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Caractérisation de la configuration RadioFréquence d’un Site Relais de Téléphonie mobile

Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2024, Vol.23, p.1014

2024

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Micro and nano-structuration of silicon by femtosecond laser: Application to silicon photovoltaic cells fabrication

Thin solid films, 2008-08, Vol.516 (20), p.6791-6795

2008

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Angle-dependent ray tracing simulations of reflections on pyramidal textures for silicon solar cells

Solar energy, 2014-12, Vol.110, p.378-385

2014

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Electro-optic and converse-piezoelectric properties of epitaxial GaN grown on silicon by metal-organic chemical vapor deposition

Applied physics letters, 2014-03, Vol.104 (10)

2014

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Electrical and Chemical Studies on Al2O3 Passivation Activation Process

Energy procedia, 2014, Vol.60, p.85-89

2014

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Kinetics of Ge growth at low temperature on Si(001) by ultrahigh vacuum chemical vapor deposition

Journal of applied physics, 2005-03, Vol.97 (6), p.064907-064907-6

2005

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Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor deposition

Journal of crystal growth, 2007-10, Vol.308 (1), p.26-29

2007

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Performance simulation of an InGaSb/GaSb based quantum well structure for laser diode applications

Physics letters. A, 2023-04, Vol.467, p.128711, Article 128711

2023

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Antireflective sol–gel TiO2 thin films for single crystal silicon and textured polycrystal silicon

Journal of sol-gel science and technology, 2012-04, Vol.62 (1), p.24-30

2012

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UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si

Optical materials, 2005-02, Vol.27 (5), p.822-826

2005

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Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

Applied surface science, 2007-12, Vol.254 (4), p.911-915

2007

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Ge growth over thin SiO2 by UHV-CVD for MOSFET applications

Thin solid films, 2008-11, Vol.517 (1), p.401-403

2008

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Localized laser thermal annealing of nanometric SiGe layers protected by a dielectric Bragg mirror

Thin solid films, 2008-11, Vol.517 (1), p.327-330

2008

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Study On Laser-Induced Periodic Structures And Photovoltaic Application

AIP conference proceedings, 2010, Vol.1278 (1)

2010

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Recent Progress in High-Speed Silicon-Based Optical Modulators

Proceedings of the IEEE, 2009-07, Vol.97 (7), p.1199-1215

2009

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Bonobos have a more human-like second-to-fourth finger length ratio (2D:4D) than chimpanzees: a hypothesized indication of lower prenatal androgens

Journal of human evolution, 2009-04, Vol.56 (4), p.361-365

2009

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Kinetics of selective epitaxial growth of Si and relaxed Ge by ultrahigh vacuum chemical vapor deposition in Si(0 0 1) windows

Materials science in semiconductor processing, 2006-08, Vol.9 (4), p.460-464

2006

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Selective epitaxial growth of Ge quantum dots on patterned SiO2/Si(0 0 1) surfaces

Applied surface science, 2004-03, Vol.224 (1-4), p.134-138

2004

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Kinetics of the heteroepitaxial growth of Ge layer at low temperature on Si(001) in UHV-CVD

Physica status solidi. A, Applications and materials science, 2004-01, Vol.201 (2), p.329-332

2004

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Integration of germanium waveguide photodetectors for intrachip optical interconnects

Optical engineering, 2005-07, Vol.44 (7), p.75402

Halbwax, Mathieu

2005

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Electro-optic and converse piezoelectric coefficients of epitaxial thin films: GaN grown on Si, and (Sr,Ba)Nb2O6 (SBN) grown on Pt coated MgO

2014 Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications, 2014, p.1-2

2014

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Ge growth over thin SiO 2 by UHV–CVD for MOSFET applications

Thin solid films, 2008, Vol.517 (1), p.401-403

2008

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Kinetics of the heteroepitaxial growth of Ge layer at low temperature on Si(001) in UHV-CVD

Physica status solidi. C, 2004, Vol.1 (2), p.329-332

2004

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Formation and optical properties of Ge quantum dots selectively grown on patterned Si(001) substrates

Physica status solidi. A, Applied research, 2004-01, Vol.201 (2), p.353-356

2004

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Epitaxial growth of Ge on a thin SiO 2 layer by ultrahigh vacuum chemical vapor deposition

Journal of crystal growth, 2007, Vol.308 (1), p.26-29

2007

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Caractérisation de la configuration RadioFréquence d’un Site Relais de Téléphonie mobile

Micro and nano-structuration of silicon by femtosecond laser: Application to silicon photovoltaic cells fabrication

Angle-dependent ray tracing simulations of reflections on pyramidal textures for silicon solar cells

Electro-optic and converse-piezoelectric properties of epitaxial GaN grown on silicon by metal-organic chemical vapor deposition

Electrical and Chemical Studies on Al2O3 Passivation Activation Process

Kinetics of Ge growth at low temperature on Si(001) by ultrahigh vacuum chemical vapor deposition

Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor deposition

Performance simulation of an InGaSb/GaSb based quantum well structure for laser diode applications

Antireflective sol–gel TiO2 thin films for single crystal silicon and textured polycrystal silicon

UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si

Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

Ge growth over thin SiO2 by UHV-CVD for MOSFET applications

Localized laser thermal annealing of nanometric SiGe layers protected by a dielectric Bragg mirror

Study On Laser-Induced Periodic Structures And Photovoltaic Application

Recent Progress in High-Speed Silicon-Based Optical Modulators

Bonobos have a more human-like second-to-fourth finger length ratio (2D:4D) than chimpanzees: a hypothesized indication of lower prenatal androgens

Kinetics of selective epitaxial growth of Si and relaxed Ge by ultrahigh vacuum chemical vapor deposition in Si(0 0 1) windows

Selective epitaxial growth of Ge quantum dots on patterned SiO2/Si(0 0 1) surfaces

Kinetics of the heteroepitaxial growth of Ge layer at low temperature on Si(001) in UHV-CVD

Integration of germanium waveguide photodetectors for intrachip optical interconnects

Electro-optic and converse piezoelectric coefficients of epitaxial thin films: GaN grown on Si, and (Sr,Ba)Nb2O6 (SBN) grown on Pt coated MgO

Ge growth over thin SiO 2 by UHV–CVD for MOSFET applications

Kinetics of the heteroepitaxial growth of Ge layer at low temperature on Si(001) in UHV-CVD

Formation and optical properties of Ge quantum dots selectively grown on patterned Si(001) substrates

Epitaxial growth of Ge on a thin SiO 2 layer by ultrahigh vacuum chemical vapor deposition

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