UB Paderborn / Katalog / Suche / in CDI

2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1303-1307

2018

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Degradation of the Reset Switching During Endurance Testing of a Phase-Change Line Cell

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.354-358

2009

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Breakdown Enhancement in Silicon Nanowire p-n Junctions

Nano letters, 2007-04, Vol.7 (4), p.896-899

2007

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A Novel Method for Extracting the Temperature-Dependent Crystal-Growth Parameters in Fast-Growth Phase-Change Memories

IEEE electron device letters, 2010-11, Vol.31 (11), p.1287-1289

2010

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Transient Characteristics of the Reset Programming of a Phase-Change Line Cell and the Effect of the Reset Parameters on the Obtained State

IEEE transactions on electron devices, 2009-07, Vol.56 (7), p.1499-1506

2009

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Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.73-77

2017

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Thermal disturbance and its impact on reliability of phase-change memory studied by the micro-thermal stage

2010 IEEE International Reliability Physics Symposium, 2010, p.99-103

2010

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Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells

Journal of applied physics, 2015-02, Vol.117 (6)

2015

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Evolution of cell resistance, threshold voltage and crystallization temperature during cycling of line-cell phase-change random access memory

Journal of applied physics, 2011-07, Vol.110 (2), p.024505-024505-11

2011

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A new analytical model for the thermal resistance of deep-trench bipolar transistors

IEEE transactions on electron devices, 2006-06, Vol.53 (6), p.1379-1388

2006

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The influence of lateral device scaling and airgap deep trench isolation on the reliability performance of 200 GHz SiGe:C HBTs

Semiconductor science and technology, 2007-01, Vol.22 (1), p.S9-S12

2007

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A new recombination model for device simulation including tunneling

IEEE transactions on electron devices, 1992-02, Vol.39 (2), p.331-338

1992

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Simultaneous extraction of the base and thermal resistances of bipolar transistors

IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1887-1892

2005

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A Quantum-Mechanical View on the Capacitance of a Silicon p-n Junction

IEEE electron device letters, 2007-04, Vol.28 (4), p.312-314

2007

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RF figures-of-merit for process optimization

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2121-2128

2004

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The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells

Journal of applied physics, 2012-10, Vol.112 (8)

2012

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A new analytical diode model including tunneling and avalanche breakdown

IEEE transactions on electron devices, 1992-09, Vol.39 (9), p.2090-2098

1992

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Layout and spacer optimization for high-frequency low-noise performance in HBT's

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010, p.53-56

2010

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Impact of the backside potential on the current collapse of GaN SBDs and HEMTs

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.365-368

2015

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Crystallization properties and their drift dependence in phase-change memory studied with a micro-thermal stage

Journal of applied physics, 2011-12, Vol.110 (11), p.114520-114520-6

2011

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Quantitative characterization of the trapped charge profile in GaN HEMTs by sense nodes in the drain-extension region

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.27-30

2016

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Analyses and design of bias circuits tolerating output voltages above BVCEO

IEEE journal of solid-state circuits, 2005-10, Vol.40 (10), p.2008-2018

2005

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Quantum-mechanical effects on the carrier distribution around a semiconductor p - n junction

Physical review. B, Condensed matter and materials physics, 2006-06, Vol.73 (23), Article 233309

2006

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A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cell

Solid-state electronics, 2011-04, Vol.58 (1), p.17-22

2011

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A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cell: Special Issue Devoted to the 2nd International Memory Workshop (IMW 2010)

Solid-state electronics, 2011, Vol.58 (1), p.17-22

2011

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2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal

Degradation of the Reset Switching During Endurance Testing of a Phase-Change Line Cell

Breakdown Enhancement in Silicon Nanowire p-n Junctions

A Novel Method for Extracting the Temperature-Dependent Crystal-Growth Parameters in Fast-Growth Phase-Change Memories

Transient Characteristics of the Reset Programming of a Phase-Change Line Cell and the Effect of the Reset Parameters on the Obtained State

Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation

Thermal disturbance and its impact on reliability of phase-change memory studied by the micro-thermal stage

Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells

Evolution of cell resistance, threshold voltage and crystallization temperature during cycling of line-cell phase-change random access memory

A new analytical model for the thermal resistance of deep-trench bipolar transistors

The influence of lateral device scaling and airgap deep trench isolation on the reliability performance of 200 GHz SiGe:C HBTs

A new recombination model for device simulation including tunneling

Simultaneous extraction of the base and thermal resistances of bipolar transistors

A Quantum-Mechanical View on the Capacitance of a Silicon p-n Junction

RF figures-of-merit for process optimization

The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells

A new analytical diode model including tunneling and avalanche breakdown

Layout and spacer optimization for high-frequency low-noise performance in HBT's

Impact of the backside potential on the current collapse of GaN SBDs and HEMTs

Crystallization properties and their drift dependence in phase-change memory studied with a micro-thermal stage

Quantitative characterization of the trapped charge profile in GaN HEMTs by sense nodes in the drain-extension region

Analyses and design of bias circuits tolerating output voltages above BVCEO

Quantum-mechanical effects on the carrier distribution around a semiconductor p - n junction

A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cell

A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cell: Special Issue Devoted to the 2nd International Memory Workshop (IMW 2010)

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