O3

Semiconductor science and technology, 2019-01, Vol.34 (3)

2019

Volltextzugriff (PDF)

Shining a Light on How Soil Organic Carbon Behaves at Fine Scales under Long-Term Elevated CO 2 : An 8 Year Free-Air Carbon Dioxide Enrichment Study

Environmental science & technology, 2024-05, Vol.58 (20), p.8724-8735

2024

Volltextzugriff (PDF)

Shining a Light on How Soil Organic Carbon Behaves at Fine Scales under Long-Term Elevated CO2: An 8 Year Free-Air Carbon Dioxide Enrichment Study

Environmental science & technology, 2024-05, Vol.58 (20), p.8724-8735

2024

Volltextzugriff (PDF)

Cerastecin Inhibition of the Lipooligosaccharide Transporter MsbA to Combat Acinetobacter baumannii: From Screening Impurity to In Vivo Efficacy

Journal of medicinal chemistry, 2024-08

2024

Volltextzugriff (PDF)

Attenuation of estrogen receptor alpha-mediated transcription through estrogen-stimulated recruitment of a negative elongation factor

Genes & development, 2004-09, Vol.18 (17), p.2134-2146

2004

Volltextzugriff (PDF)

1 – 20 von 20

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(20)
Mit Volltextzugriff
(20)

Publikationsform

Artikel
(20)

Sprache

Englisch
(20)

Erscheinungsjahr

n.n

Thema

Science & Technology
(12)
Physical Sciences
(10)
Physics
(10)
Physics, Applied
(8)
Applied Physics
(6)
Gallium Oxides
(6)
Technology
(5)
Annealing
(4)
Engineering
(4)
Aluminum Oxide
(3)
Atomic Layer Epitaxy
(3)
Engineering, Electrical & Electronic
(3)
Gallium Nitrides
(3)
Materials Science
(3)
Materials Science, Multidisciplinary
(3)
Bulk Density
(2)
Capacitance
(2)
Chlorine-Based Dry Etch
(2)
Climate Change
(2)
Dielectric Breakdown
(2)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Temperature-dependent current-voltage characteristics of β-Ga2O3 trench Schottky barrier diodes

Switching Performance Analysis of 3.5 kV Ga2O3 Power FinFETs

Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters

Deep UV-assisted capacitance–voltage characterization of post-deposition annealed Al2O3/β-Ga2O3 (001) MOSCAPs

Switching Performance Analysis of 3.5 kV Ga 2 O 3 Power FinFETs

Design of ultra-scaled-channel N-polar GaN HEMTs with high charge density: A systematic study of hole traps and their impact on charge density in the channel

Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions

Characterization of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001)

Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga2O3 (001) substrates

Selective-area growth of GaN and AlGaN nanowires on N-polar GaN templates with 4° miscut by plasma-assisted molecular beam epitaxy

Chlorine-based inductive coupled plasma etching of α -Ga 2 O 3

Improved operational reliability of MOCVD-grown AlSiO gate dielectric on β-Ga2O3 (001) by post-metallization annealing

Improved operational reliability of MOCVD-grown AlSiO gate dielectric on β-Ga 2 O 3 (001) by post-metallization annealing

HfO 2 as gate insulator on N-polar GaN-AlGaN heterostructures

HfO2 as gate insulator on N-polar GaN-AlGaN heterostructures

Chlorine-based inductive coupled plasma etching of -Ga2O3

Shining a Light on How Soil Organic Carbon Behaves at Fine Scales under Long-Term Elevated CO 2 : An 8 Year Free-Air Carbon Dioxide Enrichment Study

Shining a Light on How Soil Organic Carbon Behaves at Fine Scales under Long-Term Elevated CO2: An 8 Year Free-Air Carbon Dioxide Enrichment Study

Cerastecin Inhibition of the Lipooligosaccharide Transporter MsbA to Combat Acinetobacter baumannii: From Screening Impurity to In Vivo Efficacy

Attenuation of estrogen receptor alpha-mediated transcription through estrogen-stimulated recruitment of a negative elongation factor

Suchergebnisse filtern