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Optically pumped VECSELs: review of technology and progress

Journal of physics. D, Applied physics, 2017-08, Vol.50 (38), p.383001

2017

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2.7 W tunable orange-red GaInNAs semiconductor disk laser

Optics express, 2007, Vol.15 (26), p.18345

2007

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Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth

Journal of crystal growth, 2019-04, Vol.511, p.33-41

2019

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High output power, single mode, and TEM 00 operation of a multiple gain chip VECSEL using a twisted-mode configuration

Optics express, 2023-04, Vol.31 (8), p.12680

2023

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Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Laser & photonics reviews, 2009-09, Vol.3 (5), p.407-434

2009

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Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1−xBix GaAs quantum wells

Nanotechnology, 2016-07, Vol.27 (32)

2016

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Perfect magnetic mirror and simple perfect absorber in the visible spectrum

Physical review. B, Condensed matter and materials physics, 2015-03, Vol.91 (11), Article 115305

2015

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Variation of lattice constant and cluster formation in GaAsBi

Journal of applied physics, 2013-12, Vol.114 (24)

2013

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High output power, single mode, and TEM00 operation of a multiple gain chip VECSEL using a twisted-mode configuration

Optics express, 2023-04, Vol.31 (8), p.12680-12685

2023

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Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers

Journal of applied physics, 2019-08, Vol.126 (8)

2019

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Quantum dot membrane external-cavity surface-emitting laser at 1.5 μm

Applied physics letters, 2021-06, Vol.118 (23)

2021

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GaSb diode lasers tunable around 2.6 μm using silicon photonics resonators or external diffractive gratings

Applied physics letters, 2020-02, Vol.116 (8)

2020

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Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off

Solar energy materials and solar cells, 2018-07, Vol.181, p.83-92

2018

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Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1−xBix epilayers

Journal of applied physics, 2015-05, Vol.117 (18)

2015

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Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility

Semiconductor science and technology, 2020-02, Vol.35 (2), p.25009

2020

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Circular polarization switching and bistability in an optically injected 1300 nm spin-vertical cavity surface emitting laser

Applied physics letters, 2015-01, Vol.106 (2)

2015

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Lithography-free oxide patterns as templates for self-catalyzed growth of highly uniform GaAs nanowires on Si(111)

Nanotechnology, 2015-07, Vol.26 (27), p.275301-275301

2015

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High power GaInNAs superluminescent diodes emitting over 400 mW in the 1.2 μm wavelength range

Applied physics letters, 2019-08, Vol.115 (8)

2019

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72-W vertical-external-cavity surface-emitting laser with 1180-nm emission for laser guide star adaptive optics

Electronics letters, 2018-09, Vol.54 (19), p.1135-1137

2018

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Raman spectroscopy of GaSb1−xBix alloys with high Bi content

Applied physics letters, 2020-05, Vol.116 (20)

2020

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InAs/InP quantum dot VECSEL emitting at 1.5 μm

Applied physics letters, 2019-10, Vol.115 (17)

2019

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Tunable Raman Soliton Source Using Mode-Locked Tm-Ho Fiber Laser

IEEE photonics technology letters, 2007-06, Vol.19 (12), p.934-936

2007

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Diode-pumped mode-locked Tm:LuAG laser at 2 μm based on GaSb-SESAM

Optics letters, 2017-02, Vol.42 (4), p.839-842

2017

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Surface photovoltage study of GalnNAs layers for photovoltaic applications

Journal of physics. Conference series, 2019-03, Vol.1186 (1), p.12003

2019

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Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures

Semiconductor science and technology, 2020-09, Vol.35 (9), p.95038

2020

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Optically pumped VECSELs: review of technology and progress

2.7 W tunable orange-red GaInNAs semiconductor disk laser

Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth

High output power, single mode, and TEM 00 operation of a multiple gain chip VECSEL using a twisted-mode configuration

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1−xBix GaAs quantum wells

Perfect magnetic mirror and simple perfect absorber in the visible spectrum

Variation of lattice constant and cluster formation in GaAsBi

High output power, single mode, and TEM00 operation of a multiple gain chip VECSEL using a twisted-mode configuration

Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers

Quantum dot membrane external-cavity surface-emitting laser at 1.5 μm

GaSb diode lasers tunable around 2.6 μm using silicon photonics resonators or external diffractive gratings

Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off

Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1−xBix epilayers

Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility

Circular polarization switching and bistability in an optically injected 1300 nm spin-vertical cavity surface emitting laser

Lithography-free oxide patterns as templates for self-catalyzed growth of highly uniform GaAs nanowires on Si(111)

High power GaInNAs superluminescent diodes emitting over 400 mW in the 1.2 μm wavelength range

72-W vertical-external-cavity surface-emitting laser with 1180-nm emission for laser guide star adaptive optics

Raman spectroscopy of GaSb1−xBix alloys with high Bi content

InAs/InP quantum dot VECSEL emitting at 1.5 μm

Tunable Raman Soliton Source Using Mode-Locked Tm-Ho Fiber Laser

Diode-pumped mode-locked Tm:LuAG laser at 2 μm based on GaSb-SESAM

Surface photovoltage study of GalnNAs layers for photovoltaic applications

Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures

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