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Coherent singlet-triplet oscillations in a silicon-based double quantum dot

Nature (London), 2012-01, Vol.481 (7381), p.344-347

2012

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Separation of anthraquinone sulphonic acids by ion-pair liquid chromatography

Journal of Chromatography A, 1985, Vol.319 (3), p.319-330

Hunter, A.T.

1985

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An Initial Investigation of Nitrogen Doping of Wide-Bandgap HgCdTe During Molecular-Beam Epitaxy Using Ar/N Plasmas

Journal of electronic materials, 2008-09, Vol.37 (9), p.1420-1425

2008

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Recent advances in Ga1−xInxSb/InAs superlattice IR detector materials

Applied surface science, 1998-01, Vol.123-124, p.395-399

1998

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MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55 μm photodetection

Journal of crystal growth, 1999, Vol.201, p.980-984

1999

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Near Band-Edge and Deep-Level Related Luminescence Images near Dislocations in In-Alloyed Czochralski GaAs

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 1987-01, Vol.48, p.1-8

Hunter, A.T.

1987

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Materials characterization of Si 1− x− yGe xC y/Si superlattice structures

Thin solid films, 1997, Vol.308, p.358-362

1997

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Modeling of finite size effects in resonant tunneling diodes

Physica. E, Low-dimensional systems & nanostructures, 1998-07, Vol.2 (1), p.507-510

1998

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Optimization of sb-heterostructure diode for low noise detection

63rd Device Research Conference Digest, 2005. DRC '05, 2005, Vol.1, p.263-264

2005

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Improved growth morphology of Si–Ge–C heterostructures through the use of Sb surfactant-assisted molecular beam epitaxy

Thin solid films, 1997-02, Vol.294 (1), p.105-111

1997

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Control of composition and crystallinity in the molecular beam epitaxy of strain-compensated Si1 − − Ge C alloys on Si

Journal of crystal growth, 1997-05, Vol.175-176, p.486-492

1997

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Control of composition and crystallinity in the molecular beam epitaxy of strain-compensated Si1 − x − yGexCy alloys on Si

Journal of crystal growth, 1997-05, Vol.175-176, p.486-492

1997

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Materials characterization of Si1−x−yGexCy/Si superlattice structures

Thin solid films, 1997-10, Vol.308-309, p.358-362

1997

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Oxygen tracer diffusion through BaF sub 2 and MgO overcoats on YBa sub 2 Cu sub 3 O sub 7 minus. Delta

Applied physics letters, 1991-08, Vol.59:6

1991

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Commercial CVD diamond films: Material properties and their related effects on microwave characteristics

Diamond and related materials, 1998-02, Vol.7 (2), p.585-588

1998

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The use and mechanism of reverse phase ion-pair liquid chromatography for the separation of sulphonic acid derivatives of anthraquinone

Hunter, A.T

1982

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Microstructural Characterization of Heteroepitaxial SiGeC Alloys

Microscopy and microanalysis, 1998-07, Vol.4 (S2), p.658-659

1998

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Comparison of the effects of different lateral boundary conditions on transport in resonant tunneling diodes

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.581-584

1997

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Advances in the development of graded injector visible light emitters

Journal of crystal growth, 1994-04, Vol.138 (1), p.692-696

1994

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Photoluminescence of HgTe-CdTe superlattices: comparison of theory and experiment

Journal of applied physics, 1988-07, Vol.64 (1), p.283-286

1988

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Growth and characterization of GaAs alloyed with In and P

Journal of crystal growth, 1987-11, Vol.85 (1), p.116-123

1987

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Low-dislocation indium-alloyed GaAs

Journal of crystal growth, 1984-01, Vol.70 (1), p.185-190

1984

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Laser patterning of YBaCuO weak link bridges

IEEE transactions on magnetics, 1989-03, Vol.25 (2), p.935-938

1989

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VIB-4 Substrate effects on the performance of MESFET's fabricated on undoped LEC GaAs and In-alloyed GaAs

IEEE transactions on electron devices, 1984-12, Vol.31 (12), p.1987-1987

1984

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Infrared photoluminescence spectra from HgTe-CdTe superlattices

Surface science, 1986-08, Vol.174 (1), p.541-542

1986

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Coherent singlet-triplet oscillations in a silicon-based double quantum dot

Separation of anthraquinone sulphonic acids by ion-pair liquid chromatography

An Initial Investigation of Nitrogen Doping of Wide-Bandgap HgCdTe During Molecular-Beam Epitaxy Using Ar/N Plasmas

Recent advances in Ga1−xInxSb/InAs superlattice IR detector materials

MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55 μm photodetection

Near Band-Edge and Deep-Level Related Luminescence Images near Dislocations in In-Alloyed Czochralski GaAs

Materials characterization of Si 1− x− yGe xC y/Si superlattice structures

Modeling of finite size effects in resonant tunneling diodes

Optimization of sb-heterostructure diode for low noise detection

Improved growth morphology of Si–Ge–C heterostructures through the use of Sb surfactant-assisted molecular beam epitaxy

Control of composition and crystallinity in the molecular beam epitaxy of strain-compensated Si1 − − Ge C alloys on Si

Control of composition and crystallinity in the molecular beam epitaxy of strain-compensated Si1 − x − yGexCy alloys on Si

Materials characterization of Si1−x−yGexCy/Si superlattice structures

Oxygen tracer diffusion through BaF sub 2 and MgO overcoats on YBa sub 2 Cu sub 3 O sub 7 minus. Delta

Commercial CVD diamond films: Material properties and their related effects on microwave characteristics

The use and mechanism of reverse phase ion-pair liquid chromatography for the separation of sulphonic acid derivatives of anthraquinone

Microstructural Characterization of Heteroepitaxial SiGeC Alloys

Comparison of the effects of different lateral boundary conditions on transport in resonant tunneling diodes

Advances in the development of graded injector visible light emitters

Photoluminescence of HgTe-CdTe superlattices: comparison of theory and experiment

Growth and characterization of GaAs alloyed with In and P

Low-dislocation indium-alloyed GaAs

Laser patterning of YBaCuO weak link bridges

VIB-4 Substrate effects on the performance of MESFET's fabricated on undoped LEC GaAs and In-alloyed GaAs

Infrared photoluminescence spectra from HgTe-CdTe superlattices

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