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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Advanced materials (Weinheim), 2022-10, Vol.34 (41), p.n/a

2022

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Synergetic Effect of Aluminum Oxide and Organic Halide Salts on Two‐Dimensional Perovskite Layer Formation and Stability Enhancement of Perovskite Solar Cells

Advanced energy materials, 2023-10, Vol.13 (39)

2023

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Highly Photosensitive Lead Sulfide Thin Films Grown by H2S Free MOCVD Using a Single Source Metal‐Organic Precursor

Small (Weinheim an der Bergstrasse, Germany), 2022-10, Vol.18 (40), p.n/a

2022

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Growth of p‑Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O

Chemistry of materials, 2014-11, Vol.26 (21), p.6088-6091

2014

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Thermal atomic layer deposition of In2O3 thin films using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium and H2O

Applied surface science, 2017-10, Vol.419, p.758-763

2017

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Synergetic Effect of Aluminum Oxide and Organic Halide Salts on Two‐Dimensional Perovskite Layer Formation and Stability Enhancement of Perovskite Solar Cells (Adv. Energy Mater. 39/2023)

Advanced energy materials, 2023-10, Vol.13 (39)

2023

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Synthesis of New Heteroleptic Indium Complexes as Potential Precursors for Indium Oxide Thin Films

European journal of inorganic chemistry, 2021-07, Vol.2021 (25), p.2480-2485

2021

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Heteroleptic manganese compounds as potential precursors for manganese based thin films and nanomaterials

RSC advances, 2020-08, Vol.1 (5), p.29659-29667

2020

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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Advanced materials (Weinheim), 2023-03, Vol.35 (13), p.n/a

2023

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Synthesis of novel volatile niobium precursors containing carboxamide for Nb2O5 thin films

Polyhedron, 2021-05, Vol.200, p.115134, Article 115134

2021

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Copper Oxide Buffer Layers by Pulsed‐Chemical Vapor Deposition for Semitransparent Perovskite Solar Cells

Advanced materials interfaces, 2021-01, Vol.8 (1), p.n/a

2021

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Synthesis and Structure of Tin and Germanium Complexes as Precursors Containing Alkoxyaminoalkoxide Ligands for Thin Film Transistors

European journal of inorganic chemistry, 2020-06, Vol.2020 (21), p.2074-2079

2020

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Band gap engineering of atomic layer deposited ZnxSn1‐xO buffer for efficient Cu(In,Ga)Se2 solar cell

Progress in photovoltaics, 2018-09, Vol.26 (9), p.745-751

2018

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Synthesis and characterization of novel zinc precursors for ZnO thin film deposition by atomic layer deposition

Dalton transactions : an international journal of inorganic chemistry, 2020-04, Vol.49 (14), p.436-4314

2020

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Germanium Compounds Containing GeE Double Bonds (E = S, Se, Te) as Single-Source Precursors for Germanium Chalcogenide Materials

Inorganic chemistry, 2017-04, Vol.56 (7), p.4084-4092

2017

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A facile synthetic route to tungsten diselenide using a new precursor containing a long alkyl chain cation for multifunctional electronic and optoelectronic applications

RSC advances, 2019-02, Vol.9 (11), p.6169-6176

2019

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SnO2 thin films grown by atomic layer deposition using a novel Sn precursor

Applied surface science, 2014-11, Vol.320, p.188-194

2014

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Volatile Nickel Aminoalkoxide Complexes as Liquid Precursors for Non-volatile Memory Device of NiO Films by ALD

Bulletin of the Korean Chemical Society, 2011, 32(3), , pp.783-784

2011

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Impedance spectroscopy characterization of resistance switching NiO thin films prepared through atomic layer deposition

Applied physics letters, 2006-11, Vol.89 (22), p.222105-222105-3

2006

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Novel Heteroleptic Tin(II) Complexes Capable of Forming SnO and SnO2 Thin Films Depending on Conditions Using Chemical Solution Deposition

ACS omega, 2022-01, Vol.7 (1), p.1232-1243

2022

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Synthesis and Crystal Structures of New Strontium Complexes with Aminoalkoxy and β‑Diketonato Ligands

ACS omega, 2021-06, Vol.6 (24), p.15948-15956

2021

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New Volatile Tantalum Imido Precursors with Carboxamide Ligands

ACS omega, 2021-09, Vol.6 (38), p.24795-24802

2021

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Synthesis of Novel Platinum Precursor and Its Application to Metal Organic Chemical Vapor Deposition of Platinum Thin Films

Bulletin of the Korean Chemical Society, 2008, 29(8), , pp.1491-1494

2008

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Plasma-Enhanced Atomic Layer Deposition of Ni

Japanese Journal of Applied Physics, 2010-05, Vol.49 (5), p.05FA11-05FA11-4

2010

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Atomic layer deposition of nickel oxide films using Ni ( dmamp ) 2 and water

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-07, Vol.23 (4), p.1238-1243

2005

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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Synergetic Effect of Aluminum Oxide and Organic Halide Salts on Two‐Dimensional Perovskite Layer Formation and Stability Enhancement of Perovskite Solar Cells

Highly Photosensitive Lead Sulfide Thin Films Grown by H2S Free MOCVD Using a Single Source Metal‐Organic Precursor

Growth of p‑Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O

Thermal atomic layer deposition of In2O3 thin films using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium and H2O

Synergetic Effect of Aluminum Oxide and Organic Halide Salts on Two‐Dimensional Perovskite Layer Formation and Stability Enhancement of Perovskite Solar Cells (Adv. Energy Mater. 39/2023)

Synthesis of New Heteroleptic Indium Complexes as Potential Precursors for Indium Oxide Thin Films

Heteroleptic manganese compounds as potential precursors for manganese based thin films and nanomaterials

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Synthesis of novel volatile niobium precursors containing carboxamide for Nb2O5 thin films

Copper Oxide Buffer Layers by Pulsed‐Chemical Vapor Deposition for Semitransparent Perovskite Solar Cells

Synthesis and Structure of Tin and Germanium Complexes as Precursors Containing Alkoxyaminoalkoxide Ligands for Thin Film Transistors

Band gap engineering of atomic layer deposited ZnxSn1‐xO buffer for efficient Cu(In,Ga)Se2 solar cell

Synthesis and characterization of novel zinc precursors for ZnO thin film deposition by atomic layer deposition

Germanium Compounds Containing GeE Double Bonds (E = S, Se, Te) as Single-Source Precursors for Germanium Chalcogenide Materials

A facile synthetic route to tungsten diselenide using a new precursor containing a long alkyl chain cation for multifunctional electronic and optoelectronic applications

SnO2 thin films grown by atomic layer deposition using a novel Sn precursor

Volatile Nickel Aminoalkoxide Complexes as Liquid Precursors for Non-volatile Memory Device of NiO Films by ALD

Impedance spectroscopy characterization of resistance switching NiO thin films prepared through atomic layer deposition

Novel Heteroleptic Tin(II) Complexes Capable of Forming SnO and SnO2 Thin Films Depending on Conditions Using Chemical Solution Deposition

Synthesis and Crystal Structures of New Strontium Complexes with Aminoalkoxy and β‑Diketonato Ligands

New Volatile Tantalum Imido Precursors with Carboxamide Ligands

Synthesis of Novel Platinum Precursor and Its Application to Metal Organic Chemical Vapor Deposition of Platinum Thin Films

Plasma-Enhanced Atomic Layer Deposition of Ni

Atomic layer deposition of nickel oxide films using Ni ( dmamp ) 2 and water

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