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Multi 6 inch technology for GaAs, GaInP and AlGaInP compounds

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107), 2000, p.357-360

2000

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Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1113-1119

2020

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High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767), 2003, p.197-203

2003

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Chemical Vapor Deposition of Organic-Inorganic Bismuth-Based Perovskite Films for Solar Cell Application

Scientific reports, 2019-07, Vol.9 (1), p.9774-8, Article 9774

2019

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Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaN HEMT on thinned silicon substrate

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD11

2019

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Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

IEEE transactions on electron devices, 2018-07, Vol.65 (7), p.2939-2947

2018

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Limitations for Reliable Operation at Elevated Temperatures of Al 2 O 3 /AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical Vapor Deposition on Silicon Substrate

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7)

2020

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Limitations for Reliable Operation at Elevated Temperatures of Al2O3/AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical Vapor Deposition on Silicon Substrate

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

Semiconductor science and technology, 2010-07, Vol.25 (7), p.075013

2010

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Consistent Surface-Potential-Based Modeling of Drain and Gate Currents in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.455-462

2020

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Temperature Dependent Vertical Conduction of GaN HEMT Structures on Silicon and Bulk GaN Substrates

Physica status solidi. A, Applications and materials science, 2019-01, Vol.216 (1), p.n/a

2019

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Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.748-755

2021

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PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management

Power electronic devices and components, 2023-03, Vol.4, p.100032, Article 100032

2023

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Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

Journal of electronic materials, 2013-05, Vol.42 (5), p.826-832

2013

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Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

IEEE electron device letters, 2013-08, Vol.34 (8), p.978-980

2013

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Growth Studies on Quaternary AlInGaN Layers for HEMT Application

Journal of electronic materials, 2012-05, Vol.41 (5), p.905-909

2012

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PECVD SiN x passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management

Power electronic devices and components, 2023-03, Vol.4, p.100032, Article 100032

2023

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InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

IEEE electron device letters, 2011-11, Vol.32 (11), p.1537-1539

2011

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Large Fieldlike Spin-Orbit Torque and Magnetization Manipulation in a Fully Epitaxial van der Waals Two-Dimensional-Ferromagnet/Topological-Insulator Heterostructure Grown by Molecular-Beam Epitaxy

Physical review applied, 2023-01, Vol.19 (1), Article 014012

2023

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Large Field-Like spin-orbit torque and magnetization manipulation in a full epitaxial van der Waals 2D-ferromagnet/Topological-insulator heterostructure grown by molecular beam epitaxy

Physical review applied, 2023, Vol.19 (1)

2023

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Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors

Journal of applied physics, 2011-10, Vol.110 (8), p.084501-084501-5

2011

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Quaternary Enhancement-Mode HFET With In Situ SiN Passivation

IEEE electron device letters, 2012-04, Vol.33 (4), p.519-521

2012

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Optical constants of diindenoperylene in the dependence of preparation temperature and pressure

Thin solid films, 2013-05, Vol.534, p.255-259

2013

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Fabrication and Characterization of Air-Stable Organic-Inorganic Bismuth-Based Perovskite Solar Cells

MRS advances, 2018-01, Vol.3 (51), p.3085-3090

2018

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Stochastic analysis on temperature-dependent roughening of amorphous organic films

Europhysics letters, 2010-04, Vol.90 (1), p.10008

2010

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Multi 6 inch technology for GaAs, GaInP and AlGaInP compounds

Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs

High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates

Chemical Vapor Deposition of Organic-Inorganic Bismuth-Based Perovskite Films for Solar Cell Application

Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaN HEMT on thinned silicon substrate

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

Limitations for Reliable Operation at Elevated Temperatures of Al 2 O 3 /AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical Vapor Deposition on Silicon Substrate

Limitations for Reliable Operation at Elevated Temperatures of Al2O3/AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical Vapor Deposition on Silicon Substrate

Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

Consistent Surface-Potential-Based Modeling of Drain and Gate Currents in AlGaN/GaN HEMTs

Temperature Dependent Vertical Conduction of GaN HEMT Structures on Silicon and Bulk GaN Substrates

Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model

PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

Growth Studies on Quaternary AlInGaN Layers for HEMT Application

PECVD SiN x passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

Large Fieldlike Spin-Orbit Torque and Magnetization Manipulation in a Fully Epitaxial van der Waals Two-Dimensional-Ferromagnet/Topological-Insulator Heterostructure Grown by Molecular-Beam Epitaxy

Large Field-Like spin-orbit torque and magnetization manipulation in a full epitaxial van der Waals 2D-ferromagnet/Topological-insulator heterostructure grown by molecular beam epitaxy

Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors

Quaternary Enhancement-Mode HFET With In Situ SiN Passivation

Optical constants of diindenoperylene in the dependence of preparation temperature and pressure

Fabrication and Characterization of Air-Stable Organic-Inorganic Bismuth-Based Perovskite Solar Cells

Stochastic analysis on temperature-dependent roughening of amorphous organic films

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