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Development of a current source resonant inverter for high current MHz induction heating

IET power electronics, 2022-01, Vol.15 (1), p.1-10

2022

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Mitigation measures of the electric field in the medium‐voltage power module: Effect of voltage types and recommendations for designers

High voltage, 2021-10, Vol.6 (5), p.836-849

2021

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How Can a Cutting-Edge Gallium Nitride High-Electron-Mobility Transistor Encounter Catastrophic Failure Within the Acceptable Temperature Range?

IEEE transactions on power electronics, 2020-07, Vol.35 (7), p.6711-6718

2020

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Overview of Digital Design and Finite-Element Analysis in Modern Power Electronic Packaging

IEEE transactions on power electronics, 2020-10, Vol.35 (10), p.10892-10905

2020

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Evaluation of in situ Thermomechanical Stress-Strain in Power Modules Using Laser Displacement Sensors

IEEE transactions on power electronics, 2021-08, Vol.36 (8), p.9411-9418

2021

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A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices

IEEE transactions on power electronics, 2019-03, Vol.34 (3), p.2494-2504

2019

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Physics-Based Modeling of Parasitic Capacitance in Medium-Voltage Filter Inductors

IEEE transactions on power electronics, 2021-01, Vol.36 (1), p.829-843

2021

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Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

IEEE transactions on power electronics, 2016-01, Vol.31 (1), p.621-634

2016

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Parasitic Capacitance Modeling of Inductors Without Using the Floating Voltage Potential of Core

IEEE transactions on industrial electronics (1982), 2022-03, Vol.69 (3), p.3214-3222

2022

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Statistical Method of Estimating Semiconductor Switching Transition Time Enabling Condition Monitoring of Megawatt Converters

IEEE transactions on instrumentation and measurement, 2020-06, Vol.69 (6), p.3654-3665

2020

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Modeling of Short-Circuit-Related Thermal Stress in Aged IGBT Modules

IEEE transactions on industry applications, 2017-09, Vol.53 (5), p.4788-4795

2017

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Short-Circuit Degradation of 10-kV 10-A SiC MOSFET

IEEE transactions on power electronics, 2017-12, Vol.32 (12), p.9342-9354

2017

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Performance evaluation of lithium-ion batteries (LiFePO4 cathode) from novel perspectives using a new figure of merit, temperature distribution analysis, and cell package analysis

Journal of energy storage, 2021-12, Vol.44, p.103413, Article 103413

2021

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Impact of Power Module Parasitic Capacitances on Medium-Voltage SiC MOSFETs Switching Transients

IEEE journal of emerging and selected topics in power electronics, 2020-03, Vol.8 (1), p.298-310

2020

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Near-infrared–ultraviolet absorption cross sections for Ge nanocrystals in SiO2 thin films: Effects of shape and layer structure

Journal of applied physics, 2011-05, Vol.109 (9)

2011

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Heat cycle failure point prediction by 3D thermal stress analysis for medium voltage power module

2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023, p.2668-2675

2023

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Aluminum nanoparticles for plasmon-improved coupling of light into silicon

Nanotechnology, 2012-03, Vol.23 (8), p.085202-085202

2012

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High-frequency resonant operation of an integrated medium-voltage SiC MOSFET power module

IET power electronics, 2020-02, Vol.13 (3), p.475-482

2020

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Failure mechanism analysis of a discrete 650V enhancement mode GaN-on-Si power device with reverse conduction accelerated power cycling test

2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 2017, p.756-760

2017

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Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 2020, p.2751-2757

2020

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Near-infrared-ultraviolet absorption cross sections for Ge nanocrystals in SiO 2 thin films: Effects of shape and layer structure

Journal of applied physics, 2011-05, Vol.109 (9), p.094314-094314-14

2011

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Plasmonic Properties of ?-Sn Nanoparticles in Ordered and Disordered Arrangements

Plasmonics (Norwell, Mass.), 2013-03, Vol.8 (1), p.153-158

2013

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Behavioral Modeling of Ground Current in Filter Inductors of Medium-Voltage SiC-MOSFET-Based Converters

2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 2020, p.1972-1978

2020

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Volltext

Plasmonic Properties of β-Sn Nanoparticles in Ordered and Disordered Arrangements

Plasmonics (Norwell, Mass.), 2013-03, Vol.8 (1), p.153-158

2013

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Tuning Plasmon Resonances for Light Coupling into Silicon: a “Rule of Thumb” for Experimental Design

Plasmonics (Norwell, Mass.), 2013-03, Vol.8 (1), p.79-84

2013

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Development of a current source resonant inverter for high current MHz induction heating

Mitigation measures of the electric field in the medium‐voltage power module: Effect of voltage types and recommendations for designers

How Can a Cutting-Edge Gallium Nitride High-Electron-Mobility Transistor Encounter Catastrophic Failure Within the Acceptable Temperature Range?

Overview of Digital Design and Finite-Element Analysis in Modern Power Electronic Packaging

Evaluation of in situ Thermomechanical Stress-Strain in Power Modules Using Laser Displacement Sensors

A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices

Physics-Based Modeling of Parasitic Capacitance in Medium-Voltage Filter Inductors

Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

Parasitic Capacitance Modeling of Inductors Without Using the Floating Voltage Potential of Core

Statistical Method of Estimating Semiconductor Switching Transition Time Enabling Condition Monitoring of Megawatt Converters

Modeling of Short-Circuit-Related Thermal Stress in Aged IGBT Modules

Short-Circuit Degradation of 10-kV 10-A SiC MOSFET

Performance evaluation of lithium-ion batteries (LiFePO4 cathode) from novel perspectives using a new figure of merit, temperature distribution analysis, and cell package analysis

Impact of Power Module Parasitic Capacitances on Medium-Voltage SiC MOSFETs Switching Transients

Near-infrared–ultraviolet absorption cross sections for Ge nanocrystals in SiO2 thin films: Effects of shape and layer structure

Heat cycle failure point prediction by 3D thermal stress analysis for medium voltage power module

Aluminum nanoparticles for plasmon-improved coupling of light into silicon

High-frequency resonant operation of an integrated medium-voltage SiC MOSFET power module

Failure mechanism analysis of a discrete 650V enhancement mode GaN-on-Si power device with reverse conduction accelerated power cycling test

Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

Near-infrared-ultraviolet absorption cross sections for Ge nanocrystals in SiO 2 thin films: Effects of shape and layer structure

Plasmonic Properties of ?-Sn Nanoparticles in Ordered and Disordered Arrangements

Behavioral Modeling of Ground Current in Filter Inductors of Medium-Voltage SiC-MOSFET-Based Converters

Plasmonic Properties of β-Sn Nanoparticles in Ordered and Disordered Arrangements

Tuning Plasmon Resonances for Light Coupling into Silicon: a “Rule of Thumb” for Experimental Design

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