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A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar Modules
IEEE journal of solid-state circuits, 2008-09, Vol.43 (9), p.1889-1896
2008
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Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power Amplifiers
IEEE transactions on electron devices, 2009-07, Vol.56 (7), p.1529-1532
2009
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On Common-Base Avalanche Instabilities in SiGe HBTs
IEEE transactions on electron devices, 2008-06, Vol.55 (6), p.1276-1285
2008
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The Effects of Scaling and Bias Configuration on Operating-Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits
IEEE transactions on electron devices, 2007-07, Vol.54 (7), p.1605-1616
2007
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The effects of proton irradiation on the operating voltage constraints of SiGe HBTs
IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2403-2407
2005
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Common-base intermodulation characteristics of advanced SiGe HBTs
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008, p.244-247
2008
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Large-Signal Performance, Linearity, and Reliability Characteristics of Aggressively-Biased Cascode SiGe HBTs for Power Amplifier Applications
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2007, p.135-138
2007
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Modeling mixed-mode DC and RF stress in SiGe HBT power amplifiers
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008, p.133-136
2008
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Comparing RF linearity of npn and pnp SiGe HBTs
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009, p.29-32
2009
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Analysis of Factors Contributing to Common-Base Avalanche Instabilities in Advanced SiGe HBTs
2006 Bipolar/BiCMOS Circuits and Technology Meeting, 2006, p.1-4
2006
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Reliability issues associated with operating voltage constraints in advanced SiGe HBTs
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.409-414
2005
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Substrate bias effects in vertical SiGe HBTs fabricated on CMOS-compatible thin film SOI
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005, 2005, p.256-259
2005
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Reliability of SiGe HBTs for Power Amplifiers-Part I: Large-Signal RF Performance and Operating Limits
IEEE transactions on device and materials reliability, 2009-09, Vol.9 (3), p.431-439
2009
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Reliability of SiGe HBTs for Power Amplifiers-Part II: Underlying Physics and Damage Modeling
IEEE transactions on device and materials reliability, 2009-09, Vol.9 (3), p.440-448
2009
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An Investigation of the Large-Signal RF Safe-Operating-Area on Aggressively-Biased Cascode SiGe HBTs for Power Amplifier Applications
2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2009, p.1-4
2009
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A High-Linearity, X-Band, SiGe Low-Noise Amplifier for Improved Dynamic Range in Next-Generation Radar and Wireless Systems
2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2009, p.1-4
2009
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