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Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.937-948

2021

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Radioluminescence Response of Ce-, Cu-, and Gd-Doped Silica Glasses for Dosimetry of Pulsed Electron Beams

Sensors (Basel, Switzerland), 2021-11, Vol.21 (22), p.7523

2021

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Properties of Gd-Doped Sol-Gel Silica Glass Radioluminescence under Electron Beams

Sensors (Basel, Switzerland), 2022-11, Vol.22 (23), p.9248

2022

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Proton Direct Ionization in Sub-Micron Technologies: Numerical Method for RPP Parameter Extraction

IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.254-263

2022

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Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

IEEE transactions on nuclear science, 2016-08, Vol.63 (4), p.2010-2015

2016

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Failure Estimates for SiC Power MOSFETs in Space Electronics

Aerospace, 2018-09, Vol.5 (3), p.67

2018

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A simple expression for electronic stopping force of heavy ions in solids

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-08, Vol.285, p.158-161

Javanainen, Arto

2012

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Single-Event Burnout Mechanisms in SiC Power MOSFETs

IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.1951-1955

2018

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Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs

Materials science forum, 2023-05, Vol.1090, p.179-184

2023

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Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation

IEEE transactions on nuclear science, 2022-07, Vol.69 (7), p.1675-1682

2022

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Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.716-723

2021

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The Pion Single-Event Latch-Up Cross Section Enhancement: Mechanisms and Consequences for Accelerator Hardness Assurance

IEEE transactions on nuclear science, 2021-08, Vol.68 (8), p.1613-1622

2021

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12th European Conference on Accelerators in Applied Research and Technology

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2017-09, Vol.406, p.1-1

2017

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Technology Dependence of Stuck Bits and Single Event Upsets in 110, 72, and 63-nm SDRAMs

IEEE transactions on nuclear science, 2023-08, Vol.70 (8), p.1-1

2023

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Proton Direct Ionization in Sub-Micron Technologies: Test Methodologies and Modeling

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.667-677

2023

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The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1606-1613

2020

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Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.415-420

2017

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Heavy-Ion-Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

IEEE transactions on nuclear science, 2017-08, Vol.64 (8), p.2031-2037

2017

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Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1694-1701

2019

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Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.135-139

2020

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Radiation Hardness Assurance Through System-Level Testing: Risk Acceptance, Facility Requirements, Test Methodology, and Data Exploitation

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.958-969

2021

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Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.1708-1714

2018

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Mechanisms of Electron-Induced Single-Event Latchup

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.437-443

2019

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Direct Ionization Impact on Accelerator Mixed-Field Soft-Error Rate

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.345-352

2020

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Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers

IEEE transactions on nuclear science, 2018-02, Vol.65 (2), p.732-738

2018

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Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications

Radioluminescence Response of Ce-, Cu-, and Gd-Doped Silica Glasses for Dosimetry of Pulsed Electron Beams

Properties of Gd-Doped Sol-Gel Silica Glass Radioluminescence under Electron Beams

Proton Direct Ionization in Sub-Micron Technologies: Numerical Method for RPP Parameter Extraction

Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

Failure Estimates for SiC Power MOSFETs in Space Electronics

A simple expression for electronic stopping force of heavy ions in solids

Single-Event Burnout Mechanisms in SiC Power MOSFETs

Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs

Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation

Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment

The Pion Single-Event Latch-Up Cross Section Enhancement: Mechanisms and Consequences for Accelerator Hardness Assurance

12th European Conference on Accelerators in Applied Research and Technology

Technology Dependence of Stuck Bits and Single Event Upsets in 110, 72, and 63-nm SDRAMs

Proton Direct Ionization in Sub-Micron Technologies: Test Methodologies and Modeling

The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment

Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

Heavy-Ion-Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments

Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes

Radiation Hardness Assurance Through System-Level Testing: Risk Acceptance, Facility Requirements, Test Methodology, and Data Exploitation

Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

Mechanisms of Electron-Induced Single-Event Latchup

Direct Ionization Impact on Accelerator Mixed-Field Soft-Error Rate

Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers

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