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Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma

ACS applied materials & interfaces, 2015-09, Vol.7 (35), p.19857-19862

2015

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Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

Applied physics letters, 2001-04, Vol.78 (16), p.2357-2359

2001

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Atomic Layer Deposition of Silicon Nitride from Bis( tert -butylamino)silane and N 2 Plasma

ACS applied materials & interfaces, 2015-09, Vol.7 (35), p.19857-19862

2015

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Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride (NbF5) and Carbon Tetrachloride (CCl4): A Combined Experimental and Density Functional Theory Study of the Etch Mechanism

Chemistry of materials, 2021-04, Vol.33 (8), p.2883-2893

2021

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IR and NMR Study of the Chemisorption of Ammonia on Trimethylaluminum-Modified Silica

The journal of physical chemistry. B, 2000-07, Vol.104 (28), p.6599-6609

2000

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Thermal gas-phase etching of titanium nitride (TiN) by thionyl chloride (SOCl2)

Applied surface science, 2021-02, Vol.540, p.148309, Article 148309

2021

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ALD Technology - Present and Future Challenges

ECS transactions, 2007, Vol.3 (15), p.15-26

Haukka, Suvi

2007

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Erratum: “History of atomic layer deposition and its relationship with the American Vacuum Society” [J. Vac. Sci. Technol. A 31, 050818 (2013)]

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-05, Vol.38 (3)

2020

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History of atomic layer deposition and its relationship with the American Vacuum Society

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-09, Vol.31 (5)

2013

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Combining Experimental and DFT Investigation of the Mechanism Involved in Thermal Etching of Titanium Nitride Using Alternate Exposures of NbF 5 and CCl 4 , or CCl 4 Only

Advanced materials interfaces, 2021-11, Vol.8 (22)

2021

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Combining Experimental and DFT Investigation of the Mechanism Involved in Thermal Etching of Titanium Nitride Using Alternate Exposures of NbF5 and CCl4, or CCl4 Only

Advanced materials interfaces, 2021-11, Vol.8 (22), p.n/a

2021

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An IR and NMR study of the chemisorption of TiCl4 on silica

Journal of physical chemistry (1952), 1993, Vol.97 (19), p.5085-5094

1993

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Chemisorption of chromium acetylacetonate on porous high surface area silica

Applied surface science, 1994-01, Vol.75 (1), p.220-227

1994

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The reaction of hexamethyldisilazane and subsequent oxidation of trimethylsilyl groups on silica studied by solid-state NMR and FTIR

Journal of physical chemistry (1952), 1994-02, Vol.98 (6), p.1695-1703

1994

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Processing of catalysts by atomic layer epitaxy: modification of supports

Applied surface science, 1997-11, Vol.121, p.286-291

1997

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In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Al x Si y O z from Trimethylaluminium, Hexakis(ethylamino)disilane, and Water

Chemistry of materials, 2012-10, Vol.24 (20), p.3859-3867

2012

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Film Uniformity in Atomic Layer Deposition

Chemical vapor deposition, 2006-01, Vol.12 (1), p.13-24

2006

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History of atomic layer deposition and its relationship with the American Vacuum Society

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-09, Vol.31 (5)

2013

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High Growth Rate SiO2 by Atomic Layer Deposition

ECS transactions, 2008, Vol.13 (1), p.453-457

2008

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A Family of Heteroleptic Titanium Guanidinates: Synthesis, Thermolysis, and Surface Reactivity

Inorganic chemistry, 2010-02, Vol.49 (4), p.1976-1982

2010

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Characterisation of ALCVD Al2O3–ZrO2 nanolaminates, link between electrical and structural properties

Journal of non-crystalline solids, 2002-05, Vol.303 (1), p.123-133

2002

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Reactions of HMDS, TiCl4, ZrCl4, and AlCl3 with Silica As Interpreted from Low-Frequency Diffuse Reflectance Infrared Spectra

The journal of physical chemistry. B, 1997-12, Vol.101 (49), p.10365-10372

1997

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Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

Applied physics letters, 2003-06, Vol.82 (25), p.4486-4488

2003

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Dielectric Material Options for Integrated Capacitors

ECS journal of solid state science and technology, 2014-01, Vol.3 (8), p.N120-N125

2014

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Studies on the Surface Reactions of Substituted Disilanes with Silica Surface

MRS proceedings, 2008, Vol.1066, Article 1066-A05-07

2008

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Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma

Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

Atomic Layer Deposition of Silicon Nitride from Bis( tert -butylamino)silane and N 2 Plasma

Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride (NbF5) and Carbon Tetrachloride (CCl4): A Combined Experimental and Density Functional Theory Study of the Etch Mechanism

IR and NMR Study of the Chemisorption of Ammonia on Trimethylaluminum-Modified Silica

Thermal gas-phase etching of titanium nitride (TiN) by thionyl chloride (SOCl2)

ALD Technology - Present and Future Challenges

Erratum: “History of atomic layer deposition and its relationship with the American Vacuum Society” [J. Vac. Sci. Technol. A 31, 050818 (2013)]

History of atomic layer deposition and its relationship with the American Vacuum Society

Combining Experimental and DFT Investigation of the Mechanism Involved in Thermal Etching of Titanium Nitride Using Alternate Exposures of NbF 5 and CCl 4 , or CCl 4 Only

Combining Experimental and DFT Investigation of the Mechanism Involved in Thermal Etching of Titanium Nitride Using Alternate Exposures of NbF5 and CCl4, or CCl4 Only

An IR and NMR study of the chemisorption of TiCl4 on silica

Chemisorption of chromium acetylacetonate on porous high surface area silica

The reaction of hexamethyldisilazane and subsequent oxidation of trimethylsilyl groups on silica studied by solid-state NMR and FTIR

Processing of catalysts by atomic layer epitaxy: modification of supports

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Al x Si y O z from Trimethylaluminium, Hexakis(ethylamino)disilane, and Water

Film Uniformity in Atomic Layer Deposition

History of atomic layer deposition and its relationship with the American Vacuum Society

High Growth Rate SiO2 by Atomic Layer Deposition

A Family of Heteroleptic Titanium Guanidinates: Synthesis, Thermolysis, and Surface Reactivity

Characterisation of ALCVD Al2O3–ZrO2 nanolaminates, link between electrical and structural properties

Reactions of HMDS, TiCl4, ZrCl4, and AlCl3 with Silica As Interpreted from Low-Frequency Diffuse Reflectance Infrared Spectra

Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

Dielectric Material Options for Integrated Capacitors

Studies on the Surface Reactions of Substituted Disilanes with Silica Surface

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