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Silicon ion implanted PMMA for soft electronics

Organic electronics, 2008-12, Vol.9 (6), p.1051-1060

2008

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Poole-frenkel conduction in Al/ZrO2/SiO2/Si structures

The European physical journal. B, Condensed matter physics, 2006-08, Vol.52 (4), p.453-457

2006

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Influence of high energy electron irradiation on the characteristics of polysilicon thin film transistors

The European physical journal. B, Condensed matter physics, 2006-08, Vol.52 (3), p.355-359

2006

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Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors by conduction and low frequency noise measurements

Journal of applied physics, 1997-10, Vol.82 (8), p.4095-4101

1997

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Silicon-ion-implanted PMMA with nanostructured ultrathin layers for plastic electronics

Journal of physics. Conference series, 2014-01, Vol.558 (1), p.12061-6

2014

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Poole-Frenkel conduction in Al/ZrO2 /SiO 2 /Si structures

The European physical journal. B, Condensed matter physics, 2006-08, Vol.52 (4), p.453-457

2006

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Photon emission and related hot-carrier effects in polycrystalline silicon thin-film transistors

Journal of applied physics, 1999-05, Vol.85 (9), p.6917-6919

1999

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Electrical properties of PMMA ion-implanted with low-energy Si+ beam

Journal of physics. Conference series, 2010-01, Vol.207 (1), p.012022

2010

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Conduction and low-frequency noise in high temperature processed polycrystalline silicon thin film transistors

Journal of applied physics, 1998-02, Vol.83 (3), p.1469-1475

1998

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Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors

Applied physics letters, 2000-01, Vol.76 (1), p.118-120

2000

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Gas-sensitivity of SnO2 layers treated by rapid thermal annealing process

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-06, Vol.83 (1-3), p.223-226

2001

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Hot-carrier phenomena in high temperature processed undoped-hydrogenated n-channel polysilicon thin film transistors (TFTs)

Solid-state electronics, 1999-07, Vol.43 (7), p.1259-1266

1999

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Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs)

Microelectronics and reliability, 1999, Vol.39 (6), p.885-889

1999

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Influence of MeV electron irradiation on the properties of by ion implantation hydrogenated polysilicon TFTs

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-02, Vol.243 (2), p.340-344

2006

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Electron trapping probabilities in hydrogen ion implanted silicon dioxide films thermally grown on polycrystalline silicon

Microelectronics, 2000-03, Vol.31 (3), p.207-211

2000

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Oxide field enhancement corrected time dependent dielectric breakdown of polyoxides

Microelectronics, 2000-08, Vol.31 (8), p.663-666

2000

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Time-dependent-dielectric-breakdown of hydrogen implanted polyoxides

Microelectronics, 2001-04, Vol.32 (4), p.301-304

2001

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Interface state generation during electrical stress in n-channel undoped hydrogenated polysilicon thin-film transistors

Electronics letters, 1998-11, Vol.34 (24), p.2356-2357

1998

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Voltage vs time dependent current response of MOSFET humidity gas sensor

Microelectronics, 2000-02, Vol.31 (2), p.135-138

2000

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Electrical and Polarization Properties of Nano-Sized ZrO2 on Polycrystalline Silicon

Functional Properties of Nanostructured Materials, 2006, p.355-358

2006

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Charge trapping effects in nonvolatile memory cells with HfO 2 /Al 2 O 3 nanolaminated trapping layer

Journal of physics. Conference series, 2023-01, Vol.2436 (1), p.12016

2023

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Charge trapping effects in nonvolatile memory cells with HfO2/Al2O3 nanolaminated trapping layer

Journal of physics. Conference series, 2023-01, Vol.2436 (1), p.012016

2023

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Impact of trapped charge on the breakdown phenomena in HfO 2 /Al 2 O 3 - based memory capacitors

Journal of circuits, systems, and computers, 2024-10

2024

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Effect of blocking and tunnel oxide layers on the charge trapping properties of MIS capacitors with ALD HfO 2 /Al 2 O 3 nanolaminated films

Journal of physics. Conference series, 2021-02, Vol.1762 (1), p.12038

2021

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Leakage currents in Al 2 O 3 /HfO 2 multilayer high- k stacks and their modification by post-deposition annealing steps

Journal of physics. Conference series, 2019-03, Vol.1186, p.12025

2019

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Silicon ion implanted PMMA for soft electronics

Poole-frenkel conduction in Al/ZrO2/SiO2/Si structures

Influence of high energy electron irradiation on the characteristics of polysilicon thin film transistors

Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors by conduction and low frequency noise measurements

Silicon-ion-implanted PMMA with nanostructured ultrathin layers for plastic electronics

Poole-Frenkel conduction in Al/ZrO2 /SiO 2 /Si structures

Photon emission and related hot-carrier effects in polycrystalline silicon thin-film transistors

Electrical properties of PMMA ion-implanted with low-energy Si+ beam

Conduction and low-frequency noise in high temperature processed polycrystalline silicon thin film transistors

Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors

Gas-sensitivity of SnO2 layers treated by rapid thermal annealing process

Hot-carrier phenomena in high temperature processed undoped-hydrogenated n-channel polysilicon thin film transistors (TFTs)

Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs)

Influence of MeV electron irradiation on the properties of by ion implantation hydrogenated polysilicon TFTs

Electron trapping probabilities in hydrogen ion implanted silicon dioxide films thermally grown on polycrystalline silicon

Oxide field enhancement corrected time dependent dielectric breakdown of polyoxides

Time-dependent-dielectric-breakdown of hydrogen implanted polyoxides

Interface state generation during electrical stress in n-channel undoped hydrogenated polysilicon thin-film transistors

Voltage vs time dependent current response of MOSFET humidity gas sensor

Electrical and Polarization Properties of Nano-Sized ZrO2 on Polycrystalline Silicon

Charge trapping effects in nonvolatile memory cells with HfO 2 /Al 2 O 3 nanolaminated trapping layer

Charge trapping effects in nonvolatile memory cells with HfO2/Al2O3 nanolaminated trapping layer

Impact of trapped charge on the breakdown phenomena in HfO 2 /Al 2 O 3 - based memory capacitors

Effect of blocking and tunnel oxide layers on the charge trapping properties of MIS capacitors with ALD HfO 2 /Al 2 O 3 nanolaminated films

Leakage currents in Al 2 O 3 /HfO 2 multilayer high- k stacks and their modification by post-deposition annealing steps

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