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A 0.0012 mm[sup.2] 6-bit 700 MS/s 1 mW Calibration-Free Pseudo-Loop-Unrolled SAR ADC in 28 nm CMOS

Electronics (Basel), 2022-06, Vol.11 (11)

2022

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A 0.0012 mm2 6-bit 700 MS/s 1 mW Calibration-Free Pseudo-Loop-Unrolled SAR ADC in 28 nm CMOS

Electronics (Basel), 2022-05, Vol.11 (11), p.1707

2022

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A 0.0308mm2 4.15pJ/conv VCO-Based Current Sensing Front-End with 2nd-Order Δ2 ΔΣ Modulation

2022 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2022, p.1-3

2022

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0-1 Tableaux and the p,q-Legendre-Stirling numbers of the second kind

Discrete mathematics, 2024-06, Vol.347 (6), p.113943, Article 113943

2024

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A 0.1-to-1.5GHz 4.2mW All-Digital DLL with Dual Duty-Cycle Correction Circuit and Update Gear Circuit for DRAM in 66nm CMOS Technology

2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2008, p.282-613

2008

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0.1% 클로르헥시딘과 탄툼액을 이용한 구강간호가 기관내관을 삽입한 중환자실 환자의 구강상태 및 구강내 세균 발생에 미치는 효과

Chunghwanja Kanho Hakhoe chi, 2010, Vol.3 (2), p.25-35

2010

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0.12 µm Gate Length T-Shaped AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Fabricated Using a Plasma-Enhanced Chemical Vapor Deposited Silicon–Nitride-Assisted Process

Japanese Journal of Applied Physics, 2004-12, Vol.43 (12), p.7934-7938

2004

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A 0.166 pJ/b/pF, 3.5–5 Gb/s TSV I/O Interface With V OH Drift Control

IEEE transactions on circuits and systems. II, Express briefs, 2021-06, Vol.68 (6), p.1822-1826

2021

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A 0.166 pJ/b/pF, 3.5-5 Gb/s TSV I/O Interface With VOH Drift Control

IEEE transactions on circuits and systems. II, Express briefs, 2021-06, Vol.68 (6), p.1822-1826

2021

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A 0.16mm2 12b 30MS/s 0.18μm CMOS SAR ADC based on low-power composite switching

2015 International SoC Design Conference (ISOCC), 2015, p.77-78

2015

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A 0.25–1.0 V fully synthesizable three-stage dynamic voltage comparator based XOR&XNOR&NAND&NOR logic

Analog integrated circuits and signal processing, 2021-07, Vol.108 (1), p.221-228

2021

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0–3 type Bi3TaTiO9:40wt%BiFeO3 composite with improved high-temperature piezoelectric properties

Journal of alloys and compounds, 2018-04, Vol.740, p.1-6

2018

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A 0.35 V-to-1.0 V synthesizable rail-to-rail dynamic voltage comparator based OAI&AOI logic

Analog integrated circuits and signal processing, 2020-09, Vol.104 (3), p.351-357

2020

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0.37mW/Gb/s low power SLVS transmitter for battery powered applications

2012 IEEE International Symposium on Circuits and Systems (ISCAS), 2012, p.1955-1958

2012

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A 0.45 pm of linewidth, single-longitudinal-mode Tm:YLF laser based on reflecting Bragg gratings and Fabry-Perot etalons

Optics communications, 2023-12, Vol.548, p.129877, Article 129877

2023

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A 0.5-V Sub-10-μW 15.28-mΩ/√Hz Bio-Impedance Sensor IC With Sub-1° Phase Error

IEEE journal of solid-state circuits, 2020-08, Vol.55 (8), p.2161-2173

2020

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A 0.5-μm-thick polycrystalline silicon Schottky diode with rectification ratio of 106

Applied physics letters, 2002-02, Vol.80 (8), p.1474-1476

2002

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0.6-eV bandgap In 0.69 Ga 0.31 As thermophotovoltaic devices with compositionally undulating step-graded InAsyP 1−y buffers

Chinese physics B, 2013-02, Vol.22 (2), p.26802

2013

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0.6-eV bandgap In sub(0.69)Ga sub(0.31)As thermophotovoltaic devices with compositionally undulating step-graded InAsyP sub(1-y)buffers

Chinese physics B, 2013-02, Vol.22 (2), p.026802-1-026802-5

2013

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0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-ybuffers

中国物理B：英文版, 2013-02 (2), p.385-388

季莲陆书龙江德生赵勇明谭明朱亚棋董建荣

2013

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A 0.6 V, 2.11 MHz, 62 dB SFDR active-RC filter in 0.13 mu m CMOS process

International journal of circuit theory and applications, 2010-02, Vol.38 (1), p.99-107

2010

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A 0.6 V, 2.11 MHz, 62 dB SFDR active-RC filter in 0.13µm CMOS process

International journal of circuit theory and applications, 2010-02, Vol.38 (1), p.99-107

2010

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A 0.64μm 4-Photodiode 1.28μm 50Mpixel CMOS Image Sensor with 0.98e- Temporal Noise and 20Ke- Full-Well Capacity Employing Quarter-Ring Source-Follower

2023 IEEE International Solid- State Circuits Conference (ISSCC), 2023, p.1-3

2023

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A 0.7-2.5GHz NB-loT/GNSS/BLE Hybrid PLL with PA Pulling Mitigation and Out-of-Band Phase Noise Reduction

2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA), 2022, p.74-75

2022

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A 0.7-3 GHz GaAs QPSK/QAM direct modulator

IEEE journal of solid-state circuits, 1993-12, Vol.28 (12), p.1340-1349

1993

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