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InSb quantum-well structures for electronic device applications

Journal of crystal growth, 2009-03, Vol.311 (7), p.1972-1975

2009

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Strain effects on excitonic transitions in GaN: Deformation potentials

Physical review. B, Condensed matter, 1996-11, Vol.54 (19), p.13460-13463

1996

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Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction

Journal of crystal growth, 2002-06, Vol.241 (4), p.535-542

2002

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Pressure-dependent photoluminescence study of wurtzite GaN

Applied physics letters, 1995-06, Vol.66 (25), p.3492-3494

1995

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High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration

Journal of applied physics, 1999-03, Vol.85 (5), p.3006-3008

1999

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Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

Applied physics letters, 1999-10, Vol.75 (15), p.2280-2282

1999

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Atomic-scale structure and electronic properties of GaN/GaAs superlattices

Applied physics letters, 1996-12, Vol.69 (24), p.3698-3700

1996

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Intrinsic exciton transitions in GaN

Journal of applied physics, 1998-01, Vol.83 (1), p.455-461

1998

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Schottky-based band lineups for refractory semiconductors

Applied physics letters, 1995-04, Vol.66 (15), p.1974-1976

1995

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LPE growth of crack-free PbSe layers on Si(100) using MBE-grown PbSe/BaF2/CaF2 buffer layers

Journal of electronic materials, 1997-05, Vol.26 (5), p.444-448

1997

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Evidence of segregation in (100) strained Si1-xGex alloys grown at low temperature by molecular beam epitaxy

Applied physics letters, 1990-01, Vol.56 (4), p.367-369

1990

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Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAs

Journal of electronic materials, 1997-11, Vol.26 (11), p.1342-1348

1997

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Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface

Applied physics letters, 1995-05, Vol.66 (21), p.2861-2863

1995

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Growth of superconducting V3Si on Si by molecular beam epitaxial techniques

Applied physics letters, 1988-08, Vol.53 (6), p.514-516

1988

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Dependence of critical thickness on growth temperature in GexSi1-x/Si superlattices

Applied physics letters, 1988-03, Vol.52 (11), p.916-918

1988

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Schottky barrier height measurements of epitaxial NiSi2 on Si

Applied physics letters, 1985-01, Vol.47 (8), p.853-855

1985

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Photoluminescence of zinc-blende GaN under hydrostatic pressure

Applied physics letters, 1994-05, Vol.64 (22), p.2928-2930

1994

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Anion Exchange Reactions and initial Gan Epitaxial Layer Formation Under Nitrogen Plasma Exposure of a GaAs Surface

MRS proceedings, 1995, Vol.388, Article 259

1995

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Anisotropic phonon scattering in γ-irradiated LiF

Journal of applied physics, 1985-01, Vol.57 (4), p.1417-1419

1985

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Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures

Applied physics letters, 1996-03, Vol.68 (11), p.1510-1512

1996

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Growth and characterization of superconducting V3Si on Si and Al2O3 by molecular beam epitaxial techniques

Journal of electronic materials, 1989-11, Vol.18 (6), p.757-761

1989

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Schottky barrier height measurements of type-A and type-B NiSi2 epilayers on Si

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1986-05, Vol.4 (3), p.860-864

1986

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LPE growth of crack-free PbSe layers on Si(100) using MBE-Grown PbSe/BaF2CaF2 buffer layers

Journal of electronic materials, 1997-05, Vol.26 (5), p.444-448

1997

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Fundamental Properties of ZnO

Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 2011, Vol.35, p.1-28

2011

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Relaxation of coherent strain in Si1−xGex/Si superlattices and alloys

Thin solid films, 1989-12, Vol.183 (1-2), p.79-86

1989

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InSb quantum-well structures for electronic device applications

Strain effects on excitonic transitions in GaN: Deformation potentials

Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction

Pressure-dependent photoluminescence study of wurtzite GaN

High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration

Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

Atomic-scale structure and electronic properties of GaN/GaAs superlattices

Intrinsic exciton transitions in GaN

Schottky-based band lineups for refractory semiconductors

LPE growth of crack-free PbSe layers on Si(100) using MBE-grown PbSe/BaF2/CaF2 buffer layers

Evidence of segregation in (100) strained Si1-xGex alloys grown at low temperature by molecular beam epitaxy

Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAs

Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface

Growth of superconducting V3Si on Si by molecular beam epitaxial techniques

Dependence of critical thickness on growth temperature in GexSi1-x/Si superlattices

Schottky barrier height measurements of epitaxial NiSi2 on Si

Photoluminescence of zinc-blende GaN under hydrostatic pressure

Anion Exchange Reactions and initial Gan Epitaxial Layer Formation Under Nitrogen Plasma Exposure of a GaAs Surface

Anisotropic phonon scattering in γ-irradiated LiF

Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures

Growth and characterization of superconducting V3Si on Si and Al2O3 by molecular beam epitaxial techniques

Schottky barrier height measurements of type-A and type-B NiSi2 epilayers on Si

LPE growth of crack-free PbSe layers on Si(100) using MBE-Grown PbSe/BaF2CaF2 buffer layers

Fundamental Properties of ZnO

Relaxation of coherent strain in Si1−xGex/Si superlattices and alloys

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