UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2563-2569

2011

Volltextzugriff (PDF)

Neutron-Induced Multiple Bit Upsets on Two Commercial SRAMs Under Dynamic-Stress

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.893-899

2012

Volltextzugriff (PDF)

Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2966-2973

2012

Volltextzugriff (PDF)

A Statistical Approach to Microdose Induced Degradation in FinFET Devices

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3285-3292

2009

Volltextzugriff (PDF)

ESD characterization of multi-chip RGB LEDs

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1510-1513

2013

Volltextzugriff (PDF)

Characterization and Optimization of Sub-32-nm FinFET Devices for ESD Applications

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3507-3516

2008

Volltextzugriff (PDF)

Microdose and Breakdown Effects Induced by Heavy Ions on Sub 32-nm Triple-Gate SOI FETs

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3182-3188

2008

Volltextzugriff (PDF)

Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

IEEE transactions on nuclear science, 2013-06, Vol.60 (3), p.1970-1991

2013

Volltextzugriff (PDF)

Effects of Heavy-Ion Strikes on Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2257-2263

2007

Volltextzugriff (PDF)

Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2204-2209

2007

Volltextzugriff (PDF)

Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2205-2212

2009

Volltextzugriff (PDF)

Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress

Microelectronics and reliability, 2006-09, Vol.46 (9), p.1669-1672

2006

Volltextzugriff (PDF)

Referred leg pain originating from the sacroiliac joint: 6-month outcomes from the prospective randomized controlled iMIA trial

Acta neurochirurgica, 2016-11, Vol.158 (11), p.2219-2224

2016

Volltextzugriff (PDF)

Posterior Lamellar Graft Preparation: A Prospective Review from an Eye Bank on Current and Future Aspects

Journal of Ophthalmology, 2013-01, Vol.2013 (2013), p.476-482

2013

Volltextzugriff (PDF)

RNAi-based strategies for cyclooxygenase-2 inhibition in cancer

BioMed research international, 2010-01, Vol.2010, p.828045-11

2010

Volltextzugriff (PDF)

Off-State Degradation of High-Voltage-Tolerant nLDMOS-SCR ESD Devices

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2061-2071

2011

Volltextzugriff (PDF)

Proton-Induced Mobility Degradation in FinFETs With Stressor Layers and Strained SOI Substrates

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.800-807

2011

Volltextzugriff (PDF)

Neutron-Induced Soft Errors in Graphic Processing Units

2012 IEEE Radiation Effects Data Workshop, 2012, p.1-6

2012

Volltextzugriff (PDF)

Charged device model (CDM) ESD challenges for laterally diffused nMOS (nLDMOS) silicon controlled rectifier (SCR) devices for high-voltage applications in standard low-voltage CMOS technology

2010 International Electron Devices Meeting, 2010, p.35.5.1-35.5.4

2010

Volltextzugriff (PDF)

Unexpected failure during HBM ESD stress in nanometer-scale nLDMOS-SCR devices

2011 International Electron Devices Meeting, 2011, p.6.4.1-6.4.4

2011

Volltextzugriff (PDF)

Impact of Radiation on the Operation and Reliability of Deep Submicron CMOS Technologies

ECS transactions, 2010, Vol.27 (1), p.39-46

2010

Volltextzugriff (PDF)

Total ionizing dose effects on ultra thin buried oxide floating body memories

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.MY.3.1-MY.3.5

2012

Volltextzugriff (PDF)

Radiation hardness aspects of advanced FinFET and UTBOX devices

2012 IEEE International SOI Conference (SOI), 2012, p.1-2

2012

Volltextzugriff (PDF)

HBM parameter extraction and Transient Safe Operating Area

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010, 2010, p.1-8

2010

Volltextzugriff (PDF)

SCCF - System to component level correlation factor

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010, 2010, p.1-10

2010

Volltextzugriff (PDF)

1 – 25 von 205

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(163)
Mit Volltextzugriff
(171)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(146)
Life Sciences & Biomedicine
(100)
Humans
(64)
Technology
(37)
Engineering
(34)
Physical Sciences
(32)
Engineering, Electrical & Electronic
(29)
Biochemistry & Molecular Biology
(21)
Chemistry
(19)
Electrostatic Discharge
(18)
Animals
(17)
Cell Biology
(17)
Female
(17)
Orthopedics
(17)
Finfets
(16)
Neurosciences & Neurology
(16)
Surgery
(16)
Clinical Neurology
(15)
Logic Gates
(15)
Male
(14)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(2)
... seit 90 Tagen
(5)

Menü

Weitere Dienste

Einstellungen

Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs

Neutron-Induced Multiple Bit Upsets on Two Commercial SRAMs Under Dynamic-Stress

Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs

A Statistical Approach to Microdose Induced Degradation in FinFET Devices

ESD characterization of multi-chip RGB LEDs

Characterization and Optimization of Sub-32-nm FinFET Devices for ESD Applications

Microdose and Breakdown Effects Induced by Heavy Ions on Sub 32-nm Triple-Gate SOI FETs

Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

Effects of Heavy-Ion Strikes on Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques

Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide

Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays

Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress

Referred leg pain originating from the sacroiliac joint: 6-month outcomes from the prospective randomized controlled iMIA trial

Posterior Lamellar Graft Preparation: A Prospective Review from an Eye Bank on Current and Future Aspects

RNAi-based strategies for cyclooxygenase-2 inhibition in cancer

Off-State Degradation of High-Voltage-Tolerant nLDMOS-SCR ESD Devices

Proton-Induced Mobility Degradation in FinFETs With Stressor Layers and Strained SOI Substrates

Neutron-Induced Soft Errors in Graphic Processing Units

Charged device model (CDM) ESD challenges for laterally diffused nMOS (nLDMOS) silicon controlled rectifier (SCR) devices for high-voltage applications in standard low-voltage CMOS technology

Unexpected failure during HBM ESD stress in nanometer-scale nLDMOS-SCR devices

Impact of Radiation on the Operation and Reliability of Deep Submicron CMOS Technologies

Total ionizing dose effects on ultra thin buried oxide floating body memories

Radiation hardness aspects of advanced FinFET and UTBOX devices

HBM parameter extraction and Transient Safe Operating Area

SCCF - System to component level correlation factor

Suchergebnisse filtern