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Spontaneous sparse learning for PCM-based memristor neural networks

Nature communications, 2021-01, Vol.12 (1), p.319-319, Article 319

2021

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Heterogeneously structured phase-change materials and memory

Journal of applied physics, 2021-02, Vol.129 (5)

2021

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Exploring Cycle-to-Cycle and Device-to-Device Variation Tolerance in MLC Storage-Based Neural Network Training

IEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2172-2178

2019

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Memristor devices for neural networks

Journal of physics. D, Applied physics, 2019-01, Vol.52 (2), p.23003

2019

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Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide

Materials today advances, 2022-08, Vol.15, p.100264, Article 100264

2022

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Emulation of spike-timing dependent plasticity in nano-scale phase change memory

Neurocomputing (Amsterdam), 2015-05, Vol.155, p.153-158

2015

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Ultrafast phase change and long durability of BN-incorporated GeSbTe

Journal of materials chemistry. C, Materials for optical and electronic devices, 2015-01, Vol.3 (8), p.1707-1715

2015

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Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament Controllability

Japanese Journal of Applied Physics, 2012-06, Vol.51 (6), p.06FE06-06FE06-5

2012

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Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.04DD15-04DD15-7

2011

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Investigating the Polarity Dependence of Multilevel Cell Operation in Conventional Mushroom Phase‐Change Memory Cells

Physica status solidi. PSS-RRL. Rapid research letters, 2024-10, Vol.18 (10), p.n/a

2024

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Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4S), p.4

2012

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High density PCM(phase change memory) technology

2016 International SoC Design Conference (ISOCC), 2016, p.187-188

Hongsik Jeong

2016

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Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4), p.04DD14-04DD14-5

2012

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Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament Controllability

Japanese Journal of Applied Physics, 2012-06, Vol.51 (6S), p.6

2012

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Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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Wafer‐Scale Memristor Array Based on Aligned Grain Boundaries of 2D Molybdenum Ditelluride for Application to Artificial Synapses

Advanced functional materials, 2024-04, Vol.34 (15), p.n/a

2024

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Phase-Change Behavior of Stoichiometric Ge[sub 2]Sb[sub 2]Te[sub 5] in Phase-Change Random Access Memory

Journal of the Electrochemical Society, 2007, Vol.154 (3), p.H139

2007

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Ultralow‐Power Programmable 3D Vertical Phase‐Change Memory with Heater‐All‐Around Configuration

Small methods, 2024-11, p.e2401381

2024

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Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition

Thin solid films, 2015-09, Vol.591, p.137-142

2015

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A 0.1- \mu} 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

IEEE journal of solid-state circuits, 2007-01, Vol.42 (1), p.210-218

2007

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Effect of number of laser pulses on p+/n silicon ultra-shallow junction formation during non-melt ultra-violet laser thermal annealing

Materials science in semiconductor processing, 2017-03, Vol.60, p.34-39

2017

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A 1.02-μW STT-MRAM-Based DNN ECG Arrhythmia Monitoring SoC With Leakage-Based Delay MAC Unit

IEEE solid-state circuits letters, 2020, Vol.3, p.390-393

2020

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Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cells

Microelectronics and reliability, 2016-08, Vol.63, p.284-290

2016

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A cost effective embedded DRAM integration for high density memory and high performance logic using 0.15 μm technology node and beyond

IEEE transactions on electron devices, 2000-07, Vol.47 (7), p.1499-1506

2000

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A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

IEEE journal of solid-state circuits, 2007, Vol.42 (1), p.210-218

2007

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Spontaneous sparse learning for PCM-based memristor neural networks

Heterogeneously structured phase-change materials and memory

Exploring Cycle-to-Cycle and Device-to-Device Variation Tolerance in MLC Storage-Based Neural Network Training

Memristor devices for neural networks

Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide

Emulation of spike-timing dependent plasticity in nano-scale phase change memory

Ultrafast phase change and long durability of BN-incorporated GeSbTe

Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament Controllability

Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics

Investigating the Polarity Dependence of Multilevel Cell Operation in Conventional Mushroom Phase‐Change Memory Cells

Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics

High density PCM(phase change memory) technology

Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics

Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament Controllability

Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics

Wafer‐Scale Memristor Array Based on Aligned Grain Boundaries of 2D Molybdenum Ditelluride for Application to Artificial Synapses

Phase-Change Behavior of Stoichiometric Ge[sub 2]Sb[sub 2]Te[sub 5] in Phase-Change Random Access Memory

Ultralow‐Power Programmable 3D Vertical Phase‐Change Memory with Heater‐All‐Around Configuration

Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition

A 0.1- \mu} 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Effect of number of laser pulses on p+/n silicon ultra-shallow junction formation during non-melt ultra-violet laser thermal annealing

A 1.02-μW STT-MRAM-Based DNN ECG Arrhythmia Monitoring SoC With Leakage-Based Delay MAC Unit

Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cells

A cost effective embedded DRAM integration for high density memory and high performance logic using 0.15 μm technology node and beyond

A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

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