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Array of Two UV-Wavelength Detector Types

IEEE transactions on electron devices, 2010-06, Vol.57 (6), p.1224-1229

2010

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Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8

Journal of crystal growth, 2009, Vol.311 (2), p.238-243

2009

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Plasmonically enhanced emission from a group-III nitride nanowire emitter

Nanotechnology, 2007-07, Vol.18 (26), p.265401-265401 (4)

2007

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Investigation of three-step epilayer growth approach of GaN films to minimize compensation

Journal of electronic materials, 2005-09, Vol.34 (9), p.1187-1192

2005

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MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates

Journal of crystal growth, 2006-01, Vol.287 (2), p.610-614

2006

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High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates

Applied physics letters, 2005-12, Vol.87 (24)

2005

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Infrared dielectric function of wurtzite aluminum nitride

Applied physics letters, 2005-04, Vol.86 (14), p.141912-141912-3

2005

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Characteristics of in situ Mg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps

Semiconductor science and technology, 2007-10, Vol.22 (10), p.1151-1156

2007

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Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

Journal of electronic materials, 2010-06, Vol.39 (6), p.743-746

2010

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Experimental study of plasmonically enhanced GaN nanowire light emitters

Physica status solidi. A, Applications and materials science, 2008-02, Vol.205 (2), p.378-382

2008

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Rare-earth chloride seeded growth of GaN nano- and micro-crystals

Applied surface science, 2007-05, Vol.253 (14), p.6157-6161

2007

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Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

Journal of crystal growth, 2007-06, Vol.304 (1), p.103-107

2007

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Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces

Applied physics letters, 2005-01, Vol.86 (2), p.021902-021902-3

2005

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Impact of candidate sire number and sire relatedness on DNA polymorphism-based measures of exclusion probability and probability of unambiguous parentage

Animal genetics, 2004-06, Vol.35 (3), p.220-226

2004

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Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging

Scripta materialia, 2009-10, Vol.61 (8), p.773-776

2009

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Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging

Applied physics letters, 2007-08, Vol.91 (9), p.094106-094106-3

2007

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Subsurface movement of zinc from contaminated dredge spoils at a periodically flooded site

Environmental earth sciences, 2003-12, Vol.45 (1), p.23-34

2003

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Formation of high Tc superconducting films by organometallic chemical vapor deposition

Applied physics letters, 1988-05, Vol.52 (20), p.1743-1745

1988

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Oxidation-reduction capacities of aquifer solids

Environmental science & technology, 1991-09, Vol.25 (9), p.1565-1572

1991

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Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free 4H-SiC mesas

Applied physics letters, 2006-06, Vol.88 (26)

2006

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Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC

Applied physics letters, 2007-07, Vol.91 (1)

2007

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Characterization of erbium chloride seeded gallium nitride nanocrystals

Thin solid films, 2008-12, Vol.517 (3), p.1111-1114

2008

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Arsenic in glacial aquifers: sources and geochemical controls

Ground water, 2005-07, Vol.43 (4), p.500-510

2005

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Chemical vapor deposition experiments using new fluorinated acetylacetonates of calcium, strontium, and barium

Inorganic chemistry, 1989-07, Vol.28 (14), p.2799-2803

1989

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Infrared reflectance evaluation of chemically vapor deposited β-SiC films grown on Si substrates

Journal of applied physics, 1986-08, Vol.60 (4), p.1479-1485

1986

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Array of Two UV-Wavelength Detector Types

Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8

Plasmonically enhanced emission from a group-III nitride nanowire emitter

Investigation of three-step epilayer growth approach of GaN films to minimize compensation

MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates

High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates

Infrared dielectric function of wurtzite aluminum nitride

Characteristics of in situ Mg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps

Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

Experimental study of plasmonically enhanced GaN nanowire light emitters

Rare-earth chloride seeded growth of GaN nano- and micro-crystals

Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces

Impact of candidate sire number and sire relatedness on DNA polymorphism-based measures of exclusion probability and probability of unambiguous parentage

Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging

Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging

Subsurface movement of zinc from contaminated dredge spoils at a periodically flooded site

Formation of high Tc superconducting films by organometallic chemical vapor deposition

Oxidation-reduction capacities of aquifer solids

Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free 4H-SiC mesas

Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC

Characterization of erbium chloride seeded gallium nitride nanocrystals

Arsenic in glacial aquifers: sources and geochemical controls

Chemical vapor deposition experiments using new fluorinated acetylacetonates of calcium, strontium, and barium

Infrared reflectance evaluation of chemically vapor deposited β-SiC films grown on Si substrates

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