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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Electronics letters, 2014-01, Vol.50 (3), p.197-198

2014

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Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond

Acta materialia, 2017-10, Vol.139, p.215-225

2017

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Long range, non-destructive characterization of GaN substrates for power devices

Journal of crystal growth, 2019-01, Vol.506, p.178-184

2019

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Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices

Journal of crystal growth, 2018-10, Vol.499, p.35-39

2018

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An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching

IEEE electron device letters, 2009-12, Vol.30 (12), p.1251-1253

2009

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Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1864-1870

2008

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Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth

Journal of electronic materials, 2010-05, Vol.39 (5), p.478-481

2010

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Ultrathin strained-SOI by stress balance on compliant substrates and FET performance

IEEE transactions on electron devices, 2005-10, Vol.52 (10), p.2207-2214

2005

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Wafer-Bonded Silicon Gamma-Ray Detectors

IEEE transactions on nuclear science, 2008-04, Vol.55 (2), p.790-796

2008

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Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities

IEEE electron device letters, 1999-07, Vol.20 (7), p.329-331

1999

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Surface segregation and structure of Sb-doped Si(100) films grown at low temperature by molecular beam epitaxy

Surface science, 1995-07, Vol.334 (1), p.29-38

1995

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Relaxation of compressed elastic islands on a viscous layer

Acta materialia, 2002-06, Vol.50 (11), p.2933-2944

2002

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Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC

Journal of electronic materials, 2010-06, Vol.39 (6), p.777-780

2010

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Improved GaN-based HEMT performance by nanocrystalline diamond capping

70th Device Research Conference, 2012, p.155-156

2012

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InAlAsSb∕InGaSb double heterojunction bipolar transistor

Electronics letters, 2005-03, Vol.41 (6), p.370

2005

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Transfer of GaSb thin film to insulating substrate via separation by hydrogen implantation

Electronics letters, 1999-04, Vol.35 (8), p.675

1999

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Thermally stimulated current separation of hole and acceptor trap density in 4H-SiC epitaxial MOS devices using gamma irradiation

2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC), 2009, p.168-172

2009

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pnp Si resonant interband tunnel diode with symmetrical NDR

Electronics letters, 2001-11, Vol.37 (23), p.1412-1414

2001

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Epitaxial Si-based tunnel diodes

Thin solid films, 2000-12, Vol.380 (1), p.145-150

2000

Volltextzugriff (PDF)

Single-crystal ferroelectric microwave capacitor fabricated by separation by hydrogen implantation

Electronics letters, 1999-03, Vol.35 (6), p.477-478

1999

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Thick position-sensitive silicon detectors using a wafer bonding technique

IEEE Nuclear Science Symposium Conference Record, 2005, 2005, Vol.3, p.1412-1415

2005

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Silicon carbide pin diodes as radiation detectors

IEEE Nuclear Science Symposium Conference Record, 2005, 2005, Vol.3, p.1236-1239

2005

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Interference-enhanced Raman Scattering in Strain Characterization of Ultra-thin Strained SiGe and Si Films on Insulator

MRS proceedings, 2004, Vol.809, Article B3.6

2004

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Structural characterization of 3C-SiC films grown on Si layers wafer bonded to polycrystalline SiC substrates

MRS proceedings, 2004, Vol.815, Article J5.23

2004

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A 230-Watt S-band SiGe heterojunction bipolar transistor

IEEE transactions on microwave theory and techniques, 1996-12, Vol.44 (12), p.2392-2397

1996

Volltextzugriff (PDF)

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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond

Long range, non-destructive characterization of GaN substrates for power devices

Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices

An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth

Ultrathin strained-SOI by stress balance on compliant substrates and FET performance

Wafer-Bonded Silicon Gamma-Ray Detectors

Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities

Surface segregation and structure of Sb-doped Si(100) films grown at low temperature by molecular beam epitaxy

Relaxation of compressed elastic islands on a viscous layer

Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC

Improved GaN-based HEMT performance by nanocrystalline diamond capping

InAlAsSb∕InGaSb double heterojunction bipolar transistor

Transfer of GaSb thin film to insulating substrate via separation by hydrogen implantation

Thermally stimulated current separation of hole and acceptor trap density in 4H-SiC epitaxial MOS devices using gamma irradiation

pnp Si resonant interband tunnel diode with symmetrical NDR

Epitaxial Si-based tunnel diodes

Single-crystal ferroelectric microwave capacitor fabricated by separation by hydrogen implantation

Thick position-sensitive silicon detectors using a wafer bonding technique

Silicon carbide pin diodes as radiation detectors

Interference-enhanced Raman Scattering in Strain Characterization of Ultra-thin Strained SiGe and Si Films on Insulator

Structural characterization of 3C-SiC films grown on Si layers wafer bonded to polycrystalline SiC substrates

A 230-Watt S-band SiGe heterojunction bipolar transistor

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