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0.1-nm narrow bandwidth transmission of a 2.5-Gb/s spectrum-sliced incoherent light channel using an all-optical bandwidth expansion technique at the receiver

IEEE photonics technology letters, 1998-10, Vol.10 (10), p.1501-1503

1998

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0.1-nm slim bandwidth transmission of a 2.5-Gbit/s spectrum-sliced incoherent channel using an all-optical bandwidth expansion technique at the receiver

OFC '98. Optical Fiber Communication Conference and Exhibit. Technical Digest. Conference Edition. 1998 OSA Technical Digest Series Vol.2 (IEEE Cat. No.98CH36177), 1998, p.127-128

1998

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A 0.18 /spl mu/m CMOS SoC of a front-end hardware platform for DVD-multi recorders

2005 Digest of Technical Papers. International Conference on Consumer Electronics, 2005. ICCE, 2005, p.53-54

2005

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Al 0.25 Ga 0.75 N/GaN enhancement-mode MOS high-electron-mobility transistors with Al 2 O 3 dielectric obtained by ozone water oxidization method

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4), p.44102

2016

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A 0.26- \mu\hbox^ U-Shaped Nitride-Based Programming Cell on Pure 90-nm CMOS Technology

IEEE electron device letters, 2007-09, Vol.28 (9), p.837-839

2007

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A 0.26- mu m super(2) U-Shaped Nitride-Based Programming Cell on Pure 90-nm CMOS Technology

IEEE electron device letters, 2007-01, Vol.28 (9)

2007

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A 0.26-[mu]m@@u2@ U-Shaped Nitride-Based Programming Cell on Pure 90-nm CMOS Technology

IEEE electron device letters, 2007-09, Vol.28 (9), p.837-839

2007

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A 0.26-[mu]m2 U-Shaped Nitride-Based Programming Cell on Pure 90-nm CMOS Technology

IEEE electron device letters, 2007-09, Vol.28 (9), p.837

2007

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A 0.26-μm2 U-Shaped Nitride-Based programming cell on pure 90-nm CMOS technology

IEEE electron device letters, 2007, Vol.28 (9), p.837-839

2007

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A 0.45 pJ/b, 6.4 Gb/s Forwarded-Clock Receiver With DLL-Based Self-Tracking Loop for Unmatched Memory Interfaces

IEEE transactions on circuits and systems. II, Express briefs, 2020-10, Vol.67 (10), p.1814-1818

2020

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A 0.5 V 10 b 3 MS/s 2-Then-1b/Cycle SAR ADC With Digital-Based Time-Domain Reference and Dual-Mode Comparator

IEEE transactions on circuits and systems. II, Express briefs, 2022-03, Vol.69 (3), p.909-913

2022

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In 0.53 Ga 0.47 As n -metal-oxide-semiconductor field effect transistors with atomic layer deposited Al 2 O 3 , HfO 2 , and LaAlO 3 gate dielectrics

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-07, Vol.27 (4), p.2024-2027

2009

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In 0.53 Ga 0.47 As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al2O3, HfO2, and LaAlO3 gate dielectrics

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-07, Vol.27 (4), p.2024-2027

2009

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In 0.53 Ga 0.47 As n -metal-oxide-semiconductor field effect transistorswith atomic layer deposited Al 2 O 3 , HfO 2 , and LaAlO 3 gate dielectrics

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-07, Vol.27 (4), p.2024-2027

2009

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A 0.65V embedded SDRAM with smart boosting and power management in a 45nm CMOS technology

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, 2012, p.1-4

2012

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A 0.67nJ/S time-domain temperature sensor for low power on-chip thermal management

2013 IEEE International Conference on Consumer Electronics (ICCE), 2013, p.572-573

2013

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0.76-mW/pF/GHz, 7-GHz Quadrature Resonant Clock With Frequency Tuning Capacitor and Amplitude Control Feedback Loop

IEEE transactions on circuits and systems. II, Express briefs, 2021-01, Vol.68 (1), p.136-140

2021

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0.78-mW/pF/GHz, 12.5-GHz Quadrature Resonant Clock with Frequency Tuning Capacitor

2020 35th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC), 2020, p.65-68

2020

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A 0.8 µm Smart Dual Conversion Gain Pixel for 64 Megapixels CMOS Image Sensor with 12k e- Full-Well Capacitance and Low Dark Noise

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.16.2.1-16.2.4

2019

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A 0.95pJ/b 5.12Gb/s/pin Charge-Recycling IOs with 47% Energy Reduction for Big Data Applications

2022 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2022, p.1-3

2022

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0056 The simplest model for prediction of nonsentinel lymph node status in breast cancer patients with metastatic sentinel lymph nodes

Breast (Edinburgh), 2009, Vol.18, p.S32-S32

2009

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03-P080 Reciprocal Fgf signalling interactions modulate differentiation of mouse tongue epithelium

Mechanisms of development, 2009-08, Vol.126, p.S90-S90

2009

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03-P081 Cell fate specification during cranial base development

Mechanisms of development, 2009-08, Vol.126, p.S90-S90

2009

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03-P103 Morphogenesis and cellular mechanisms in mice molar root development

Mechanisms of development, 2009-08, Vol.126, p.S97-S97

2009

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03-P122 Molecular interactions and cellular events involved in palatal rugae development

Mechanisms of development, 2009-08, Vol.126, p.S102-S103

2009

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1 – 25 von 45.035

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0.1-nm narrow bandwidth transmission of a 2.5-Gb/s spectrum-sliced incoherent light channel using an all-optical bandwidth expansion technique at the receiver

0.1-nm slim bandwidth transmission of a 2.5-Gbit/s spectrum-sliced incoherent channel using an all-optical bandwidth expansion technique at the receiver

A 0.18 /spl mu/m CMOS SoC of a front-end hardware platform for DVD-multi recorders

Al 0.25 Ga 0.75 N/GaN enhancement-mode MOS high-electron-mobility transistors with Al 2 O 3 dielectric obtained by ozone water oxidization method

A 0.26- \mu\hbox^ U-Shaped Nitride-Based Programming Cell on Pure 90-nm CMOS Technology

A 0.26- mu m super(2) U-Shaped Nitride-Based Programming Cell on Pure 90-nm CMOS Technology

A 0.26-[mu]m@@u2@ U-Shaped Nitride-Based Programming Cell on Pure 90-nm CMOS Technology

A 0.26-[mu]m2 U-Shaped Nitride-Based Programming Cell on Pure 90-nm CMOS Technology

A 0.26-μm2 U-Shaped Nitride-Based programming cell on pure 90-nm CMOS technology

A 0.45 pJ/b, 6.4 Gb/s Forwarded-Clock Receiver With DLL-Based Self-Tracking Loop for Unmatched Memory Interfaces

A 0.5 V 10 b 3 MS/s 2-Then-1b/Cycle SAR ADC With Digital-Based Time-Domain Reference and Dual-Mode Comparator

In 0.53 Ga 0.47 As n -metal-oxide-semiconductor field effect transistors with atomic layer deposited Al 2 O 3 , HfO 2 , and LaAlO 3 gate dielectrics

In 0.53 Ga 0.47 As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al2O3, HfO2, and LaAlO3 gate dielectrics

In 0.53 Ga 0.47 As n -metal-oxide-semiconductor field effect transistorswith atomic layer deposited Al 2 O 3 , HfO 2 , and LaAlO 3 gate dielectrics

A 0.65V embedded SDRAM with smart boosting and power management in a 45nm CMOS technology

A 0.67nJ/S time-domain temperature sensor for low power on-chip thermal management

0.76-mW/pF/GHz, 7-GHz Quadrature Resonant Clock With Frequency Tuning Capacitor and Amplitude Control Feedback Loop

0.78-mW/pF/GHz, 12.5-GHz Quadrature Resonant Clock with Frequency Tuning Capacitor

A 0.8 µm Smart Dual Conversion Gain Pixel for 64 Megapixels CMOS Image Sensor with 12k e- Full-Well Capacitance and Low Dark Noise

A 0.95pJ/b 5.12Gb/s/pin Charge-Recycling IOs with 47% Energy Reduction for Big Data Applications

0056 The simplest model for prediction of nonsentinel lymph node status in breast cancer patients with metastatic sentinel lymph nodes

03-P080 Reciprocal Fgf signalling interactions modulate differentiation of mouse tongue epithelium

03-P081 Cell fate specification during cranial base development

03-P103 Morphogenesis and cellular mechanisms in mice molar root development

03-P122 Molecular interactions and cellular events involved in palatal rugae development

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