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Thermal conductivity of isotopically controlled silicon nanostructures

New journal of physics, 2014-01, Vol.16 (1), p.15021-18

2014

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Suppression of tin precipitation in SiSn alloy layers by implanted carbon

Applied physics letters, 2014-06, Vol.104 (23)

2014

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Interstitial-mediated diffusion in germanium under proton irradiation

Physical review letters, 2009-12, Vol.103 (25), p.255501-255501, Article 255501

2009

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Reduced thermal conductivity of isotopically modulated silicon multilayer structures

Applied physics letters, 2012-08, Vol.101 (6), p.64103

2012

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Irradiation-induced nano-voids in strained tin precipitates in silicon

Applied physics letters, 2014-04, Vol.104 (15)

2014

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Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

Microelectronic engineering, 2014-08, Vol.125, p.8-13

2014

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Diffusion of silicon in crystalline germanium

Semiconductor science and technology, 2006-06, Vol.21 (6), p.758-762

2006

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Piezoresistance of silicon and strained Si0.9Ge0.1

Sensors and actuators. A. Physical., 2005-09, Vol.A123-A124, p.388-396

2005

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Self-Diffusion in Amorphous Silicon by Local Bond Rearrangements

Physical review letters, 2018-06, Vol.120 (22), p.225902-225902, Article 225902

2018

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Aluminum nanoparticles for plasmon-improved coupling of light into silicon

Nanotechnology, 2012-03, Vol.23 (8), p.085202-085202

2012

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Composition dependence of Si and Ge diffusion in relaxed Si1−xGex alloys

Journal of applied physics, 2010-04, Vol.107 (7)

2010

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Radiation emission at channeling of electrons in a strained layer Si1-xGex undulator crystal

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2013-08, Vol.309, p.37-44

2013

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Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions

Physical review. B, Condensed matter and materials physics, 2013-08, Vol.88 (8), Article 085206

2013

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Doping dependence of self-diffusion in germanium and the charge states of vacancies

Applied physics letters, 2013-06, Vol.102 (24)

2013

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Morphological properties of laser irradiated Si/Ge multilayers

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4701-4704

2009

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Ge nanocrystals in magnetron sputtered SiO2

Applied physics. A, Materials science & processing, 2006-04, Vol.83 (1), p.41-48

2006

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Channeling and Radiation of Electrons in Silicon Single Crystals and Si1−xGex Crystalline Undulators

Journal of physics. Conference series, 2013, Vol.438 (1)

2013

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Influence of Ge content on the optical properties of X and W centers in dilute Si-Ge alloys

Physical review. B, Condensed matter and materials physics, 2011-10, Vol.84 (16), Article 165211

2011

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Impact of 100 MeV Au on the surface of relaxed Si0.5Ge0.5 alloy films studied by atomic force microscopy

Surface science, 2006-08, Vol.600 (15), p.3087-3092

2006

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Boron and phosphorus diffusion in strained and relaxed Si and SiGe

Journal of applied physics, 2003-09, Vol.94 (6), p.3883-3890

2003

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Luminescence decay dynamics of self-assembled germanium islands in silicon

Applied physics letters, 2011-02, Vol.98 (9)

2011

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Responses of fibroblasts and glial cells to nanostructured platinum surfaces

Nanotechnology, 2009-09, Vol.20 (38), p.385103-9

2009

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Radiation emission at channeling of electrons in a strained layer undulator crystal

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2013-08, Vol.309, p.37-44

2013

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Synthesis and analysis of hollow SnO2 nanoislands

Applied physics letters, 2008-05, Vol.92 (19)

2008

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The antimony-vacancy defect in p -type germanium

Applied physics letters, 2005-10, Vol.87 (17), p.172103-172103-3

2005

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Thermal conductivity of isotopically controlled silicon nanostructures

Suppression of tin precipitation in SiSn alloy layers by implanted carbon

Interstitial-mediated diffusion in germanium under proton irradiation

Reduced thermal conductivity of isotopically modulated silicon multilayer structures

Irradiation-induced nano-voids in strained tin precipitates in silicon

Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

Diffusion of silicon in crystalline germanium

Piezoresistance of silicon and strained Si0.9Ge0.1

Self-Diffusion in Amorphous Silicon by Local Bond Rearrangements

Aluminum nanoparticles for plasmon-improved coupling of light into silicon

Composition dependence of Si and Ge diffusion in relaxed Si1−xGex alloys

Radiation emission at channeling of electrons in a strained layer Si1-xGex undulator crystal

Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions

Doping dependence of self-diffusion in germanium and the charge states of vacancies

Morphological properties of laser irradiated Si/Ge multilayers

Ge nanocrystals in magnetron sputtered SiO2

Channeling and Radiation of Electrons in Silicon Single Crystals and Si1−xGex Crystalline Undulators

Influence of Ge content on the optical properties of X and W centers in dilute Si-Ge alloys

Impact of 100 MeV Au on the surface of relaxed Si0.5Ge0.5 alloy films studied by atomic force microscopy

Boron and phosphorus diffusion in strained and relaxed Si and SiGe

Luminescence decay dynamics of self-assembled germanium islands in silicon

Responses of fibroblasts and glial cells to nanostructured platinum surfaces

Radiation emission at channeling of electrons in a strained layer undulator crystal

Synthesis and analysis of hollow SnO2 nanoislands

The antimony-vacancy defect in p -type germanium

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