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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Electronics letters, 2014-01, Vol.50 (3), p.197-198

2014

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Long range, non-destructive characterization of GaN substrates for power devices

Journal of crystal growth, 2019-01, Vol.506, p.178-184

2019

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An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching

IEEE electron device letters, 2009-12, Vol.30 (12), p.1251-1253

2009

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GaN vertical and lateral polarity heterostructures on GaN substrates

Journal of crystal growth, 2011-10, Vol.332 (1), p.43-47

2011

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Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays

Thin solid films, 2009-02, Vol.517 (8), p.2742-2744

2009

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Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth

Journal of electronic materials, 2010-05, Vol.39 (5), p.478-481

2010

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GaN single crystals of different habit grown from solution at near atmospheric pressure

Journal of crystal growth, 2010-09, Vol.312 (18), p.2551-2557

2010

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Effect of Si Co Doping on Ferromagnetic Properties of GaGdN

Journal of electronic materials, 2007-04, Vol.36 (4), p.391-396

2007

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Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD

Journal of crystal growth, 2018-09, Vol.498, p.352-356

2018

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Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

Journal of crystal growth, 2012-07, Vol.350 (1), p.21-26

2012

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Correlation of threading screw dislocation density to GaN 2‐DEG mobility

Electronics letters, 2014-11, Vol.50 (23), p.1722-1724

2014

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Approach for dislocation free GaN epitaxy

Journal of crystal growth, 2010-10, Vol.312 (21), p.3143-3146

2010

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Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy

Applied physics letters, 2005-01, Vol.86 (5), p.52101

2005

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Nature of luminescence and strain in gallium nitride nanowires

Journal of crystal growth, 2009-05, Vol.311 (10), p.2982-2986

2009

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Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO 2 nanosphere arrays

Thin solid films, 2009, Vol.517 (8), p.2742-2744

2009

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Space Charge Limited Current and Polarization in AlGaN/GaN Nanowires

ECS transactions, 2011, Vol.41 (6), p.33-38

2011

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Improved GaN-based HEMT performance by nanocrystalline diamond capping

70th Device Research Conference, 2012, p.155-156

2012

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Defect reduction via confined epitaxial growth of GaN

2009 International Semiconductor Device Research Symposium, 2009, p.1-2

2009

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Enhancement mode AlN/ultrathin AlGaN/GaN HEMTs using selective wet etching

2009 International Semiconductor Device Research Symposium, 2009, p.1-2

2009

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Spectroscopic investigations of surfaces by using aminopyrene

Journal of physical chemistry (1952), 1986-10, Vol.90 (22), p.5795-5799

1986

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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Long range, non-destructive characterization of GaN substrates for power devices

An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching

GaN vertical and lateral polarity heterostructures on GaN substrates

Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays

Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth

GaN single crystals of different habit grown from solution at near atmospheric pressure

Effect of Si Co Doping on Ferromagnetic Properties of GaGdN

Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

Correlation of threading screw dislocation density to GaN 2‐DEG mobility

Approach for dislocation free GaN epitaxy

Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy

Nature of luminescence and strain in gallium nitride nanowires

Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO 2 nanosphere arrays

Space Charge Limited Current and Polarization in AlGaN/GaN Nanowires

Improved GaN-based HEMT performance by nanocrystalline diamond capping

Defect reduction via confined epitaxial growth of GaN

Enhancement mode AlN/ultrathin AlGaN/GaN HEMTs using selective wet etching

Spectroscopic investigations of surfaces by using aminopyrene

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