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Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8

Journal of crystal growth, 2009, Vol.311 (2), p.238-243

2009

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Array of Two UV-Wavelength Detector Types

IEEE transactions on electron devices, 2010-06, Vol.57 (6), p.1224-1229

2010

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Plasmonically enhanced emission from a group-III nitride nanowire emitter

Nanotechnology, 2007-07, Vol.18 (26), p.265401-265401 (4)

2007

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MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates

Journal of crystal growth, 2006-01, Vol.287 (2), p.610-614

2006

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Infrared dielectric function of wurtzite aluminum nitride

Applied physics letters, 2005-04, Vol.86 (14), p.141912-141912-3

2005

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Investigation of three-step epilayer growth approach of GaN films to minimize compensation

Journal of electronic materials, 2005-09, Vol.34 (9), p.1187-1192

2005

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High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates

Applied physics letters, 2005-12, Vol.87 (24)

2005

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Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

Journal of electronic materials, 2010-06, Vol.39 (6), p.743-746

2010

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Characteristics of in situ Mg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps

Semiconductor science and technology, 2007-10, Vol.22 (10), p.1151-1156

2007

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Experimental study of plasmonically enhanced GaN nanowire light emitters

Physica status solidi. A, Applications and materials science, 2008-02, Vol.205 (2), p.378-382

2008

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Rare-earth chloride seeded growth of GaN nano- and micro-crystals

Applied surface science, 2007-05, Vol.253 (14), p.6157-6161

2007

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Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces

Applied physics letters, 2005-01, Vol.86 (2), p.021902-021902-3

2005

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Design of Gallium Nitride Resonant Cavity Light-Emitting Diodes on Si Substrates

Advanced materials (Weinheim), 2008-01, Vol.20 (1), p.115-118

2008

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Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging

Scripta materialia, 2009-10, Vol.61 (8), p.773-776

2009

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Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

Journal of crystal growth, 2007-06, Vol.304 (1), p.103-107

2007

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Impact of candidate sire number and sire relatedness on DNA polymorphism-based measures of exclusion probability and probability of unambiguous parentage

Animal genetics, 2004-06, Vol.35 (3), p.220-226

2004

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Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging

Applied physics letters, 2007-08, Vol.91 (9), p.094106-094106-3

2007

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Oxidation-reduction capacities of aquifer solids

Environmental science & technology, 1991-09, Vol.25 (9), p.1565-1572

1991

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Subsurface movement of zinc from contaminated dredge spoils at a periodically flooded site

Environmental earth sciences, 2003-12, Vol.45 (1), p.23-34

2003

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Formation of high Tc superconducting films by organometallic chemical vapor deposition

Applied physics letters, 1988-05, Vol.52 (20), p.1743-1745

1988

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Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free 4H-SiC mesas

Applied physics letters, 2006-06, Vol.88 (26)

2006

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Characterization of erbium chloride seeded gallium nitride nanocrystals

Thin solid films, 2008-12, Vol.517 (3), p.1111-1114

2008

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Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC

Applied physics letters, 2007-07, Vol.91 (1)

2007

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Arsenic in glacial aquifers: sources and geochemical controls

Ground water, 2005-07, Vol.43 (4), p.500-510

2005

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Infrared dielectric constant of gallium arsenide

Journal of applied physics, 1996-12, Vol.80 (12), p.6939-6942

1996

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Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8

Array of Two UV-Wavelength Detector Types

Plasmonically enhanced emission from a group-III nitride nanowire emitter

MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates

Infrared dielectric function of wurtzite aluminum nitride

Investigation of three-step epilayer growth approach of GaN films to minimize compensation

High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates

Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging

Characteristics of in situ Mg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps

Experimental study of plasmonically enhanced GaN nanowire light emitters

Rare-earth chloride seeded growth of GaN nano- and micro-crystals

Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces

Design of Gallium Nitride Resonant Cavity Light-Emitting Diodes on Si Substrates

Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging

Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

Impact of candidate sire number and sire relatedness on DNA polymorphism-based measures of exclusion probability and probability of unambiguous parentage

Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging

Oxidation-reduction capacities of aquifer solids

Subsurface movement of zinc from contaminated dredge spoils at a periodically flooded site

Formation of high Tc superconducting films by organometallic chemical vapor deposition

Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free 4H-SiC mesas

Characterization of erbium chloride seeded gallium nitride nanocrystals

Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC

Arsenic in glacial aquifers: sources and geochemical controls

Infrared dielectric constant of gallium arsenide

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