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GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium

Journal of applied physics, 2017-01, Vol.121 (3)

2017

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Laser doping for ohmic contacts in n-type Ge

Applied physics letters, 2014-12, Vol.105 (24)

2014

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Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2

Journal of crystal growth, 2014-09, Vol.401, p.554-558

2014

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Electrografting of the cyanomethyl radical onto carbon and metal surfaces

Electrochimica acta, 2011, Vol.56 (3), p.1476-1484

2011

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Cathodoluminescence spectral imaging as a technique for the study of cavity degradation of high-power QW lasers

Materials science in semiconductor processing, 2006-02, Vol.9 (1), p.204-209

2006

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Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO sub(2)

Journal of crystal growth, 2014-09, Vol.401, p.563-566

2014

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Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers

Physica status solidi. A, Applied research, 2003-01, Vol.195 (1), p.159-164

2003

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Thermal activation of Au/Ti by interdiffusion for getter film integration in wafer-level vacuum packaging

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), 2014, p.35-35

2014

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Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers

Physica status solidi. C, 2003-01 (3), p.159-164

2003

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Compensation mechanisms in GaAs

Journal of applied physics, 1980-05, Vol.51 (5), p.2840-2852

1980

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La revue des réadmissions imprévues permet-elle d’améliorer la qualité des soins ? Étude pilote de faisabilité dans deux services cliniques

Revue d'épidémiologie et de santé publique, 2008-09, Vol.56 (5), p.293-294

2008

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Évaluation coût–efficacité de l’utilisation de sondes d’intubation à aspiration sous-glottique pour la prévention des pneumopathies sous ventilation

Revue d'épidémiologie et de santé publique, 2008-09, Vol.56 (5), p.293-293

2008

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La création du dossier informatisé de séjour avant l’admission est-elle un bon marqueur de programmation des réadmissions ? Étude dans un pôle médical d’activité de CHU

Revue d'épidémiologie et de santé publique, 2008-04, Vol.56 (1), p.33-34

2008

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High pressure solution growth of GaN

Journal of crystal growth, 1975-01, Vol.31, p.197-203

1975

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Growth monitoring and characterization of (Al, Ga)As-GaAs heterostructures by ellipsometry

Journal of crystal growth, 1981-01, Vol.55 (1), p.198-206

1981

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Distribution of impurities in semi-insulating GaAs after heat treatment in hydrogen

Journal of applied physics, 1981-02, Vol.52 (2), p.1110-1112

1981

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Optimized growth conditions and properties of N-type and insulating GaN

Materials research bulletin, 1976-01, Vol.11 (4), p.445-450

1976

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Dislocations in GaAs

Journal of crystal growth, 1982-01, Vol.57 (2), p.245-258

1982

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Cyclotron resonance from the far-infrared transmission and the photoconductivity of a two-dimensional electron gas in a GaAs/AlGaAs heterojunction

Solid state communications, 1984-01, Vol.50 (8), p.753-756

1984

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Study of experimental conditions in thermally stimulated current measurements: Application to the characterization of semi-insulating chromium-doped gallium arsenide

Journal of electrostatics, 1977-01, Vol.3 (1), p.223-232

1977

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Characterization of Semiconductor Materials by Charged Particle Activation

IEEE transactions on nuclear science, 1981-01, Vol.28 (2), p.1675-1678

1981

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IEEE_Xplore

Oxygen-related gettering of silicon during growth of bulk GaAs Bridgman crystals

Journal of physics. C, Solid state physics, 1982-03, Vol.15 (9), p.1841-1856

1982

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Studies on the Elaboration and the Characterization of Gaas by Radioactivation Analysis with Charged Particles

Nuclear Physics Methods in Materials Research, p.331-333

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Contribution of activation analysis with low energy charged particles to studies on GaAs

Journal of Radioanalytical Chemistry, 1980-01, Vol.58 (1-2), p.165-172

1980

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HIGH PRESSURE SOLUTION GROWTH OF GaN

Vapour Growth and Epitaxy, 1975, p.197-203

1975

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Dislocations
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GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium

Laser doping for ohmic contacts in n-type Ge

Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2

Electrografting of the cyanomethyl radical onto carbon and metal surfaces

Cathodoluminescence spectral imaging as a technique for the study of cavity degradation of high-power QW lasers

Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO sub(2)

Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers

Thermal activation of Au/Ti by interdiffusion for getter film integration in wafer-level vacuum packaging

Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers

Compensation mechanisms in GaAs

La revue des réadmissions imprévues permet-elle d’améliorer la qualité des soins ? Étude pilote de faisabilité dans deux services cliniques

Évaluation coût–efficacité de l’utilisation de sondes d’intubation à aspiration sous-glottique pour la prévention des pneumopathies sous ventilation

La création du dossier informatisé de séjour avant l’admission est-elle un bon marqueur de programmation des réadmissions ? Étude dans un pôle médical d’activité de CHU

High pressure solution growth of GaN

Growth monitoring and characterization of (Al, Ga)As-GaAs heterostructures by ellipsometry

Distribution of impurities in semi-insulating GaAs after heat treatment in hydrogen

Optimized growth conditions and properties of N-type and insulating GaN

Dislocations in GaAs

Cyclotron resonance from the far-infrared transmission and the photoconductivity of a two-dimensional electron gas in a GaAs/AlGaAs heterojunction

Study of experimental conditions in thermally stimulated current measurements: Application to the characterization of semi-insulating chromium-doped gallium arsenide

Characterization of Semiconductor Materials by Charged Particle Activation

Oxygen-related gettering of silicon during growth of bulk GaAs Bridgman crystals

Studies on the Elaboration and the Characterization of Gaas by Radioactivation Analysis with Charged Particles

Contribution of activation analysis with low energy charged particles to studies on GaAs

HIGH PRESSURE SOLUTION GROWTH OF GaN

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