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A new Fourier transform photo-modulation spectroscopic technique for narrow band-gap materials in the mid- to far-infra-red

Physica status solidi. A, Applications and materials science, 2005-05, Vol.202 (7), p.1233-1243

2005

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The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

Journal of applied physics, 2012-06, Vol.111 (11)

2012

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Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications

Applied physics letters, 2012-11, Vol.101 (22)

2012

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Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures

AIP Conference Proceedings, 2013, Vol.1566 (1), p.489

2013

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Experimental and modelling study of InGaBiAs InP alloys with up to 5.8% Bi, and with Δso > Eg

Semiconductor science and technology, 2015-09, Vol.30 (9)

2015

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An enhanced model for the modulated reflectance spectra of vertical-cavity surface-emitting laser structures

Physica status solidi. A, Applications and materials science, 2007-02, Vol.204 (2), p.331-342

2007

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Analysis of reflectance and modulation spectroscopic lineshapes in optoelectronic device structures

Applied surface science, 2006-10, Vol.253 (1), p.70-79

2006

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A study of the low-energy interference oscillations in photoreflectance of GaAsSb/GaAs quantum well structures

Physica status solidi. A, Applications and materials science, 2005-05, Vol.202 (7), p.1244-1254

2005

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Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

Applied physics letters, 2005-10, Vol.87 (18), p.182114-182114-3

2005

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An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques

Journal of applied physics, 2008-10, Vol.104 (8), p.083109-083109-8

2008

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Characterisation of a 760 nm vertical-cavity surface-emitting laser structure by reflectance and photomodulated reflectance

Physica status solidi. A, Applications and materials science, 2005-05, Vol.202 (7), p.1217-1226

2005

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Estimating Critical-Point Parameters of Modulated Reflectance Spectra

Physica status solidi. B. Basic research, 1995-06, Vol.189 (2), p.531-542

Hosea, T. J. C.

1995

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Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance

Thin solid films, 2008-09, Vol.516 (22), p.8049-8058

2008

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Fourier transform infrared surface photovoltage spectroscopy for the investigation of mid-infrared semiconductor lasers

Physica status solidi. A, Applications and materials science, 2009-05, Vol.206 (5), p.808-815

2009

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Estimating Critical-Point Parameters from Kramers-Kronig Transformations of Modulated Reflectance Spectra

Physica status solidi. B. Basic research, 1994-03, Vol.182 (1), p.K43-K47

Hosea, T. J. C.

1994

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Room temperature characterisation of InGaAlAs quantum well laser structures using electro-modulated reflectance and surface photovoltage spectroscopy

Physica status solidi. A, Applications and materials science, 2009-05, Vol.206 (5), p.796-802

2009

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Room temperature spectroscopic characterization of mid-infrared GaInSb quantum-well laser structures

Semiconductor science and technology, 2010-03, Vol.25 (3), p.035005-035005

2010

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Analysis of phase shifts due to etching in photoreflectance spectra of a GaAs/AlGaAs single-quantum well structure

Journal of applied physics, 1995, Vol.77 (6), p.2672-2678

1995

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Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As)

Semiconductor science and technology, 2002-08, Vol.17 (8), p.830-842

2002

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A photomodulated reflectance study of InAs/GaAs self-assembled quantum dots

Applied physics letters, 1998-11, Vol.73 (22), p.3268-3270

1998

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Characterization of vertical-cavity surface-emitting laser structures by modulation spectroscopy: A status report

Physica status solidi. A, Applications and materials science, 2005-05, Vol.202 (7), p.1208-1216

2005

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Characterisation of VCSEL and RCLED Structures Using Modulation Spectroscopy

Physica scripta, 2004-01, Vol.2004, p.227-230

Hosea, T J C

2004

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Characterization of vertical-cavity surface-emitting laser structures by modulation spectroscopy: A status report

Physica status solidi. A, Applications and materials science, 2005-05, Vol.202 (7), p.1185-1185

2005

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Airy function analysis of Franz–Keldysh oscillations in the photoreflectance spectra of In1−xGaxAsyP1−y layers

Journal of applied physics, 1997-09, Vol.82 (6), p.3092-3099

1997

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Accurate methods for study of light emission from quantum wells confined in a microcavity

IEEE journal of quantum electronics, 2002-08, Vol.38 (8), p.1031-1038

2002

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A new Fourier transform photo-modulation spectroscopic technique for narrow band-gap materials in the mid- to far-infra-red

The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures

Experimental and modelling study of InGaBiAs InP alloys with up to 5.8% Bi, and with Δso > Eg

An enhanced model for the modulated reflectance spectra of vertical-cavity surface-emitting laser structures

Analysis of reflectance and modulation spectroscopic lineshapes in optoelectronic device structures

A study of the low-energy interference oscillations in photoreflectance of GaAsSb/GaAs quantum well structures

Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques

Characterisation of a 760 nm vertical-cavity surface-emitting laser structure by reflectance and photomodulated reflectance

Estimating Critical-Point Parameters of Modulated Reflectance Spectra

Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance

Fourier transform infrared surface photovoltage spectroscopy for the investigation of mid-infrared semiconductor lasers

Estimating Critical-Point Parameters from Kramers-Kronig Transformations of Modulated Reflectance Spectra

Room temperature characterisation of InGaAlAs quantum well laser structures using electro-modulated reflectance and surface photovoltage spectroscopy

Room temperature spectroscopic characterization of mid-infrared GaInSb quantum-well laser structures

Analysis of phase shifts due to etching in photoreflectance spectra of a GaAs/AlGaAs single-quantum well structure

Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As)

A photomodulated reflectance study of InAs/GaAs self-assembled quantum dots

Characterization of vertical-cavity surface-emitting laser structures by modulation spectroscopy: A status report

Characterisation of VCSEL and RCLED Structures Using Modulation Spectroscopy

Characterization of vertical-cavity surface-emitting laser structures by modulation spectroscopy: A status report

Airy function analysis of Franz–Keldysh oscillations in the photoreflectance spectra of In1−xGaxAsyP1−y layers

Accurate methods for study of light emission from quantum wells confined in a microcavity

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