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Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure

Thin solid films, 2006-10, Vol.515 (2), p.768-770

2006

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UV laser diode with 350.9-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology

IEEE journal of selected topics in quantum electronics, 2005-09, Vol.11 (5), p.1069-1073

2005

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IEEE_Xplore

Light extraction process in moth-eye structure

Physica status solidi. C, 2006-06, Vol.3 (6), p.2165-2168

2006

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GaN growth on (30 8) 4H-SiC substrate for reduction of internal polarization

Physica status solidi. C, 2005-05, Vol.2 (7), p.2121-2124

2005

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Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate

Physica. B, Condensed matter, 2006-04, Vol.376, p.491-495

2006

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350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

Japanese Journal of Applied Physics, 2004-04, Vol.43 (4A), p.L499

2004

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Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate

Japanese Journal of Applied Physics, 2005-01, Vol.44 (12L), p.L1516

2005

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High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure

Japanese Journal of Applied Physics, 2005-10, Vol.44 (10R), p.7414

2005

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Anisotropically Biaxial Strain in a-Plane AlGaN on GaN Grown on r-Plane Sapphire

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4R), p.2509

2006

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350.9 nm UV laser diode grown on sapphire substrate

Physica status solidi. C, 2005-01, Vol.2 (7), p.2828-2831

2005

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Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE

Journal of crystal growth, 2004-12, Vol.272 (1), p.270-273

2004

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High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE

Journal of crystal growth, 2004-12, Vol.272 (1-4), p.377-380

2004

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Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate

Physica. B, Condensed matter, 2006, Vol.376-77, p.491-495

2006

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UV laser diode with 350.9 nm-lasing wavelength grown on AlGaN template

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest, 2004, p.67-68

2004

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IEEE_Xplore

X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN

Physica Status Solidi (b), 2006-06, Vol.243 (7), p.1524-1528

2006

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High-quality Al 0.12Ga 0.88N film with low dislocation density grown on facet-controlled Al 0.12Ga 0.88N by MOVPE

Journal of crystal growth, 2004, Vol.272 (1), p.377-380

2004

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Laser diode of 350.9nm wavelength grown on sapphire substrate by MOVPE

Journal of crystal growth, 2004-12, Vol.272 (1-4), p.270-273

2004

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Highly p-Type a-GaN Grown on r-Plane Sapphire Substrate

MRS proceedings, 2005, Vol.892, Article 0892-FF17-06

2005

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Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate

MRS proceedings, 2005, Vol.892, Article 0892-FF07-08-EE05-08

2005

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X-ray diffraction reciprocal lattice space mapping of α-plane AlGaN on GaN

Physica status solidi. B. Basic research, 2006, Vol.243 (7), p.1524-1528

2006

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Moth-Eye Light-Emitting Diodes

MRS proceedings, 2004, Vol.831, Article E1.9

2004

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Group III nitrides grown on 4H-SiC (3038) substrate by metal-organic vapor phase epitaxy

MRS proceedings, 2004, Vol.831, Article E11.31

2004

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Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure

UV laser diode with 350.9-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology

Light extraction process in moth-eye structure

GaN growth on (30 8) 4H-SiC substrate for reduction of internal polarization

Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate

350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate

High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure

Anisotropically Biaxial Strain in a-Plane AlGaN on GaN Grown on r-Plane Sapphire

350.9 nm UV laser diode grown on sapphire substrate

Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE

High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE

Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate

UV laser diode with 350.9 nm-lasing wavelength grown on AlGaN template

X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN

High-quality Al 0.12Ga 0.88N film with low dislocation density grown on facet-controlled Al 0.12Ga 0.88N by MOVPE

Laser diode of 350.9nm wavelength grown on sapphire substrate by MOVPE

Highly p-Type a-GaN Grown on r-Plane Sapphire Substrate

Characterization of a-plane AlGaN/GaN heterostructure grown on r-plane sapphire substrate

X-ray diffraction reciprocal lattice space mapping of α-plane AlGaN on GaN

Moth-Eye Light-Emitting Diodes

Group III nitrides grown on 4H-SiC (3038) substrate by metal-organic vapor phase epitaxy

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