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Behavior of crystal defects in synthetic type-IIa single-crystalline diamond at high temperatures under normal pressure

Journal of crystal growth, 2017-01, Vol.458, p.27-30

2017

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Polishing mechanism and surface damage analysis of type IIa single crystal diamond processed by mechanical and chemical polishing methods

Diamond and related materials, 2016-03, Vol.63, p.80-85

2016

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Schottky barrier height and thermal stability of p-diamond (100) Schottky interfaces

Thin solid films, 2014-04, Vol.557, p.241-248

2014

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Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other in unintentionally boron-doped diamond layer

Journal of crystal growth, 2017-12, Vol.480, p.51-55

2017

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Characterization of deep defects in boron-doped CVD diamond films using transient photocapacitance method

Materials science in semiconductor processing, 2017-11, Vol.70, p.203-206

2017

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Mutual relation among lattice distortion, Hall effect property and band edge cathodoluminescence of heavily-boron-doped microwave-plasma CVD diamond films homoepitaxially grown on vicinal (001) high-pressure/high-temperature-synthesized Ib substrates

Journal of crystal growth, 2015-04, Vol.415, p.84-92

2015

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Crystalline quality distributions of the type IIa diamond substrate and the CVD diamond layer processed by chemical mechanical polishing using a SiO2 wheel

Japanese Journal of Applied Physics, 2018-10, Vol.57 (10)

2018

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Field emission characteristics of thin-metal-coated nano-sheet carbon films

Applied surface science, 2011-01, Vol.257 (7), p.2455-2460

2011

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Homoepitaxial diamond growth by high-power microwave-plasma chemical vapor deposition

Journal of crystal growth, 2004-11, Vol.271 (3), p.409-419

2004

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CVD growth and field emission characteristics of nano-structured films composed of vertically standing and mutually intersecting nano-carbon sheets

Diamond and related materials, 2007-03, Vol.16 (3), p.589-593

2007

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Hall data analysis of heavily boron-doped CVD diamond films using a model considering an impurity band well separated from valence bands

Diamond and related materials, 2011-11, Vol.20 (10), p.1357-1362

2011

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High-temperature stability of Au/p-type diamond Schottky diode

Physica status solidi. PSS-RRL. Rapid research letters, 2009-09, Vol.3 (6), p.211-213

2009

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Self-standing device-quality single-crystalline diamond films on vicinal (001) surfaces fabricated using microwave-plasma chemical-vapor-deposition method

Thin solid films, 2010-08, Vol.518 (21), p.S38-S41

2010

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Survey meter combining CVD diamond and silicon detectors for wide range of dose rates and high accumulated doses

Radiation measurements, 2012-04, Vol.47 (4), p.266-271

2012

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Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond

Applied surface science, 2008-07, Vol.254 (19), p.6273-6276

2008

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Characterization of substrate off-angle effects for high-quality homoepitaxial CVD diamond films

Diamond and related materials, 2008-04, Vol.17 (4), p.435-439

2008

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Electric Field Breakdown of Lateral Schottky Diodes of Diamond

Japanese Journal of Applied Physics, 2007-03, Vol.46 (3L), p.L196

2007

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Improved field emission characteristics of nano-structured carbon films deposited on polycrystalline CVD diamond

Diamond and related materials, 2007-02, Vol.16 (2), p.364-368

2007

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Effects of vicinal angles from (0 0 1) surface on the Boron-doping features of high-quality homoepitaxial diamond films grown by the high-power microwave plasma chemical-vapor-deposition method

Journal of crystal growth, 2007-12, Vol.309 (2), p.145-152

2007

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High-quality boron-doped homoepitaxial diamond grown by high-power microwave-plasma chemical-vapor deposition

Journal of applied physics, 2004-11, Vol.96 (10), p.5906-5908

2004

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Improvement in the crystalline quality of homoepitaxial diamond films by oxygen plasma etching of mirror-polished diamond substrates

Journal of crystal growth, 2005-11, Vol.285 (1), p.130-136

2005

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Highly sensitive UV photodetectors fabricated using high-quality single-crystalline CVD diamond films

Diamond and related materials, 2004-04, Vol.13 (4), p.858-862

2004

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Deep levels in homoepitaxial boron-doped diamond films studied by capacitance and current transient spectroscopies

Physica status solidi. A, Applications and materials science, 2008-09, Vol.205 (9), p.2179-2183

2008

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Effects of shallow traps on the reverse current of diamond Schottky diode: An electrical transient study

Physica status solidi. A, Applications and materials science, 2010-06, Vol.207 (6), p.1460-1463

2010

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Growth of high-quality homoepitaxial CVD diamond films at high growth rate

Journal of crystal growth, 2002-02, Vol.235 (1), p.287-292

2002

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Behavior of crystal defects in synthetic type-IIa single-crystalline diamond at high temperatures under normal pressure

Polishing mechanism and surface damage analysis of type IIa single crystal diamond processed by mechanical and chemical polishing methods

Schottky barrier height and thermal stability of p-diamond (100) Schottky interfaces

Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other in unintentionally boron-doped diamond layer

Characterization of deep defects in boron-doped CVD diamond films using transient photocapacitance method

Mutual relation among lattice distortion, Hall effect property and band edge cathodoluminescence of heavily-boron-doped microwave-plasma CVD diamond films homoepitaxially grown on vicinal (001) high-pressure/high-temperature-synthesized Ib substrates

Crystalline quality distributions of the type IIa diamond substrate and the CVD diamond layer processed by chemical mechanical polishing using a SiO2 wheel

Field emission characteristics of thin-metal-coated nano-sheet carbon films

Homoepitaxial diamond growth by high-power microwave-plasma chemical vapor deposition

CVD growth and field emission characteristics of nano-structured films composed of vertically standing and mutually intersecting nano-carbon sheets

Hall data analysis of heavily boron-doped CVD diamond films using a model considering an impurity band well separated from valence bands

High-temperature stability of Au/p-type diamond Schottky diode

Self-standing device-quality single-crystalline diamond films on vicinal (001) surfaces fabricated using microwave-plasma chemical-vapor-deposition method

Survey meter combining CVD diamond and silicon detectors for wide range of dose rates and high accumulated doses

Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond

Characterization of substrate off-angle effects for high-quality homoepitaxial CVD diamond films

Electric Field Breakdown of Lateral Schottky Diodes of Diamond

Improved field emission characteristics of nano-structured carbon films deposited on polycrystalline CVD diamond

Effects of vicinal angles from (0 0 1) surface on the Boron-doping features of high-quality homoepitaxial diamond films grown by the high-power microwave plasma chemical-vapor-deposition method

High-quality boron-doped homoepitaxial diamond grown by high-power microwave-plasma chemical-vapor deposition

Improvement in the crystalline quality of homoepitaxial diamond films by oxygen plasma etching of mirror-polished diamond substrates

Highly sensitive UV photodetectors fabricated using high-quality single-crystalline CVD diamond films

Deep levels in homoepitaxial boron-doped diamond films studied by capacitance and current transient spectroscopies

Effects of shallow traps on the reverse current of diamond Schottky diode: An electrical transient study

Growth of high-quality homoepitaxial CVD diamond films at high growth rate

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