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High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer

IEEE electron device letters, 2013-02, Vol.34 (2), p.175-177

2013

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Interface trap passivation for SiO2∕(0001¯) C-terminated 4H-SiC

Journal of applied physics, 2005-07, Vol.98 (1)

2005

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Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC

Solid-state electronics, 2002, Vol.46 (1), p.109-113

2002

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Thermally stable Schottky contacts on n-type GaN using ZrB2

Applied physics letters, 2006-05, Vol.88 (18)

2006

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Nitrogen passivation of deposited oxides on n 4H–SiC

Applied physics letters, 2002-11, Vol.81 (22), p.4266-4268

2002

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Structure and magnetic properties of electrodeposited Ni films on n-GaAs(001)

Journal of physics. Condensed matter, 2002-12, Vol.14 (47), p.12329-12338

2002

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Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors

Applied physics letters, 2007-06, Vol.90 (25)

2007

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Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(112̄0) 4H–SiC interface

Applied physics letters, 2004-03, Vol.84 (9), p.1498-1500

2004

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MOS Characteristics of C-Face 4H-SiC

Journal of electronic materials, 2010-05, Vol.39 (5), p.526-529

2010

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Chalcopyrite/Si Heterojunctions for Photovoltaic Applications

Journal of electronic materials, 2010-11, Vol.39 (11), p.2462-2466

2010

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Nickel Ohmic Contacts to N-Implanted (0001) 4H-SiC

Journal of electronic materials, 2010-05, Vol.39 (5), p.540-544

2010

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Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface

Materials science forum, 2006-10, Vol.527-529, p.949-954

2006

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Improved Ni Schottky Contacts on n-Type 4H-SiC Using Thermal Processing

Journal of electronic materials, 2009-06, Vol.38 (6), p.772-777

2009

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Enhanced Inversion Mobility on 4H-SiC (\hbox\overline} \hbox) Using Phosphorus and Nitrogen Interface Passivation

IEEE electron device letters, 2013-02, Vol.34 (2), p.181-183

2013

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Improved schottky contacts on n-type 4H-SiC using ZrB2 deposited at high temperatures

Journal of electronic materials, 2007-07, Vol.36 (7), p.805-811

2007

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A "Probe-Lift" MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.565-571

2008

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Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers

Materials science forum, 2009-01, Vol.615-617, p.283-286

2009

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Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers

Materials science forum, 2009-01, Vol.600-603, p.485-488

2009

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The Radiation Tolerance of Strained Si/SiGe n-MODFETs

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2251-2256

2007

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Metalorganic chemical vapor deposition- grown AIN on 6H-SiC for metal-insulator-semiconductor device applications

Journal of electronic materials, 1997-03, Vol.26 (3), p.212-216

1997

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Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs

Materials science forum, 2018-06, Vol.924, p.502-505

2018

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4H-SiC MOSFETs With Borosilicate Glass Gate Dielectric and Antimony Counter-Doping

IEEE electron device letters, 2017-10, Vol.38 (10), p.1433-1436

2017

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Nanosecond-laser annealing of zinc oxide thin-films: The effect of the laser wavelength and fluence

Thin solid films, 2024-02, Vol.791, p.140236, Article 140236

2024

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Sputter deposited ZnTe/ZnSe/ZnO heterojunctions for photovoltaic applications

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.001897-001901

2010

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10kV Trench Gate IGBTs on 4H-SiC

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005, 2005, p.303-306

2005

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High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer

Interface trap passivation for SiO2∕(0001¯) C-terminated 4H-SiC

Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC

Thermally stable Schottky contacts on n-type GaN using ZrB2

Nitrogen passivation of deposited oxides on n 4H–SiC

Structure and magnetic properties of electrodeposited Ni films on n-GaAs(001)

Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors

Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(112̄0) 4H–SiC interface

MOS Characteristics of C-Face 4H-SiC

Chalcopyrite/Si Heterojunctions for Photovoltaic Applications

Nickel Ohmic Contacts to N-Implanted (0001) 4H-SiC

Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface

Improved Ni Schottky Contacts on n-Type 4H-SiC Using Thermal Processing

Enhanced Inversion Mobility on 4H-SiC (\hbox\overline} \hbox) Using Phosphorus and Nitrogen Interface Passivation

Improved schottky contacts on n-type 4H-SiC using ZrB2 deposited at high temperatures

A "Probe-Lift" MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction

Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers

Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers

The Radiation Tolerance of Strained Si/SiGe n-MODFETs

Metalorganic chemical vapor deposition- grown AIN on 6H-SiC for metal-insulator-semiconductor device applications

Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs

4H-SiC MOSFETs With Borosilicate Glass Gate Dielectric and Antimony Counter-Doping

Nanosecond-laser annealing of zinc oxide thin-films: The effect of the laser wavelength and fluence

Sputter deposited ZnTe/ZnSe/ZnO heterojunctions for photovoltaic applications

10kV Trench Gate IGBTs on 4H-SiC

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