UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 46

Sortiert nach

3D cross-point phase-change memory for storage-class memory

Journal of physics. D, Applied physics, 2019-11, Vol.52 (47), p.473002

2019

Link zum Volltext

Verfügbarkeit prüfen

Recent Progress in Phase-Change Memory Technology

IEEE journal on emerging and selected topics in circuits and systems, 2016-06, Vol.6 (2), p.146-162

2016

Link zum Volltext
IEEE_Xplore

Training a Probabilistic Graphical Model With Resistive Switching Electronic Synapses

IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.5004-5011

2016

Link zum Volltext
IEEE_Xplore

Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic Computing

IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1289-1295

2019

Link zum Volltext
IEEE_Xplore

A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.5172-5179

2018

Link zum Volltext
IEEE_Xplore

ReRAM-Based Pseudo-True Random Number Generator With High Throughput and Unpredictability Characteristics

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1593-1597

2021

Link zum Volltext
IEEE_Xplore

Analog Coding in Emerging Memory Systems

Scientific reports, 2020-04, Vol.10 (1), p.6831-6831, Article 6831

2020

Link zum Volltext

Verfügbarkeit prüfen

A Retention-Aware Multilevel Cell Phase Change Memory Program Evaluation Metric

IEEE electron device letters, 2016-11, Vol.37 (11), p.1422-1425

2016

Link zum Volltext
IEEE_Xplore

Driving Device Comparison for Phase-Change Memory

IEEE transactions on electron devices, 2011-03, Vol.58 (3), p.664-671

2011

Link zum Volltext
IEEE_Xplore

Low RESET Current Mushroom‐Cell Phase‐Change Memory Using Fiber‐Textured Homostructure GeSbTe on Highly Oriented Seed Layer

Physica status solidi. PSS-RRL. Rapid research letters, 2024-06

2024

Link zum Volltext

Verfügbarkeit prüfen

Author Correction: Analog Coding in Emerging Memory Systems

Scientific reports, 2020-08, Vol.10 (1), p.13404-13404, Article 13404

2020

Link zum Volltext

Verfügbarkeit prüfen

Impacts and solutions of nonvolatile-memory-induced weight error in the computing-in-memory neural network system

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGB15

2020

Link zum Volltext

Verfügbarkeit prüfen

An asymmetric two-side program with one-side read (ATPOR) device for MultiBit per cell MLC nitride-trapping flash memories

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2648-2653

2005

Link zum Volltext
IEEE_Xplore

Error free physically unclonable function with programmed resistive random access memory using reliable resistance states by specific identification-generation method

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

Link zum Volltext

Verfügbarkeit prüfen

A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100\times for Storage Class Memory Applications

IEEE journal of solid-state circuits, 2017-01, Vol.52 (1), p.218-228

2017

Link zum Volltext
IEEE_Xplore

Sidewall electrode TiOx/TiOxNy resistive random access memory with excellent memory window control and reliability using plasma oxidation and a novel degradation-detecting writing algorithm

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4S)

2017

Link zum Volltext

Verfügbarkeit prüfen

A single-sided PHINES SONOS memory featuring high-speed and low-power applications

IEEE electron device letters, 2006-02, Vol.27 (2), p.127-129

2006

Link zum Volltext
IEEE_Xplore

The impact of melting during reset operation on the reliability of phase change memory

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.6C.2.1-6C.2.6

2012

Link zum Volltext
IEEE_Xplore

Investigation of maximum current sensing window for two-side operation, four-bit/cell MLC nitride-trapping nonvolatile flash memories

IEEE electron device letters, 2004-12, Vol.25 (12), p.795-797

2004

Link zum Volltext
IEEE_Xplore

Low-temperature capacitor-over-interconnect (COI) Modular FeRAM for SOC application

IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.920-926

2004

Link zum Volltext
IEEE_Xplore

A novel high performance WOx ReRAM based on thermally-induced SET operation

2013 Symposium on VLSI Technology, 2013, p.T100-T101

2013

Link zum Volltext
IEEE_Xplore

A Double-Data- Rate 2 (DDR2) Interface Phase-Change Memory with 533MB/s Read -Write Data Rate and 37.5ns Access Latency for Memory-Type Storage Class Memory Applications

2016 IEEE 8th International Memory Workshop (IMW), 2016, p.1-5

2016

Link zum Volltext

Verfügbarkeit prüfen

In-Memory-Searching Architecture Based on 3D-NAND Technology with Ultra-high Parallelism

2020 IEEE International Electron Devices Meeting (IEDM), 2020, p.36.1.1-36.1.4

2020

Link zum Volltext
IEEE_Xplore

Excellent resistance variability control of WOx ReRAM by a smart writing algorithm

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2016, p.1-2

2016

Link zum Volltext

Verfügbarkeit prüfen

A Novel Voltage-Accumulation Vector-Matrix Multiplication Architecture Using Resistor-shunted Floating Gate Flash Memory Device for Low-power and High-density Neural Network Applications

2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.2.4.1-2.4.4

2018

Link zum Volltext
IEEE_Xplore

1 – 25 von 46

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(27)
Mit Volltextzugriff
(44)

Publikationsform

Sprache

Englisch
(46)
Japanisch
(3)

Erscheinungsjahr

n.n

Thema

Science & Technology
(29)
Technology
(21)
Engineering
(20)
Engineering, Electrical & Electronic
(20)
Physical Sciences
(18)
Physics
(18)
Physics, Applied
(16)
Phase Change Materials
(13)
Resistance
(13)
Phase Change Memory
(11)
Electrodes
(7)
Nonvolatile Memory
(7)
Programming
(7)
Random Access Memory
(7)
Arrays
(6)
Computer Architecture
(6)
Devices
(6)
Switches
(6)
Endurance
(5)
Flash Memory
(5)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

3D cross-point phase-change memory for storage-class memory

Recent Progress in Phase-Change Memory Technology

Training a Probabilistic Graphical Model With Resistive Switching Electronic Synapses

Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic Computing

A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory

ReRAM-Based Pseudo-True Random Number Generator With High Throughput and Unpredictability Characteristics

Analog Coding in Emerging Memory Systems

A Retention-Aware Multilevel Cell Phase Change Memory Program Evaluation Metric

Driving Device Comparison for Phase-Change Memory

Low RESET Current Mushroom‐Cell Phase‐Change Memory Using Fiber‐Textured Homostructure GeSbTe on Highly Oriented Seed Layer

Author Correction: Analog Coding in Emerging Memory Systems

Impacts and solutions of nonvolatile-memory-induced weight error in the computing-in-memory neural network system

An asymmetric two-side program with one-side read (ATPOR) device for MultiBit per cell MLC nitride-trapping flash memories

Error free physically unclonable function with programmed resistive random access memory using reliable resistance states by specific identification-generation method

A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100\times for Storage Class Memory Applications

Sidewall electrode TiOx/TiOxNy resistive random access memory with excellent memory window control and reliability using plasma oxidation and a novel degradation-detecting writing algorithm

A single-sided PHINES SONOS memory featuring high-speed and low-power applications

The impact of melting during reset operation on the reliability of phase change memory

Investigation of maximum current sensing window for two-side operation, four-bit/cell MLC nitride-trapping nonvolatile flash memories

Low-temperature capacitor-over-interconnect (COI) Modular FeRAM for SOC application

A novel high performance WOx ReRAM based on thermally-induced SET operation

A Double-Data- Rate 2 (DDR2) Interface Phase-Change Memory with 533MB/s Read -Write Data Rate and 37.5ns Access Latency for Memory-Type Storage Class Memory Applications

In-Memory-Searching Architecture Based on 3D-NAND Technology with Ultra-high Parallelism

Excellent resistance variability control of WOx ReRAM by a smart writing algorithm

A Novel Voltage-Accumulation Vector-Matrix Multiplication Architecture Using Resistor-shunted Floating Gate Flash Memory Device for Low-power and High-density Neural Network Applications

Suchergebnisse filtern